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Patent Agency Ranking
1.发明申请USE OF METAL NATIVE OXIDE TO CONTROL STRESS GRADIENT AND BENDING MOMENT OF A RELEASED MEMS STRUCTURE 有权使用金属氧化物来控制应力梯度和微型结构的弯曲变形公开(公告)号：US20160052778A1
公开(公告)日：2016-02-25
申请号：US14467521
申请日：2014-08-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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2.发明授权公开(公告)号：US09656860B2
公开(公告)日：2017-05-23
申请号：US15254828
申请日：2016-09-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
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3.发明申请USE OF METAL NATIVE OXIDE TO CONTROL STRESS GRADIENT AND BENDING MOMENT OF A RELEASED MEMS STRUCTURE 审中-公开使用金属氧化物来控制应力梯度和微型结构的弯曲变形公开(公告)号：US20160368765A1
公开(公告)日：2016-12-22
申请号：US15254828
申请日：2016-09-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 在所描述的示例中，通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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公开(公告)号：US20230273423A1
公开(公告)日：2023-08-31
申请号：US17681151
申请日：2022-02-25
Applicant: Texas Instruments Incorporated
Inventor： Toby Linder , John Hamlin , Kelly J. Taylor
CPC classification number: G02B26/0833 , B81B3/0072 , B81C1/00666 , B81B2201/042
Abstract: Systems and methods for MEMS devices are disclosed. A microelectromechanical system (MEMS) device includes a substrate, and a MEMS structure supported by the substrate. The MEMS structure includes a first layer of a first material comprising a titanium aluminum alloy. The MEMS structure furth includes an aluminum layer on the first layer.
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5.发明授权Use of metal native oxide to control stress gradient and bending moment of a released MEMS structure 有权使用金属天然氧化物来控制释放的MEMS结构的应力梯度和弯矩公开(公告)号：US09446947B2
公开(公告)日：2016-09-20
申请号：US14467521
申请日：2014-08-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
IPC: B81C1/00
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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