公开(公告)号：JP2006019114A

公开(公告)日：2006-01-19

申请号：JP2004195274

申请日：2004-07-01

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： TANAKA SHOJI ,  SHUKUHARA MITSUO ,  SOGA TOMOAKI ,  IHARA SHINYA ,  NAKAMURA HIROYUKI ,  ISHIZAKA MASARU

IPC: H01J9/14

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a shadow mask which cuts the shadow mask in a wafer-like shape without using a cutting machine constituted of a stationary blade and a moving blade when the shadow mask of which the many sides are attached to a lengthy belt-shaped metal sheet is cut into the wafer-like shape.
SOLUTION: The metal sheet is cut by irradiating a laser beam while moving a laser beam source 30 installed above the metal sheet 1 in the width direction Y of the metal sheet. The metal sheet is cut in the lengthy belt-shaped direction of the metal sheet while the transfer of the laser beam source is made in the lengthy belt-shaped direction X of the metal sheet. The laser beam source should be YAG or CO
2 laser.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种荫罩的制造方法，该荫罩在不使用由固定刀片和动叶片构成的切割机的情况下切割为荫罩状的荫罩， 侧面附着在长条状的带状金属片上，被切成晶片状。 解决方案：通过在金属片的宽度方向Y上移动安装在金属片1上方的激光源30移动激光束来切割金属片。 在金属片的长度方向的带状方向上切割金属片，同时在金属片的长度方向X上形成激光束源的传送。 激光束源应为YAG或CO 2 激光。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JPH104046A

公开(公告)日：1998-01-06

申请号：JP15378696

申请日：1996-06-14

Applicant: TOPPAN PRINTING CO LTD

Inventor： FURUYA AKIHIKO ,  TANAKA SHOJI ,  KITAMURA TOMOHITO ,  MATSUO TADASHI

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To enable a mask pattern to be less deformed in position by continuous irradiation with X-rays by a method wherein anti-reflecting films of the same area are provided in the front and rear of the X-ray transmitting support film at the same position respectively. SOLUTION: An X-ray transmitting support film 12 of SiN is formed on the surface of an Si substrate 17. A back-etching protection film 13 of SiN is formed on the rear of the Si substrate 17. Then, the back-etching protection film 13 is removed except its periphery, and the Si substrate 17 is dissolved through a wet etching means from behind, whereby a support 11 provided with an opening at its center is formed. An anti-reflecting film 14 is formed on the X-ray transmitting support film 12 from above, furthermore an anti-reflecting film 15 of the same material with the film 14 is formed on the rear of the X-ray transmitting support film 12 and the back-etching protection film 13. Moreover, an X-ray absorbing thin film laminated on the surface of the anti- reflecting film 14 is patterned by etching into an X-ray absorbing thin film pattern 16 which serves as an X-ray exposure mask.

公开(公告)号：JPH09330872A

公开(公告)日：1997-12-22

申请号：JP15210596

申请日：1996-06-13

Applicant: TOPPAN PRINTING CO LTD

Inventor： FURUYA AKIHIKO ,  TANAKA SHOJI ,  KITAMURA TOMOHITO ,  MATSUO TADASHI

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To remarkably reduce stress change by a method wherein a reflection preventing film is formed by a high temperature ion assist evaporation method by setting a substrate temperature to be a specific range. SOLUTION: A substrate 28 is set in a chamber 22, and a specific inner pressure is set in the chamber 22, and an ion gun 23 and an electronic gun 25 are activated. Next, an opening and closing shutter 26 on the electronic gun 25 is released to release an evaporation source 24 to the inside of the chamber 22, and also in synchronism with it, the opening and closing shutter 26 of the ion gun 23 is released. Thereby, mixed gas of argon gas, etc., and oxygen gas acts on evaporation source 24 gas to ionize, and this ionized evaporation source 24 is formed on a substrate 28 face. At this time, a temperature of the substrate 28 has beforehand set to be a high temperature of about 160 deg.C to 450 deg.C. Thereby, it is possible to obtain a reflection preventing film in which stress change due to an X-ray radiation amount is decreased and a reduction in impaired electron density does not occur.

公开(公告)号：JPH0917712A

公开(公告)日：1997-01-17

申请号：JP16189495

申请日：1995-06-28

Applicant: TOPPAN PRINTING CO LTD

Inventor： TANAKA SHOJI ,  MATSUO TADASHI ,  FUKUHARA NOBUHIKO

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PURPOSE: To make an X-ray transmission support film in a specific film thickness and in the same height over the peripheral part and to prevent pattern distortion and defect by polishing the surface of the X-ray transmission support film formed to a specific film thickness on a silicon wafer substrate by an LPCVD method by a buff polishing method with a specific polishing pressure. CONSTITUTION: Silicon nitride film 2 is formed at least 1.1-1.5 times thicker than a specific film on both front and reverse sides of a silicon waver substrate 1. Then, the surface of the silicon nitride film 2 formed on the substrate 1 is subjected to buff polishing with a polishing pressure of 0.1-0.4kgf/cm , thus polishing the thick-film silicon nitride film 2 at a peripheral region (b) so that it is level with a center region (a). The polishing operation is performed by rotating, as an example, a pressure means or a stage, for example, at a speed of 60-80rpm with the center of one surface of the substrate or an axis which is vertical to a position which is displaced from the center as a rotary axis.

公开(公告)号：JPH08330221A

公开(公告)日：1996-12-13

申请号：JP22153995

申请日：1995-08-30

Applicant: TOPPAN PRINTING CO LTD

Inventor： MATSUO TADASHI ,  TANAKA SHOJI

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PURPOSE: To improve the alignment accuracy between a mask and a body to be exposed in the case of X-ray exposure by forming a reflection prevention film consisting of two-layer film at a side where the alignment light of an X-ray transmission thin film is discharged and a reflection prevention film of a single layer at a side where the alignment light enters. CONSTITUTION: Silicon nitride film is formed as X-ray transmission film 2 on the entire surface of silicon substrate 1, silicon dioxide film and aluminum oxide film are formed as reflection prevention films 3 and 4 consisting of a two-layer film, and X-ray absorption thin film is formed on the uppermost layer successively, the X-ray absorption thin film is subjected to patterning and X-ray absorption pattern 6' is formed, the silicon substrate 1 is subjected to back etching for forming a support frame body 1', and silicon dioxide film is formed as a rflection prevention film 5 with a single layer as an X-ray mask. The X-ray mask is a reflection prevention film consisting of a two-layer film as a film for preventing reflection against alignment light, thus playing a role as an etching stopper when performing the patterning of the X-ray absorption thin film.

公开(公告)号：JPH07235482A

公开(公告)日：1995-09-05

申请号：JP4787694

申请日：1994-02-22

Applicant: TOPPAN PRINTING CO LTD

Inventor： MATSUO TADASHI ,  FUKUHARA NOBUHIKO ,  NOGUCHI FUMINOBU ,  TANAKA SHOJI

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PURPOSE:To provide a method for producing a mask for X-ray aligner having high positional accuracy and planarity and in which the positional displacement of pattern due to production process is suppressed. CONSTITUTION:The method for producing a mask for X-ray aligner employs at least an X-ray absorptive pattern, an X-ray transmissive thin film for holding the X-ray absorptive pattern, and a supporting frame for securing the X-ray transmissive thin film on the outer periphery thereof. In order to form an X-ray absorptive pattern finally at a position separated by a distance (r) from the center of the X-ray transmissive thin film, i.e., the mask for X-ray aligner, the X-ray absorptive pattern is formed at such position as previously corrected by an amount corresponding to the displacement of the X-ray absorptive pattern caused by the inner stress of the X-ray transmissive thin film after formation of the supporting frame through etching of a supporting substrate.

公开(公告)号：JPH07130623A

公开(公告)日：1995-05-19

申请号：JP27384893

申请日：1993-11-01

Applicant: TOPPAN PRINTING CO LTD

Inventor： MATSUO TADASHI ,  NOGUCHI FUMINOBU ,  TANAKA SHOJI ,  FUKUHARA NOBUHIKO

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PURPOSE:To prevent the quality damage of an antireflection film, by a method wherein the contour of the inner wall of a frame rises vertically to a film, on the side adjacent to the film, and forms a slope on the side distant from the film. CONSTITUTION:An antireflection film 2 on the frame side is formed before an X-ray transmission film 3 is formed. The back etching of an Si substrate is divided into two stages. Between the first back etching and the second back etching, the patterning process of an absorber thin film 6 is interposed. Thereby position distortion of the absorber pattern caused by internal stress of the X-ray transmission film before and after the Si substrate is etched back at one time, and position distortion of the absorber pattern caused by the internal stress of the antireflection film before and after the antireflection film 2 on the frame side is formed as the final process are reduced, so that the pattern position precision is improved.

公开(公告)号：JPH0778740A

公开(公告)日：1995-03-20

申请号：JP22106193

申请日：1993-09-06

Applicant: TOPPAN PRINTING CO LTD

Inventor： NOGUCHI FUMINOBU ,  TANAKA SHOJI ,  KITAMURA TOMOHITO ,  MATSUO TADASHI

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PURPOSE:To form an antireflection film without inflicting damage on an X-ray absorbing thin film pattern and a membrane by a method wherein the antireflection film for preventing a multiple reflection to an X-ray transmitting support film is formed by an ion assist deposition method for performing reflecting deposition under a discharge of ions. CONSTITUTION:A masking substrate 6 for X-ray exposure is set on a jig 7 in a deposition chamber 1, the air is eliminated and a start button is operated to actuate an ion gun 3 and electron guns 4. Thereby, the mixed gas of argon gas and oxygen gas is exhausted from the gun 3 and electrons are emitted from the guns 4. SiO2, which is evaporation sources 40, is discharged in the chamber 1. This SiO2 acts on the mixed gas and a film consisting of the ionized SiO2 is formed on the surface of the substrate 6. Thereby, an antireflection film can be formed on a mask for X-ray exposure during a manufacturing process without inflicting damage on the mask, the film thickness of the antireflection film can be accurately controlled and a mask having good optical characteristics is obtained.

公开(公告)号：JPH0645233A

公开(公告)日：1994-02-18

申请号：JP6536193

申请日：1993-03-24

Applicant: TOPPAN PRINTING CO LTD

Inventor： UEYAMA KOUSUKE ,  MATSUO TADASHI ,  OKUBO KINJI ,  NOGUCHI FUMINOBU ,  TANAKA SHOJI ,  FUKUHARA NOBUHIKO

IPC: G03F1/22 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F1/16

Abstract: PURPOSE:To provide a manufacture in which a variety of materials of a thin film for membrane can be selected regardless of resistance to a back etching solution and a proper film thickness of the thin film can be obtained and further an occurrence of breakage or unnecessary strain of the thin film for membrane accompanied by the manufacture can the suggested and provide a membrane and a blank. CONSTITUTION:In a substrate in which a first layer 2, a second layer 3 and a thin film 4 are sequentially installed on a base material 1, the first layer 2 is formed as a stopping layer of a back etching to the base material 1, and the second layer 3 is formed as a stopping layer of a dry etching for removing the first layer 2, and then the second layer 3 is removed by an etching. Preferably, a third layer 10 is further formed on the thin film 4 and is removed by the etching after removing the first layer 2.

公开(公告)号：JPH0214511A

公开(公告)日：1990-01-18

申请号：JP16423688

申请日：1988-07-01

Applicant: TOPPAN PRINTING CO LTD

Inventor： NOGUCHI FUMINOBU ,  TANAKA SHOJI ,  OTAKI MASAO

IPC: G03F1/22 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent an inconvenience such as a fog or the like during a developing operation by a method wherein a metal foil layer with a desired thickness is formed at an outer periphery of a unit exposure region in order to form the unit exposure region densely. CONSTITUTION:A silicon nitride film 2 both as an X-ray transmitting thin film and as a protective film is formed on both faces of a silicon wafer 1 forming a sheet-like substrate; after that, a tungsten film as an X-ray absorbing thin film 3 is formed on one face of the sheet-like substrate. Then, one part of the silicon nitride film 2 on the rear surface of the sheet-like substrate is removed; a window 4 for back-etching use in formed; a resist is formed on the surface; the X-ray absorbing thin film 3 is patterned. Then, a transcription sheet 8 formed by successively laminating an adhesion layer 5, a gold foil 6 and an exfoliation paper 7 which have been stamped in advance to a shape prescribing a unit exposure region is piled up in a prescribed position; the exfoliation paper is stripped off; a gold foil layer is formed at an outer periphery of the unit exposure region. Then, silicon is removed from the window 4 for back-etching use; an opening part 9 is formed; a mask for X-ray exposure use is obtained. Then, the unit exposure region can be formed densely.