公开(公告)号：DE69115169T2

公开(公告)日：1996-07-11

申请号：DE69115169

申请日：1991-08-22

Applicant: SONY CORP

Inventor： FUJII YOSHIAKI ,  SAKURAI MICHIHIKO ,  ITO YUJIRO

IPC: G02B6/42 ,  G02B27/10 ,  G02B27/14 ,  G02B27/28 ,  H01S5/00

Abstract: In a wave combining device, for improving the combining efficiency, a pair of dichroic mirrors (16a, 16b) is employed and three or four laser beams (11a to 14a) which are osciallating in a same direction, are introduced into said mirrors such that for P waves one of the dichroic mirrors (16a) and for S-waves the other dichroic mirror (16b) are used selectively in accordance with the oscillation directions of said laser beams to be combined. The two beams leading the dichroic mirrors (16a, 16b) are PS combined by a polarizing beam splitter prism (15) into a single beam to be coupled, for example, to an optical fiber (18).

公开(公告)号：DE69115169D1

公开(公告)日：1996-01-18

申请号：DE69115169

申请日：1991-08-22

Applicant: SONY CORP

Inventor： FUJII YOSHIAKI ,  SAKURAI MICHIHIKO ,  ITO YUJIRO

IPC: G02B6/42 ,  G02B27/10 ,  G02B27/14 ,  G02B27/28 ,  H01S5/00

Abstract: In a wave combining device, for improving the combining efficiency, a pair of dichroic mirrors (16a, 16b) is employed and three or four laser beams (11a to 14a) which are osciallating in a same direction, are introduced into said mirrors such that for P waves one of the dichroic mirrors (16a) and for S-waves the other dichroic mirror (16b) are used selectively in accordance with the oscillation directions of said laser beams to be combined. The two beams leading the dichroic mirrors (16a, 16b) are PS combined by a polarizing beam splitter prism (15) into a single beam to be coupled, for example, to an optical fiber (18).

公开(公告)号：JPH04110916A

公开(公告)日：1992-04-13

申请号：JP23135590

申请日：1990-08-31

Applicant: SONY CORP

Inventor： FUJII YOSHIAKI ,  SAKURAI MICHIHIKO ,  ITO YUJIRO

IPC: G02B6/42 ,  G02B27/10 ,  G02B27/14 ,  G02B27/28 ,  H01S5/00

Abstract: PURPOSE:To improve the total coupling efficiency by performing multiplexing which utilizes the wavelength division of a dichroic mirror first and then making laser light in a uniform vibration direction incident on a polarization beam splitter PBS. CONSTITUTION:Laser light beams 1a and 2a emitted by 1st and 2nd semiconductor lasers 1 and 2 are made incident on a 1st dichroic mirror 6a and laser light beams 3a and 4a emitted by 3rd and 4th semiconductor lasers 3 and 4 are made incident on a 2nd dichroic mirror 6b. Thus, the four laser beams from the four semiconductors are converted into two light beams, which are made incident on the PBS 5 and multiplexed into one beam. Consequently, the total coupling efficiency when the laser beams are coupled with an optical fiber is improved.

公开(公告)号：JPH01137688A

公开(公告)日：1989-05-30

申请号：JP29664087

申请日：1987-11-25

Applicant: SONY CORP

Inventor： AKIYAMA TOMI ,  MATSUI SHUNSUKE ,  MITA ARIO ,  FUJII YOSHIAKI

IPC: H01L23/02 ,  H01S5/00

Abstract: PURPOSE:To align the optical axis with a high precision eliminating a need of delicate alignment by forming a reference part for alignment on a laser holding base of a laser module. CONSTITUTION:A reference step 10 for alignment formed on the surface peripheral part of a header 2 is composed of the surface 10a facing to the surface side and the peripheral surface 10b facing to outside in smaller diameter than that of the header 2. The step 10 is formed so that the central axis of the peripheral surface 10b may be aligned with the optical axis 9 of the laser beams emitted from a laser module 1 and furthermore the surface 10a may be at the specified distance from the focal point of the laser beams. Through these procedures, a module fixing hole 12 is designed so that another step 12c may be closely engaged with the step 10 while a surface 12a may be at the same distance as that of the surface 10a from the focal point of laser beams of the laser module 1.

公开(公告)号：JPS61120477A

公开(公告)日：1986-06-07

申请号：JP24173684

申请日：1984-11-16

Applicant: Sony Corp

Inventor： TOGASHI HIROSHI ,  FUJII YOSHIAKI ,  KAMATA MIKIO ,  TAKAKUWA HIDEMI ,  FUTAKI MAKOTO

IPC: H01L21/338 ,  H01L29/08 ,  H01L29/417 ,  H01L29/812

CPC classification number: H01L29/0891 ,  H01L29/812

Abstract: PURPOSE:To obtain a device with good reproducibility, by depositing a Schottky metal layer on a semi-insulating semiconductor substrate, providing a mask, which has opening parts corresponding to source and drain regions, implanting ions, thereafter removing the exposed metal layer by annealing, and making the metal layer to remain beneath the mask as an electrode. CONSTITUTION:Si ions are implanted in the surface layer part of a semi- insulating GaAs substrate 21. Thereafter, a shallow N type active layer 22 is formed by annealing. A Schottky metal layer 23 comprising WSi is deposited thereon. The layer is coated by an SiO2 layer 24. Then, opening parts 26 and 25 are provided in correspondence with source and drain regions to be formed. Si ions are implanted through the layer 23. An N type source region 27 and a drain region 28, which are deeper than the layer 22, are formed in the layer 22 by annealing. Then the unnecessary layer 24 is removed. The layer 23 at both ends, which is exposed by said removal of the layer 24, is removed. The layer 23, which is exposed only between the regions 27 and 28, is made to remain as a Schottky electrode 29.

Abstract translation: 目的：为了获得具有良好重现性的器件，通过在半绝缘半导体衬底上沉积肖特基金属层，提供具有对应于源区和漏区的开口部分的掩模，注入离子，然后通过退火除去暴露的金属层 ，并且使金属层作为电极保持在掩模下方。 构成：将Si离子注入到半绝缘GaAs衬底21的表层部分中。此后，通过退火形成浅N型有源层22。 包含WSi的肖特金属层23沉积在其上。 该层被SiO 2层24涂覆。然后，与要形成的源区和漏区相对应地设置开口部26和25。 通过层23注入Si +离子。通过退火在层22中形成比层22深的N +型源极区27和漏极区28。 然后去除不需要的层24。 去除通过所述去除层24暴露的两端的层23。 使仅暴露在区域27和28之间的层23被保持为肖特基电极29。

公开(公告)号：JPS6154678A

公开(公告)日：1986-03-18

申请号：JP17699584

申请日：1984-08-25

Applicant: Sony Corp

Inventor： TOGASHI HIROSHI ,  FUJII YOSHIAKI ,  TAKAKUWA HIDEMI ,  KATO YOJI

IPC: H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

CPC classification number: H01L29/475

Abstract: PURPOSE:To prevent an adverse effect due to the melting of a low melting-point material layer on annealing at a high temperature by forming a layer containing a high melting-point material onto the low melting-point material layer shaping Schottky barriers at high voltage to a compound semiconductor substrate. CONSTITUTION:In a GaAsMES (a metal-a semiconductor) FET as one example of a compound semiconductor device, a Schottky barrier gate electrode 8 consists of a WSi layer 7 and a W layer 6 as layers containing a high melting-point material and an Al layer 5 as a layer, the melting point thereof is lower than said material and which forms Schottky barriers at high voltge to a substrate 1. Consequently, Schottky bariers at high voltage of a substrate 1. Consequently, Schottky barriers at high voltage can be shaped to the substrate 1 while preventing an adverse effect due to melting on annealing treatment. In the layer 7 as an uppermost layer in the electrode 8, the chemical stability of the surface is improved, and not only a protective function for the surface is enhanced but also gate wiring resistance can be lowered by thickly forming thickness.

Abstract translation: 目的：通过在低熔点材料层上形成含有高熔点材料的层，在高温下退火时由于熔点低的熔点材料层而导致的不良影响，在高电压下形成肖特基势垒 涉及化合物半导体衬底。 构成：作为化合物半导体器件的一个例子的GaAsMES（金属 - 半导体）FET中，肖特基势垒栅电极8由WSi层7和W层6构成，作为含有高熔点材料的层和 Al层5作为层，其熔点低于所述材料，并且在高电压下形成肖特基势垒到衬底1.因此，肖特基在基板1的高电压下存在。因此，高电压下的肖特基势垒可以是 同时防止由退火处理引起的熔化引起的不利影响。 在作为电极8的最上层的层7中，表面的化学稳定性提高，不仅提高了表面的保护功能，而且通过厚厚的厚度也能够降低栅极布线电阻。

公开(公告)号：JPS6116577A

公开(公告)日：1986-01-24

申请号：JP13752784

申请日：1984-07-03

Applicant: Sony Corp

Inventor： FUJII YOSHIAKI ,  TOGASHI HIROSHI ,  TAKAKUWA HIDEMI ,  KATOU YOUJI

IPC: H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

CPC classification number: H01L29/475

Abstract: PURPOSE:To lower the resistance of a Schottky gate electrode while obtaining a semiconductor device having excellent Schottky characteristics and controllability of characteristics by constituting the Schottky gate electrode by a high melting-point metallic film and a high melting-point metallic silicide. CONSTITUTION:A Schottky gate electrode 5 is constituted by films such as a W film 3a and a W0.34Si0.66 film 4a. Consequently, not only the Schottky characteristics of a GaAs MESFET are improved extremely but also the inter-surface uniformity and reproducibility of Schottky characteristics are enhanced, and the resistance of the Schottky gate electrode 5 is lowered. Since the thickness of the W film 3a is reduced, adhesive properties to a GaAs substrate 1 of the W film 3a are improved, thus resulting in no peeling of the Schottky gate electrode 5 through annealing. The W0.34Si0.66 film 4a has high chemical resistance and oxidation resistance, thus resulting in no limitation to processing such as etching and a heat treatment process.

Abstract translation: 目的：通过高熔点金属膜和高熔点金属硅化物构成肖特基栅电极，同时获得具有优异的肖特基特性和特性控制性的半导体器件，降低肖特基栅电极的电阻。 构成：肖特基栅电极5由诸如W膜3a和W0.34Si0.66膜4a的膜构成。 因此，不仅GaAs MESFET的肖特基特性得到极大改善，而且肖特基特性的表面间均匀性和再现性提高，并且肖特基栅电极5的电阻降低。 由于W膜3a的厚度减小，所以对于W膜3a的GaAs基板1的粘合性提高，所以通过退火不会使肖特基型栅电极5剥离。 W344.66薄膜4a具有高耐化学腐蚀性和抗氧化性，因此不影响诸如蚀刻和热处理工艺的加工。

公开(公告)号：JPS61290775A

公开(公告)日：1986-12-20

申请号：JP13319285

申请日：1985-06-19

Applicant: SONY CORP

Inventor： FUJII YOSHIAKI ,  KATO YOJI

IPC: H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

Abstract: PURPOSE:To improve the heat resistance of a Schottky gate electrode and adhesive properties with a substrate by forming a first high melting-point metallic film onto a semiconductor substrate, shaping a high melting-point metallic silicide film onto the high melting-point metallic film and forming a second high melting-point metallic film onto the silicide film. CONSTITUTION:A W film 2, a WSi2 film 3 and a W film 4 are shaped onto an N-type GaAs substrate 1 in succession. The predetermined sections of the W film 4, the WSi2 film 3 and the W film 2 are removed successively through etching, thus forming a Schottky gate electrode 5. An SiO2 film 6 is formed onto the whole surface, and the whole is thermally treated. The prescribed section of the SiO2 film 6 is removed through etching to partially expose the surface of the N-type GaAs substrate 1, and a source electrode 7 and a drain electrode 8 consisting of Au-Ge/Ni films are shaped to the Schottky gate electrode 5 in a self-alignment manner.

公开(公告)号：JPH03200994A

公开(公告)日：1991-09-02

申请号：JP34426589

申请日：1989-12-28

Applicant: SONY CORP

Inventor： KOJIMA CHIAKI ,  FUJII YOSHIAKI ,  SAKURAI MICHIHIKO

IPC: G09B19/00 ,  G02B27/20 ,  H01S5/042

Abstract: PURPOSE:To identify individual laser pointers and to diversify functions by providing a switching means for switching from continuous light emission and blinking or (and) >= 2 different kinds of blinking within a range of naked-eye identification. CONSTITUTION:The driving circuit for a laser light emission part 3 composed of an IC1 is controlled with the detection output of a laser light emission part 3 having a light receiving element, i.e. photodiode detecting the laser light L from a laser light emission part 3 is controlled. Then, detection and control are performed so that driving is carried out with the frequency and pulse width set by a frequency switching means 5 and a pulse width switching means 6. Consequently, the light emission of individual laser points can be switched to the continuous light emission or blinking, or blinking with difference frequencies or (and) pulse width which can be identified with the naked eye. Consequently, when plural users use the laser pointer, the individual laser pointers can be identified and many functions are obtained.

公开(公告)号：JPH01317236A

公开(公告)日：1989-12-21

申请号：JP14858388

申请日：1988-06-15

Applicant: SONY CORP

Inventor： YONEYAMA OSAMU ,  FUJII YOSHIAKI ,  SAKAMOTO YASUHIRO

IPC: G11B7/125 ,  H01S5/00

Abstract: PURPOSE:To improve the reliability and to facilitate the maintenance for a semiconductor light emitting device by setting some of plural light emitting elements in the halt state and actuating other light emitting elements. CONSTITUTION:The laser diodes 1a and 1b having their optical axes orthogonal to each other are used together with the condenser lenses 2a and 2d which focus the laser beam LB, a polarizing plate 3, and an optical fiber 4. The diode 1a usually emits the light, thus the beam LB radiated from the diode 1a is condensed by the lens 2a and transmitted by the fiber 4 through the plate 3. While the diode 1b is kept under the halt state and does not emit the light. Thus it is possible to improve the reliability and the lifetime and to facilitate or eliminate the maintenance for a semiconductor light emitting device.