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公开(公告)号:JP2006019114A
公开(公告)日:2006-01-19
申请号:JP2004195274
申请日:2004-07-01
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: TANAKA SHOJI , SHUKUHARA MITSUO , SOGA TOMOAKI , IHARA SHINYA , NAKAMURA HIROYUKI , ISHIZAKA MASARU
IPC: H01J9/14
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a shadow mask which cuts the shadow mask in a wafer-like shape without using a cutting machine constituted of a stationary blade and a moving blade when the shadow mask of which the many sides are attached to a lengthy belt-shaped metal sheet is cut into the wafer-like shape.
SOLUTION: The metal sheet is cut by irradiating a laser beam while moving a laser beam source 30 installed above the metal sheet 1 in the width direction Y of the metal sheet. The metal sheet is cut in the lengthy belt-shaped direction of the metal sheet while the transfer of the laser beam source is made in the lengthy belt-shaped direction X of the metal sheet. The laser beam source should be YAG or CO
2 laser.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题:提供一种荫罩的制造方法,该荫罩在不使用由固定刀片和动叶片构成的切割机的情况下切割为荫罩状的荫罩, 侧面附着在长条状的带状金属片上,被切成晶片状。 解决方案:通过在金属片的宽度方向Y上移动安装在金属片1上方的激光源30移动激光束来切割金属片。 在金属片的长度方向的带状方向上切割金属片,同时在金属片的长度方向X上形成激光束源的传送。 激光束源应为YAG或CO
2 SB>激光。 版权所有(C)2006,JPO&NCIPI -
公开(公告)号:JP2006139299A
公开(公告)日:2006-06-01
申请号:JP2005371809
申请日:2005-12-26
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: KITAMURA TOMOHITO , MASUTOMI OSAMU , TANAKA SHOJI
IPC: G02B5/20 , G02F1/1335
Abstract: PROBLEM TO BE SOLVED: To provide a color filter capable of easily obtaining a surface-smooth overcoat layer even in the case of forming the over coat layer by a heretofore known coating means such as a spin coating method or a roll coating method. SOLUTION: In the color filter 1 obtained by successively forming a plurality of color pixel patterns 3 with color materials on a transparent substrate, a frame like dummy pattern 4 surrounding the color pixel pattern area is formed of the color material for one color pixel pattern 3 at the same time as the formation of one color pixel pattern 3 in the color pixel patterns 3. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题:即使在通过迄今为止已知的涂布方法如旋涂法或辊涂法形成覆盖层的情况下,也能够容易地获得表面光滑的外涂层的滤色器 。 解决方案:在通过在透明基板上连续地形成具有彩色材料的多个彩色像素图案3而获得的滤色器1中,围绕着彩色像素图案区域的框状虚设图案4由一种颜色的颜色材料形成 像素图案3与彩色像素图案3中的一个彩色像素图案3的形成同时。(C)2006,JPO&NCIPI
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公开(公告)号:JP2006106791A
公开(公告)日:2006-04-20
申请号:JP2005371810
申请日:2005-12-26
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: KITAMURA TOMOHITO , MASUTOMI OSAMU , TANAKA SHOJI
IPC: G02B5/20 , G02F1/1335
Abstract: PROBLEM TO BE SOLVED: To provide a color filter by which an overcoat layer with a smooth surface can be easily obtained even when the overcoat layer is formed by a well-known application means such as a spin coat method and a roll coat method. SOLUTION: In the color filter which is constituted by successively forming color pixel patterns of more than one colors with coloring materials on a transparent substrate, when the color pixel pattern of one color among the color pixel patterns is formed, a picture frame-shaped dummy pattern surrounding a color pixel pattern region is simultaneously formed with the coloring material of the color pixel pattern of one color. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题:提供一种滤色器,通过该滤色器可以容易地获得具有光滑表面的外涂层,即使当外涂层通过公知的涂布方法形成时,例如旋涂法和辊涂层 方法。 解决方案:在通过在透明基板上连续地形成具有着色材料的多种颜色的彩色像素图案构成的滤色器中,当形成彩色像素图案中的一种颜色的彩色像素图案时, 与彩色像素图案区域的彩色像素图案的着色材料同时形成彩色像形图案区域周围的虚拟图案。 版权所有(C)2006,JPO&NCIPI
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公开(公告)号:JP2003277862A
公开(公告)日:2003-10-02
申请号:JP2002087796
申请日:2002-03-27
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: TANAKA SHOJI , KAWAKAMI SADAO
Abstract: PROBLEM TO BE SOLVED: To provide a guide material which can be used for both apparatuses of an etching apparatus and a peeling apparatuses in common.
SOLUTION: The guide material consists of an alloy material mainly made up of Mo (molybdenum), Cr (chromium), Fe (iron), W (tungsten) and Co (cobalt), and having sufficient resistance to each treatment solution in the etching stage and peeling stage. The guide material has a chemical component of Mo of 12.5 to 14.5%, Cr of 20.0 to 22.5%, Fe of 2.0 to 6.0%, W of 2.5 to 3.5%, Co of ≤2.5%, microcomponents consisting of C, Si, Mn, V, P and S of ≤1%, and the balance Ni.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题:提供可以用于蚀刻装置的两个装置和共同的剥离装置的引导材料。 解决方案:导向材料由主要由Mo(钼),Cr(铬),Fe(铁),W(钨)和Co(钴)组成的合金材料组成,并且对每种处理液具有足够的阻力 在蚀刻阶段和剥离阶段。 引导材料的Mo的化学成分为12.5〜14.5%,Cr为20.0〜22.5%,Fe为2.0〜6.0%,W为2.5〜3.5%,Co为≤2.5%,微量元素为C,Si,Mn ,V,P和S为≤1%,余量为Ni。 版权所有(C)2004,JPO
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公开(公告)号:JP2003068191A
公开(公告)日:2003-03-07
申请号:JP2001257686
申请日:2001-08-28
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: TANAKA SHOJI , TAKADA KAZUHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of shadow mask never causing a diameter failure of pore by forming an etching corrosion-resisting resin layer without leaving bubbles in a pore in the formation of the etching corrosion- resisting resin layer on the pore side in the manufacturing method of a shadow mask by photeteching.
SOLUTION: The metal surface within the pore is subjected to a surface treatment with plasma to form a micro rough surface 40, and an etching corrosion-resisting resin is applied to form the etching corrosion-resisting resin layer 47. Otherwise, the metal surface within the pore is subjected to a surface treatment by electrolysis to form the micro rough surface 40, and the etching corrosion-resisting resin is applied to form the etching corrosion-resisting resin layer 47.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题:提供一种荫罩的制造方法,其不会在孔侧形成蚀刻耐腐蚀性树脂层而在孔中形成不产生气泡的腐蚀耐腐蚀性树脂层,从而不引起孔的直径破坏 在荫罩的制造方法中。 解决方案:用等离子体对孔内的金属表面进行表面处理,形成微小的粗糙面40,并施加蚀刻耐腐蚀性树脂以形成耐腐蚀性树脂层47.否则,金属表面内 通过电解对孔进行表面处理以形成微粗糙表面40,并且施加蚀刻耐腐蚀树脂以形成耐腐蚀性树脂层47。
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公开(公告)号:JP2002373576A
公开(公告)日:2002-12-26
申请号:JP2001178654
申请日:2001-06-13
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: KASHIWA MASASHI , HARA YUICHIRO , TANAKA SHOJI , FUJITO DAISEI , IMOTO YOSHIHIKO
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a shadow mask wherein variations do not occur in the size of a photo-resist film opening part by making an exposure light entering into the mask for pattern exposure uniform.
SOLUTION: In the manufacturing method of the shadow mask having at least a process to form the photo-resist film on a metal sheet, a process to perform pattern exposure via the mask for pattern exposure nearly adhered to the photo-resist film, a process to develop the photo-resist film, a process to perform etching on the thin metal sheet, and a process to peel off the photo- resist film, the exposure device for the shadow mask used for the pattern exposure is provided with a rectangular light source and a box-state reflecting plate having a face arranged by the rectangular light source as a ceiling face and having a face opposing to the ceiling face as an opening face, and a reflecting film is arranged at the two inner faces of the reflecting plate in nearly parallel with the rectangular light source.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题:提供一种荫罩的制造方法,其中通过使曝光光进入用于图案曝光的均匀的曝光光而不会在光致抗蚀剂膜开口部的尺寸上发生变化。 解决方案:在至少具有在金属片上形成光刻胶膜的工艺的荫罩的制造方法中,通过几乎附着于光致抗蚀剂膜的图形曝光用掩膜进行图案曝光的工序, 为了显影光致抗蚀剂膜,在薄金属片上进行蚀刻的工艺以及剥离光致抗蚀剂膜的工艺,用于图案曝光的荫罩的曝光装置设置有矩形光源 以及盒状反射板,其具有由矩形光源作为顶面布置的面,并且具有与顶面相对的面作为开口面,反射膜配置在反射板的两个内表面 几乎与矩形光源平行。
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公开(公告)号:JP2004030947A
公开(公告)日:2004-01-29
申请号:JP2002181088
申请日:2002-06-21
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: TANAKA SHOJI
IPC: H01J9/14
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method of a shadow mask intermediate for determining at a speed and accuracy the quality of the shadow mask intermediate in forming them by cutting in sheets multiple-patterned shadow masks on a long-strip metal base material at a given interval.
SOLUTION: A long-strip metal base material 11 formed with multiple-patterned shadow masks is sent into a sheet cutter 60 to be cut in a given size. By a plurality of sensors 50 arranged both in a conveying direction and in right angles, a distance of a sheet-shaped shadow mask intermediate 100a multiple-patterned in a width direction from a cut end to a plucked-off slit 21 is measured to determine the quality of the cutting. The measurement of the distance is performed by the plurality of the sensors at the same time, and the quality of the cutting is determined by comparison with a preset value. If a measurement value of even one of the plurality of sensors 50 is out of the preset value, a cutting defect is determined.
COPYRIGHT: (C)2004,JPO-
公开(公告)号:JP2003036783A
公开(公告)日:2003-02-07
申请号:JP2001222714
申请日:2001-07-24
Applicant: Toppan Printing Co Ltd , 凸版印刷株式会社
Inventor: TANAKA SHOJI , KAWAKAMI SADAO , SHOYAMA HIROAKI
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a shadow mask by a photo- etching method, in which an etching-resistance resin layer is formed with no residual air bubbles in small holes when forming it in the small holes, resulting in no defective aperture of small holes.
SOLUTION: After a thin film 40 of etching-resistant resin is formed on the metal surface in a small hole by evaporating the etching-resistant resin, the etching-resistant resin is applied to form an etching-resistant resin layer 47. Before forming the thin film of etching-resistant resin, a small-hole side resist film 2a on the metal thin plate is peeled off.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题:提供一种通过光蚀刻方法制造荫罩的方法,其中在小洞形成时,在小孔中形成不具有残留气泡的耐蚀刻树脂层,导致没有 有缺陷孔的小孔。 解决方案:通过蒸发耐腐蚀树脂,在小孔中的金属表面上形成耐腐蚀树脂薄膜40之后,施加耐腐蚀树脂以形成耐蚀刻树脂层47.在形成 耐蚀刻树脂薄膜,金属薄板上的小孔侧抗蚀剂膜2a被剥离。
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公开(公告)号:JPH104046A
公开(公告)日:1998-01-06
申请号:JP15378696
申请日:1996-06-14
Applicant: TOPPAN PRINTING CO LTD
Inventor: FURUYA AKIHIKO , TANAKA SHOJI , KITAMURA TOMOHITO , MATSUO TADASHI
IPC: G03F1/22 , H01L21/027 , G03F1/16
Abstract: PROBLEM TO BE SOLVED: To enable a mask pattern to be less deformed in position by continuous irradiation with X-rays by a method wherein anti-reflecting films of the same area are provided in the front and rear of the X-ray transmitting support film at the same position respectively. SOLUTION: An X-ray transmitting support film 12 of SiN is formed on the surface of an Si substrate 17. A back-etching protection film 13 of SiN is formed on the rear of the Si substrate 17. Then, the back-etching protection film 13 is removed except its periphery, and the Si substrate 17 is dissolved through a wet etching means from behind, whereby a support 11 provided with an opening at its center is formed. An anti-reflecting film 14 is formed on the X-ray transmitting support film 12 from above, furthermore an anti-reflecting film 15 of the same material with the film 14 is formed on the rear of the X-ray transmitting support film 12 and the back-etching protection film 13. Moreover, an X-ray absorbing thin film laminated on the surface of the anti- reflecting film 14 is patterned by etching into an X-ray absorbing thin film pattern 16 which serves as an X-ray exposure mask.
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公开(公告)号:JPH09330872A
公开(公告)日:1997-12-22
申请号:JP15210596
申请日:1996-06-13
Applicant: TOPPAN PRINTING CO LTD
Inventor: FURUYA AKIHIKO , TANAKA SHOJI , KITAMURA TOMOHITO , MATSUO TADASHI
IPC: G03F1/22 , H01L21/027 , G03F1/16
Abstract: PROBLEM TO BE SOLVED: To remarkably reduce stress change by a method wherein a reflection preventing film is formed by a high temperature ion assist evaporation method by setting a substrate temperature to be a specific range. SOLUTION: A substrate 28 is set in a chamber 22, and a specific inner pressure is set in the chamber 22, and an ion gun 23 and an electronic gun 25 are activated. Next, an opening and closing shutter 26 on the electronic gun 25 is released to release an evaporation source 24 to the inside of the chamber 22, and also in synchronism with it, the opening and closing shutter 26 of the ion gun 23 is released. Thereby, mixed gas of argon gas, etc., and oxygen gas acts on evaporation source 24 gas to ionize, and this ionized evaporation source 24 is formed on a substrate 28 face. At this time, a temperature of the substrate 28 has beforehand set to be a high temperature of about 160 deg.C to 450 deg.C. Thereby, it is possible to obtain a reflection preventing film in which stress change due to an X-ray radiation amount is decreased and a reduction in impaired electron density does not occur.
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