公开(公告)号：JP3967433B2

公开(公告)日：2007-08-29

申请号：JP26469497

申请日：1997-09-29

Applicant: サーフェイス テクノロジー システムズ ピーエルシーSurface Technology Systems Limited

Inventor： キロン バルドワジ ジョッティ ,  ミカエル リー レスリー

IPC: H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01Q7/00

CPC classification number: H01J37/321 ,  H05H1/46

公开(公告)号：WO1991015032A1

公开(公告)日：1991-10-03

申请号：PCT/GB1991000221

申请日：1991-02-14

Applicant: SURFACE TECHNOLOGY SYSTEMS LIMITED ,  BRANCHER, Carl, David, Monnington

Inventor： SURFACE TECHNOLOGY SYSTEMS LIMITED

IPC: H01L21/68

CPC classification number: H01L21/67754 ,  H01L21/68742 ,  H01L21/68771 ,  Y10S414/137 ,  Y10S414/14

Abstract: A processing apparatus (10) has chambers (11 and 12) and a loading mechanism (13) for transferring workpieces into and out of the chambers. The workpieces are carried on a pallet (16) which is slotted so that, when it is inserted into the chambers (11 or 12) the slots are aligned with lines A-H on lifting pins. This arrangement enables the mechanism (13) to withdraw the pallet, whilst the pins (22) are in their erect position.

Abstract translation: 处理装置（10）具有用于将工件输入和流出室的室（11和12）和装载机构（13）。 工件承载在开槽的托盘（16）上，使得当其被插入室（11或12）中时，槽在提升销上与线A-H对准。 这种布置使得机构（13）能够在销（22）处于其直立位置的同时退出托盘。

公开(公告)号：WO1998013856A1

公开(公告)日：1998-04-02

申请号：PCT/GB1997002543

申请日：1997-09-22

Applicant: SURFACE TECHNOLOGY SYSTEMS LIMITED ,  BHARDWAJ, Jyoti, Kiron ,  LEA, Leslie, Michael

Inventor： SURFACE TECHNOLOGY SYSTEMS LIMITED

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32935 ,  H01J37/3299

Abstract: This invention relates to plasma processing apparatus and methods. Apparatus (10) includes a chamber (11), a wafer support (12), antennae (14 and 15), a control module (20) for controlling the antennae (14, 15) and responsive to associated detectors (19a), which are located in or adjacent the wafer.

Abstract translation: 本发明涉及等离子体处理装置和方法。 装置（10）包括腔室（11），晶片支架（12），天线（14和15），控制模块（20），用于控制天线（14,15）并响应于相关联的检测器（19a） 位于晶片或其附近。

公开(公告)号：WO1998005605A1

公开(公告)日：1998-02-12

申请号：PCT/GB1997001941

申请日：1997-07-17

Applicant: SURFACE TECHNOLOGY SYSTEMS LIMITED ,  BHARDWAJ, Jyoti, Kiron

Inventor： SURFACE TECHNOLOGY SYSTEMS LIMITED

IPC: C04B41/91

CPC classification number: C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2111/00422 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/6005 ,  G11B21/21 ,  C04B35/117

Abstract: This invention relates to etch depth control in sintered workpieces. A batch (16) of heads (10) is mounted on a carrier tray (17) and includes a control head (18), which is made of a single material which etches at a rate which is proportional to or is identical to the etch rate of the sintered materials of the head (10). The depth of etch in the control is monitored by a reflectance interferometer (19).

Abstract translation: 本发明涉及烧结工件中的蚀刻深度控制。 头（10）的一批（16）安装在载体托盘（17）上，并包括一个控制头（18），该控制头由单一材料制成，其以与蚀刻成比例或相同的速率蚀刻 头部（10）的烧结材料的速率。 控制中的蚀刻深度由反射干涉仪（19）监测。

公开(公告)号：EP0995344A1

公开(公告)日：2000-04-26

申请号：EP98932280.5

申请日：1998-07-08

Applicant: Surface Technology Systems Limited

Inventor： LEA, Leslie Michael ,  BHARDWAJ, Jyoti, Kiron ,  GUIBARRA, Edward

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/321 ,  H01J37/32504 ,  H01J37/32862 ,  H01J2237/0266 ,  H05H1/46

Abstract: A slotted conducting cylinder (11) surrounds a reactor chamber body (10) and is in turn surrounded by an antenna (12). The cylinder (11) can be grounded during normal operation of the plasma processing apparatus, but when RF driven it serves to enhance capacitive coupling with the plasma causing the inner surface (16) of the body (10) to become charged and hence the plasma will sputter clean the inner surface (16).

公开(公告)号：EP0878824A2

公开(公告)日：1998-11-18

申请号：EP98303196.4

申请日：1998-04-24

Applicant: Surface Technology Systems Limited

Inventor： McQuarrie, Andrew Duncan ,  Boman, Lee Campbell

IPC: H01J37/32

CPC classification number: H01J37/3244

Abstract: An XeF 2 source 12 comprises a XeF 2 source chamber 16, which includes a tray or ampoule 17 for XeF 2 crystals 17a, a reservoir 18 via valve 19, a flow controller 13 fed by the reservoir 18 and a valve 20 between the reservoir 18 and the controller 13. Pressure sources 21 and 22 are provided respectively to maintain the reservoir 18 and the source chamber 16 at the sublimination pressure of XeF 2 . The arrangement allows for a steady supply of XeF 2 to an etching chamber.

Abstract translation: XeF2源12包括XeF2源室16，其包括用于XeF2晶体17a的托盘或安瓿17，通过阀19的储存器18，由储存器18供给的流量控制器13和在储存器18和控制器之间的阀20 分别设置压力源21和22，以将储存器18和源室16保持在XeF2的升华压力。 该装置允许将XeF2稳定地供应到蚀刻室。

公开(公告)号：EP0838839A3

公开(公告)日：1998-05-13

申请号：EP97307538.5

申请日：1997-09-25

Applicant: Surface Technology Systems Limited

Inventor： Bhardwaj, Jyoti Kiron ,  Lea, Leslie Michael

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/321 ,  H05H1/46

Abstract: A wafer processing chamber 11 includes a wafer support 12, a dielectric window 13 and coaxial coils 15 and 16 located outside the dielectric window 13 for inducing a plasma within the chamber. A variety of coil/dielectric windows are described together with protocols for their control.

Abstract translation: 晶片处理室11包括晶片支撑件12，电介质窗口13和位于电介质窗口13外部的同轴线圈15和16，用于在腔室内引发等离子体。 描述了各种线圈/电介质窗口及其控制协议。

公开(公告)号：EP0838839A2

公开(公告)日：1998-04-29

申请号：EP97307538.5

申请日：1997-09-25

Applicant: Surface Technology Systems Limited

Inventor： Bhardwaj, Jyoti Kiron ,  Lea, Leslie Michael

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/321 ,  H05H1/46

Abstract: A wafer processing chamber 11 includes a wafer support 12, a dielectric window 13 and coaxial coils 15 and 16 located outside the dielectric window 13 for inducing a plasma within the chamber. A variety of coil/dielectric windows are described together with protocols for their control.

Abstract translation: 晶片处理室11包括晶片支撑件12，电介质窗13和位于电介质窗13外部的同轴线圈15和14，用于在室内诱导等离子体。 描述各种线圈/电介质窗口以及用于其控制的协议。

公开(公告)号：EP1090421A1

公开(公告)日：2001-04-11

申请号：EP99926612.5

申请日：1999-06-15

Applicant: Surface Technology Systems Limited

Inventor： THOMAS, Tudor Norman ,  WILLIAMS, Robert John

IPC: H01L21/68

CPC classification number: H01L21/6833

Abstract: There is provided a method of dechucking from an electrostatic chuck a substrate held by one or more residual forces to the chuck, the method comprising the steps of: (a) reducing a residual chucking force due to the electrostatic chuck polarisation; (b) contracting the chuck with the substrate attached thereto with a plasma for a time sufficient substantially to remove any residual charge from the surface of the substrate and the chuck; and (c) subsequently to, or simultaneously with, step (b) removing the substrate from the chuck. Also disclosed is an apparatus for performing the method.

公开(公告)号：EP0995219A1

公开(公告)日：2000-04-26

申请号：EP98932275.5

申请日：1998-07-06

Applicant: Surface Technology Systems Limited

Inventor： LEA, Leslie, Michael ,  GUIBARRA, Edward

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/321

Abstract: Plasma processing apparatus frequently incorporates an antenna fed from a power supply and in this invention a power supply feeds a conventional matching circuit (10), which in turn is connected to the primary (11) of a transformer (12). The antenna (15) is coupled across the secondary winding (13) of the transformer (12) and that winding is tapped to ground at (16). This creates a virtual earth (17) near the mid point of the antenna (15) significantly reducing the variation, along the length of the antenna, in the power supplied to the plasma.

Abstract translation: 等离子体处理设备通常包含从电源馈送的天线，并且在本发明中，电源供给传统的匹配电路（10），该匹配电路又连接到变压器（12）的主电路（11）。 天线（15）耦合在变压器（12）的次级绕组（13）的两端，该绕组在（16）处接地。 这在天线（15）的中点附近产生虚拟地球（17），这显着地减少了沿等离子体供电的天线长度的变化。