Abstract:
The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.
Abstract:
A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt% and an average particle diameter of 0.005 µm to 1.0 µm. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.
Abstract:
The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 µm to 1.0 µm and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. This metal paste preferably contains an additive such as a surfactant in accordance with the application method. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300°C to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.
Abstract:
The present invention relates to a through electrode to be mounted on a substrate having a through hole. The through electrode includes: a penetrating part that passes through the through hole; a convex bump part that is formed on at least one end of the penetrating part and is wider than the through electrode; and a metal film that has at least one layer and is formed on a surface of the convex bump part that comes in contact with the substrate. The through electrode part and the convex bump part are formed of a sintered body prepared by sintering one or more kind of metal powder selected from gold, silver, palladium, and platinum having a purity of 99.9 wt% or more and an average particle size of 0.005 µm to 1.0 µm, and the metal film contains gold, silver, palladium, or platinum having a purity of 99.9 wt% or more. The through electrode according to present invention is useful for a circuit board having a multilayer structure, makes it possible to reduce the trace length of an element, such as MEMS, and is also adaptable to hermetic sealing.
Title translation:LUFTDICHTES VERPACKUNGSELEMENT,HERSTELLUNGSVERFAHRENDAFÜRUND HERSTELLUNGSVERFAHRENFÜREINE LUFTDICHTE VERPACKUNG UNTER VERWENDUNG DES LUFTDICHTEN VERPACKUNGSELEMENTS
Abstract:
A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass% or more and an average particle diameter of 0.1 to 0.5 µm, the organic solvent has a boiling point of 200 to 350°C, and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23°C by means of a rotational viscometer is 6.0 or more.
Abstract:
Un electrodo pasante para ser montado en un sustrato que tiene un orificio pasante, que comprende: una parte penetrante que pasa a través del agujero pasante; una parte protuberante convexa formada en al menos un extremo de la parte penetrante y más ancha que la parte penetrante; y una película metálica que tiene al menos una capa y formada en una superficie de la parte protuberante convexa que entra en contacto con el sustrato, en la que la parte penetrante y la parte protuberante convexa están formadas por un cuerpo sinterizado preparado por sinterización de uno o más tipos de polvo metálico seleccionado de oro, plata, paladio y platino con una pureza de 99,9 % en peso o más y un tamaño de partícula promedio de 0,005 μm a 1,0 μm, y la película metálica contiene oro, plata, paladio o platino con una pureza de 99,9 % en peso o más.