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    SUBSTRATE AND PRODUCTION METHOD THEREFOR
    1.
    发明专利
    SUBSTRATE AND PRODUCTION METHOD THEREFOR 未知

    公开(公告)号：CA2398613A1

    公开(公告)日：2002-06-06

    申请号：CA2398613

    申请日：2001-11-28

    Applicant: TOKUYAMA CORP

    Inventor： MINABE YUICHIRO ,  KAMIYAMA YOSHIHIDE ,  YAMAMOTO REO

    IPC: C04B35/581 ,  H01L23/15 ,  H01L23/498 ,  H05K3/46 ,  H01L23/12 ,  H01L23/14

    Abstract: An aluminum nitride substrate having a via hole (3) and an inner conductive layer (2), wherein an aluminum nitride sintered body has a high thermal conductivity, has a high bonding strength to the layer (2) and the via hole (3), and are excellent in other properties. The substrate comprises a conductor layer (2) formed thereinside, and an aluminum nitride sintered bod y formed with at least one conductive via hole (3) between the inner conductiv e layer (2) and one surface of the substrate, characterized in that the alumin um nitride sintered body has a thermal conductivity at 25~C of at least 190 W/m K and a bonding strength to the inner conductive layer (2) of at least 5.0 kg/mm2.

    SUBSTRATE AND PRODUCTION METHOD THEREFOR
    6.
    发明专利
    SUBSTRATE AND PRODUCTION METHOD THEREFOR 未知

    公开(公告)号：CA2398613C

    公开(公告)日：2006-09-12

    申请号：CA2398613

    申请日：2001-11-28

    Applicant: TOKUYAMA CORP

    Inventor： YAMAMOTO REO ,  MINABE YUICHIRO ,  KAMIYAMA YOSHIHIDE

    IPC: H05K3/46 ,  C04B35/581 ,  H01L23/12 ,  H01L23/14 ,  H01L23/15 ,  H01L23/498 ,  H01L23/535

    Abstract: An aluminum nitride substrate having a via hole (3) and an inner conductive layer (2), wherein an aluminum nitride sintered body has a high thermal conductivity, has a high bonding strength t o the layer (2) and the via hole (3), and are excellent in other properties. The substrate comprises a conductor layer (2) formed thereinside, and an aluminum nitride sintered body formed with at least one conductive via hole (3) between the inner conductive layer (2) and one surface of the substrate, characterized in that the aluminum nitride sintered body has a thermal conductivity at 25.degree.C of at least 190 W/mK and a bonding strength to the inner conductive layer (2) of at least 5.0 kg/mm2.

    SUBSTRATE AND METHOD FOR PRODUCING THE SAME
    8.
    发明公开
    SUBSTRATE AND METHOD FOR PRODUCING THE SAME 有权
    SUBSTRAT UND VERFAHREN ZU SEINER HERSTELLUNG

    公开(公告)号：EP1435658A4

    公开(公告)日：2006-10-25

    申请号：EP02779905

    申请日：2002-10-07

    Applicant: TOKUYAMA CORP

    Inventor： YAMAMOTO REO ,  KAMIYAMA YOSHIHIDE

    IPC: H01L23/13 ,  H01L23/15 ,  H01L23/36 ,  H01L23/498 ,  H01S5/022 ,  H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K3/00 ,  H05K3/06 ,  H05K3/14 ,  H05K3/24 ,  H05K3/40 ,  H01L23/12

    CPC classification number: H01L23/49811 ,  H01L23/15 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K1/0206 ,  H05K1/0306 ,  H05K1/114 ,  H05K3/0008 ,  H05K3/0082 ,  H05K3/064 ,  H05K3/246 ,  H05K3/4061 ,  H05K2201/0317 ,  H05K2201/0347 ,  H05K2201/10674 ,  H05K2203/167 ,  Y10T29/49156 ,  Y10T29/49165 ,  H01L2924/00

    Abstract: It is an object to provide a method of efficiently manufacturing a double-sided circuit board having a metallic via hole which can suitably be used as a submount for mounting a semiconductor device, that is, a substrate in which the electrical contact of a metallic via hole and a circuit pattern is excellent and an element can easily be bonded and positioned. In a ceramic substrate having a via hole filled with a conductive material, a ceramic portion of at least one of faces of the ceramic substrate has a surface roughness of Ra ≤ 0.8 mu m, a substrate in which the conductive material filled in the via hole present on at least one of the faces is protruded from a surface of the face with a height of 0.3 to 5.0 mu m is used as a material substrate and a conductive layer is formed on the surface, and subsequently, the conductive layer is patterned and a solder film pattern for element mounting is formed based on a position of a convex portion of the conductive layer which results from the via hole present on an underlaid portion of the conductive layer.

    Abstract translation: 一种双面电路基板，具有金属通路孔并适合用作安装半导体元件的基板，以及一种有效地制造基板的方法，该基板确保金属通路孔与电路图案之间的良好电接触并便于定位元件 结合。 具有内部填充有导电材料的通孔的陶瓷基板在陶瓷基板的至少一侧上的陶瓷部分处具有Ra≤0.8μm的表面粗糙度。 填充至少一侧上存在的通孔的导电材料从表面突出0.3-5.0μm的衬底被用作材料衬底，并且在其表面上形成导电层之后，导电层被图案化或者 基于由存在于导电层下方的通孔产生的导电层的突出部分的位置形成用于安装元件的焊料膜。

    PRODUCTION OF METALLIZED ALUMINUM NITRIDE SUBSTRATE
    10.
    发明专利
    PRODUCTION OF METALLIZED ALUMINUM NITRIDE SUBSTRATE 失效

    公开(公告)号：JPH11246289A

    公开(公告)日：1999-09-14

    申请号：JP4917798

    申请日：1998-03-02

    Applicant: TOKUYAMA CORP

    Inventor： KAMIYAMA YOSHIHIDE ,  MITSUNABE YUICHIRO

    IPC: B23K1/19 ,  B23K35/22 ,  C04B41/88 ,  H05K1/03 ,  H05K3/00

    Abstract: PROBLEM TO BE SOLVED: To form a metallized pattern in good accuracy with excellent joint strength even after a high temp. treatment such as brazing and soldering by applying a mixture of a brazing material and an active metal on the surface of an aluminum nitride substrate, laminating a metal sheet thereon, heating it and then, removing the brazing material and the metal sheet. SOLUTION: A brazing material having Torr vacuum or nonoxidizing atmosphere having

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