公开(公告)号：EP0995344A1

公开(公告)日：2000-04-26

申请号：EP98932280.5

申请日：1998-07-08

Applicant: Surface Technology Systems Limited

Inventor： LEA, Leslie Michael ,  BHARDWAJ, Jyoti, Kiron ,  GUIBARRA, Edward

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/321 ,  H01J37/32504 ,  H01J37/32862 ,  H01J2237/0266 ,  H05H1/46

Abstract: A slotted conducting cylinder (11) surrounds a reactor chamber body (10) and is in turn surrounded by an antenna (12). The cylinder (11) can be grounded during normal operation of the plasma processing apparatus, but when RF driven it serves to enhance capacitive coupling with the plasma causing the inner surface (16) of the body (10) to become charged and hence the plasma will sputter clean the inner surface (16).

公开(公告)号：EP1055250A1

公开(公告)日：2000-11-29

申请号：EP99958406.3

申请日：1999-12-10

Applicant: Surface Technology Systems Limited

Inventor： BHARDWAJ, Jyoti, Kiron ,  LEA, Leslie Michael

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/3266 ,  H01J2237/3348 ,  H01L21/30655

Abstract: A chamber (2) has a side wall (8), the upper region of which is formed as a dielectric window (9). An antenna (10) is located outside of the dielectric window (9) and is used to couple RF power inductively into the plasma of an etchant or deposition gas which is formed inside the apparatus. A series of parallel tubes (11) are mounted in a plane parallel to the surface of a platen (6) carrying a wafer (7). Each tube contains a small permanent magnet or series of magnets. Electrons from the plasma created near the antenna (10) move into the region of influence of the magnetic field, are guided by the magnetic field and then lost, for example to the wall (8). The net result is a reduction in plasma density, on transmitting the magnetic field, from the region in which the plasma is produced to the region in which the wafer is placed. The magnetic field has no effect on the radicals, and the magnet carrying tubes have only a marginal effect on the radical numbers. Use of this magnetic attenuator allows high RF powers to be applied to the plasma source, producing the high numbers of radicals needed for a high etch rate, but limits the number of ions which can reach the wafer so that the physical component is homogeneous and well controlled.

公开(公告)号：EP1088329A1

公开(公告)日：2001-04-04

申请号：EP00919057.0

申请日：2000-04-12

Applicant: Surface Technology Systems Limited

Inventor： BHARDWAJ, Jyoti Kiron ,  LEA, Leslie Michael ,  GUIBARRA, Edward

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01L21/30655

Abstract: A workpiece is processed in a chamber by striking a plasma in the chamber, treating the workpiece by cyclically adjusting the processing parameters between at least a first step having a first set of processing parameters and a second step having a second set of process parameters, wherein the plasma is stabilised during the transition between the first and second steps. These steps may comprise cyclic etch and deposition steps. One possibility for stabilising the plasma is by matching the impedance of the plasma to the impedance of the power supply which provides energy to the plasma, by means of a matching unit which can be controlled in a variety of ways depending upon the step type or time during the step. Another possibility is to prevent or reduce substantially variation in the pressure in the chamber between the first and second steps.

公开(公告)号：EP0983605A1

公开(公告)日：2000-03-08

申请号：EP97919178.0

申请日：1997-09-22

Applicant: Surface Technology Systems Limited

Inventor： BHARDWAJ, Jyoti, Kiron ,  LEA, Leslie Michael

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32935 ,  H01J37/3299

Abstract: This invention relates to plasma processing apparatus and methods. Apparatus (10) includes a chamber (11), a wafer support (12), antennae (14 and 15), a control module (20) for controlling the antennae (14, 15) and responsive to associated detectors (19a), which are located in or adjacent the wafer.