1.
    发明专利
    未知

    公开(公告)号:DE3217035A1

    公开(公告)日:1982-11-25

    申请号:DE3217035

    申请日:1982-05-06

    Applicant: SONY CORP

    Abstract: A cathode ray tube having a phosphor layer formed on an inner surface of a panel of an envelope, a color selecting aperture grill formed of a number of grid elements and located within the envelope opposing to the phosphor layer, a metal wire for coupling the number of the grid elements, an electron gun located within the envelope and a deflecting device located around the envelope is disclosed, in which the resonance frequency of at least one grid element of the color selecting grid is selected different from that of another grid element in the vicinity thereof.

    2.
    发明专利
    未知

    公开(公告)号:FR2505555A1

    公开(公告)日:1982-11-12

    申请号:FR8207907

    申请日:1982-05-06

    Applicant: SONY CORP

    Abstract: A cathode ray tube having a phosphor layer formed on an inner surface of a panel of an envelope, a color selecting aperture grill formed of a number of grid elements and located within the envelope opposing to the phosphor layer, a metal wire for coupling the number of the grid elements, an electron gun located within the envelope and a deflecting device located around the envelope is disclosed, in which the resonance frequency of at least one grid element of the color selecting grid is selected different from that of another grid element in the vicinity thereof.

    CATHODE RAY TUBE
    4.
    发明专利

    公开(公告)号:CA1178641A

    公开(公告)日:1984-11-27

    申请号:CA402304

    申请日:1982-05-05

    Applicant: SONY CORP

    Abstract: A cathode ray tube having a phosphor layer formed on an inner surface of a panel of an envelope, a colour selecting aperture grill formed of a number of grid elements and located within the envelope opposing to the phosphor layer, a metal wire for coupling the number of the grid elements, an electron gun located within the envelope and a deflecting device located around the envelope is disclosed, in which the resonance frequency of at least one grid element of the color selecting grid is selected different from that of another grid element in the vicinity thereof.

    Detection part of interaction between substances, substrate for bioassay equipped therewith, and supply method of aqueous solution to detection part
    7.
    发明专利
    Detection part of interaction between substances, substrate for bioassay equipped therewith, and supply method of aqueous solution to detection part 有权
    检测物质之间的相互作用的一部分,用于生物传感器的基材和检测部分的水溶液的供应方法

    公开(公告)号:JP2005114603A

    公开(公告)日:2005-04-28

    申请号:JP2003350553

    申请日:2003-10-09

    Abstract: PROBLEM TO BE SOLVED: To supply an aqueous solution to a minute reaction region that is a field for detecting the interaction between substances, and to prevent the evaporation of the aqueous solution.
    SOLUTION: The detection part of the interaction between substances is constituted so as to provide a reaction region 11 that is a field for detecting the interaction between substances and the detection part 1 for the interaction between the substances equipped with at least water absorbable gel G housed in the reaction region 11 and electrodes 12 and 13 arranged in opposed relation to the reaction region 11 to arrange the detection part 1.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:将水溶液供给到作为用于检测物质之间的相互作用的场的微小反应区域,并且防止水溶液的蒸发。 解决方案:物质之间的相互作用的检测部分构成为提供反应区域11,反应区域11是用于检测物质与检测部分1之间的相互作用的场,用于至少配备吸水性物质 凝胶G容纳在反应区域11中,电极12和13与反应区域11相对设置,以布置检测部分1.版权所有(C)2005,JPO&NCIPI

    MACHINING OF HEAT SINK FOR LASER DEVICE

    公开(公告)号:JPH01200687A

    公开(公告)日:1989-08-11

    申请号:JP2525988

    申请日:1988-02-05

    Applicant: SONY CORP

    Abstract: PURPOSE:To prevent abrasive sags from being produced as well as locate a bonding position of a laser device in a manner that it is not away from a package window of a semiconductor laser by machining a heat sink into such a configuration that a pair of protrusions are formed on the exit surface of a laser light beam so as to extend from the edge on the device bonding surface side of the heat sink to an edge opposite to the former, and then abrading the device bonding surface. CONSTITUTION:A heat sink 1 includes a pair of protrusions 6, 6 formed integrally on a surface 4 which has an edge 3 jointly with a device bonding surface 2, the protrusions extending from the edge 3 to an edge 5 located in opposition to the edge 3. The device bonding surface 2 of the heat sink 1 is abraded. Thereupon, although edges which are possessed jointly by the upper surfaces of the protrusions 6, 6 and the device bonding surface 2 suffer from abrasive sags, the edge 3 enjoys no such abrasive sags. Thereafter, the upper surfaces of the protrusions 6, 6 are abraded. Hereby, a distance 1 between a position 7 where a laser device is bonded and the uppermost portion of the heat sink 1 can be shortened.

    MANUFACTURE OF SEMICONDUCTOR DEVICE

    公开(公告)号:JPS63239966A

    公开(公告)日:1988-10-05

    申请号:JP7316187

    申请日:1987-03-27

    Applicant: SONY CORP

    Abstract: PURPOSE:To manufacture a semiconductor device, which requires a protective film having a specified thickness at a specified position, efficiently with few steps, by forming the protective film by a printing method. CONSTITUTION:When a semiconductor device having a protective film 12 is manufactured, the protective film 12 is formed by a printing method. For example, an element required for constituting a DRAM in each part 14, which is divided as a chip of a semiconductor wafer 13, is formed. Thereafter, on said semiconductor wafer 13, an SiO2 layer 9 forming an insulating layer, an Al wiring layer 10 and an SiN layer forming a first surface protective film are sequentially formed. A bonding pad 4 and a window 11A for providing a contact are formed in the SiN layer 11. Then a recess part 19 in an original plate 17 for intaglio printing is filled with a polyimide resin 18. The plate 17 is pushed on the SiN layer 11, and the polyimide layer 12 is printed and formed on the entire surface of the SiN layer other than the part of the window 11A of the SiN layer 11. The polyimide layer 12 is hardened by heat treatment.

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