Manufacturing method of shadow mask
    7.
    发明专利
    Manufacturing method of shadow mask 审中-公开
    阴影掩模的制造方法

    公开(公告)号:JP2006100161A

    公开(公告)日:2006-04-13

    申请号:JP2004286223

    申请日:2004-09-30

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a shadow mask in which fluctuation in resist pattern dimensions after development treatment is suppressed by making uniform the sensitivity in width direction of a resist film formed on both sides of a metal substrate, in the resist coating process for forming the resist film by coating a photoresist on both sides of the long metal substrate and drying in a drying chamber. SOLUTION: When the resist film coated on both sides of a metal substrate is dried in the drying chamber composed of hot air and a far-infrared heater, a shield plate is provided between the far-infrared heater and the metal substrate in the drying chamber and sensitivity in width direction of the resist film is made uniform, and by applying pattern exposure, development, etching, and resist pattern stripping treatment, a shadow mask is obtained. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 解决的问题为了提供一种荫罩的制造方法,其中通过使形成在金属基板的两侧上的抗蚀剂膜的宽度方向上的灵敏度均匀化,可以抑制显影处理后的抗蚀剂图案尺寸的波动, 在通过在长金属基板的两面上涂布光致抗蚀剂并在干燥室中干燥来形成抗蚀剂膜的抗蚀剂涂布工艺中。 解决方案:当在由热空气和远红外线加热器组成的干燥室中干燥涂覆在金属基板两侧的抗蚀剂膜时,在远红外加热器和金属基板之间设置屏蔽板 使干燥室和抗蚀剂膜的宽度方向的灵敏度均匀,通过图案曝光,显影,蚀刻和抗蚀剂图案剥离处理,得到荫罩。 版权所有(C)2006,JPO&NCIPI

    Manufacturing method of shadow mask
    8.
    发明专利
    Manufacturing method of shadow mask 审中-公开
    阴影掩模的制造方法

    公开(公告)号:JP2002373576A

    公开(公告)日:2002-12-26

    申请号:JP2001178654

    申请日:2001-06-13

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a shadow mask wherein variations do not occur in the size of a photo-resist film opening part by making an exposure light entering into the mask for pattern exposure uniform.
    SOLUTION: In the manufacturing method of the shadow mask having at least a process to form the photo-resist film on a metal sheet, a process to perform pattern exposure via the mask for pattern exposure nearly adhered to the photo-resist film, a process to develop the photo-resist film, a process to perform etching on the thin metal sheet, and a process to peel off the photo- resist film, the exposure device for the shadow mask used for the pattern exposure is provided with a rectangular light source and a box-state reflecting plate having a face arranged by the rectangular light source as a ceiling face and having a face opposing to the ceiling face as an opening face, and a reflecting film is arranged at the two inner faces of the reflecting plate in nearly parallel with the rectangular light source.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题:提供一种荫罩的制造方法,其中通过使曝光光进入用于图案曝光的均匀的曝光光而不会在光致抗蚀剂膜开口部的尺寸上发生变化。 解决方案:在至少具有在金属片上形成光刻胶膜的工艺的荫罩的制造方法中,通过几乎附着于光致抗蚀剂膜的图形曝光用掩膜进行图案曝光的工序, 为了显影光致抗蚀剂膜,在薄金属片上进行蚀刻的工艺以及剥离光致抗蚀剂膜的工艺,用于图案曝光的荫罩的曝光装置设置有矩形光源 以及盒状反射板,其具有由矩形光源作为顶面布置的面,并且具有与顶面相对的面作为开口面,反射膜配置在反射板的两个内表面 几乎与矩形光源平行。

    Multi-chip composite lead frame and semiconductor device
    9.
    发明专利
    Multi-chip composite lead frame and semiconductor device 有权
    多芯片复合引线框架和半导体器件

    公开(公告)号:JP2013058530A

    公开(公告)日:2013-03-28

    申请号:JP2011194742

    申请日:2011-09-07

    Abstract: PROBLEM TO BE SOLVED: To provide a new composite lead frame structure for a multi-chip intended to eliminate advanced processing required in advance when bonding leads of two types of support substrates, a metallic substrate and an organic material substrate, and a variety of inconvenience, in a composite lead frame structure having semiconductor chips mounted above and below the central portion of the lead frame.SOLUTION: A multi-chip composite lead frame 1 for mounting mutually different semiconductor chips above and below the central portion of the lead frame at least includes: an inner lead frame group 11 disposed toward the one semiconductor chip to deal with at least one semiconductor chip; an inner lead frame group 12 disposed toward another semiconductor chip to deal with the other semiconductor chip; and a semiconductor chip island composed of an insulative resin sheet 14 fixed to and supported by the end portion of any one of the inner lead frame groups.

    Abstract translation: 要解决的问题:为了提供一种用于多芯片的新型复合引线框架结构,其旨在消除两种类型的支撑基板,金属基板和有机材料基板的接合引线时预先需要的高级处理,以及 在具有安装在引线框架的中心部分的上方和下方的半导体芯片的复合引线框结构中的各种不便。 解决方案:一种用于在引线框架的中心部分之上和之下安装相互不同的半导体芯片的多芯片复合引线框架1至少包括:朝向一个半导体芯片设置的内部引线框架组11,以至少处理 一个半导体芯片; 内引线框组12,朝向另一半导体芯片设置以处理另一半导体芯片; 以及由固定在内引线框架组中的任一个的端部并由其支撑的绝缘树脂片14构成的半导体芯片岛。 版权所有(C)2013,JPO&INPIT

    Lead frame and method for manufacturing the same
    10.
    发明专利
    Lead frame and method for manufacturing the same 有权
    引导框架及其制造方法

    公开(公告)号:JP2011238869A

    公开(公告)日:2011-11-24

    申请号:JP2010110908

    申请日:2010-05-13

    CPC classification number: H01L2224/48091 H01L2924/00014

    Abstract: PROBLEM TO BE SOLVED: To provide a high-density lead frame with a configuration that can reduce the length of a metal wire used for wire bonding and prevent a bonding error.SOLUTION: The lead frame includes: an island; and a plurality of inner leads extending radially from a periphery of the island. A pitch of the inner leads is equal to or smaller than 130 μm, the width of a tip of each of the inner leads is larger at a bonding surface than at a rear face of the bonding surface, and each of the inner leads is fixed by using a tape from the rear face of the bonding surface so that the tape is positioned just under a bonding position.

    Abstract translation: 要解决的问题:提供具有能够减少用于引线接合的金属线的长度的结构的高密度引线框架,并防止接合误差。

    解决方案:引线框架包括:岛; 以及从岛的周边径向延伸的多个内引线。 内部引线的间距等于或小于130μm,每个内部引线的尖端的宽度在接合表面处比接合表面的后表面处的宽度大,并且每个内部引线是固定的 通过使用从接合表面的后表面的带,使得带位于刚好在接合位置下方。 版权所有(C)2012,JPO&INPIT

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