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1.发明授权Use of metal native oxide to control stress gradient and bending moment of a released MEMS structure 有权使用金属天然氧化物来控制释放的MEMS结构的应力梯度和弯矩公开(公告)号：US09446947B2
公开(公告)日：2016-09-20
申请号：US14467521
申请日：2014-08-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
IPC: B81C1/00
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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公开(公告)号：US20200207609A1
公开(公告)日：2020-07-02
申请号：US16294399
申请日：2019-03-06
Applicant: Texas Instruments Incorporated
Inventor： Earl Vedere Atnip , John Wesley Hamlin , Win Jae Jessie Yuan
Abstract: Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.
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公开(公告)号：US20170174510A1
公开(公告)日：2017-06-22
申请号：US15007626
申请日：2016-01-27
Applicant: Texas Instruments Incorporated
Inventor： Earl Vedere Atnip , Sean Christopher O'Brien
CPC classification number: B81C1/00849 , B81C1/00484 , B81C2203/0735 , G02B26/0833
Abstract: A method of fabricating a MEMS device. A first spacer is formed above a CMOS substrate containing circuitry. Vias are formed within the first spacer. A first metal is formed above the first spacer and vias and patterned to form a MEMS element. A second spacer is formed above the MEMS element and first spacer. A via is formed within the second spacer. A second metal is formed above the second spacer and the via. A capping layer is formed above the second metal. The second metal is patterned to form a second MEMS element. The device is cleaned using a developer solution while the capping layer protects the second MEMS element. The first and second spacers are removed to release the first and second MEMS elements.
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Patent Agency Ranking
公开(公告)号：US11511989B2
公开(公告)日：2022-11-29
申请号：US16294399
申请日：2019-03-06
Applicant: Texas Instruments Incorporated
Inventor： Earl Vedere Atnip , John Wesley Hamlin , Win Jae Jessie Yuan
Abstract: Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.
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5.发明申请USE OF METAL NATIVE OXIDE TO CONTROL STRESS GRADIENT AND BENDING MOMENT OF A RELEASED MEMS STRUCTURE 有权使用金属氧化物来控制应力梯度和微型结构的弯曲变形公开(公告)号：US20160052778A1
公开(公告)日：2016-02-25
申请号：US14467521
申请日：2014-08-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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公开(公告)号：US20170176740A1
公开(公告)日：2017-06-22
申请号：US15003082
申请日：2016-01-21
Applicant: Texas Instruments Incorporated
Inventor： Lance William Barron , Jose Antonio Martinez , Earl Vedere Atnip
CPC classification number: G02B26/0833 , C23C16/34 , C23C16/405 , C23C16/50 , C23C28/321 , C23C28/345 , G02B1/115
Abstract: A microelectromechanical system (MEMS) is comprised of a micromirror attached to a semiconductor device. A stack of inorganic high index materials comprised of titanium oxide, titanium nitride, and titanium is deposited above metal levels within the semiconductor device. Another stack of inorganic high index materials comprised of titanium oxide, titanium nitride, and titanium may be deposited in a continuous or dis-continuous layer within one or more of the dielectric layers. Each stack of high index material films is deposited at a depth and of thickness to achieve a minimum reflectance for the entire film system and to ensure maximum destructive interference at the targeted wavelength range. The high index material stack results in reduced light scattering during operation of the micromirror and improves contrast of the display system.
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7.发明授权公开(公告)号：US09656860B2
公开(公告)日：2017-05-23
申请号：US15254828
申请日：2016-09-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
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8.发明申请USE OF METAL NATIVE OXIDE TO CONTROL STRESS GRADIENT AND BENDING MOMENT OF A RELEASED MEMS STRUCTURE 审中-公开使用金属氧化物来控制应力梯度和微型结构的弯曲变形公开(公告)号：US20160368765A1
公开(公告)日：2016-12-22
申请号：US15254828
申请日：2016-09-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 在所描述的示例中，通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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