RESIN COMPOSITION FOR SEALING SEMICONDUCTOR AND SEMICONDUCTOR DEVICE EMPLOYING IT

    公开(公告)号:JP2000332165A

    公开(公告)日:2000-11-30

    申请号:JP13580099

    申请日:1999-05-17

    Abstract: PROBLEM TO BE SOLVED: To provide a resin composition for sealing a semiconductor useful for manufacturing a most advanced semiconductor device while ensuring reliability, and a semiconductor device having enhanced reliability. SOLUTION: The resin composition for sealing a semiconductor device contains a filler A, i.e., spherical fused silica having maximum grain size of 45 μm or less, wherein the particle size of metallic impurities contained in the resin composition has a grain size of 53 μm or less. The semiconductor device is sealed with a resin composition containing a filler A, i.e., spherical fused silica having maximum grain size of 45 μm or less, wherein the particle size of metallic impurities contained in the resin composition has grain size of 53 μm or less.

    RESIN-SEALED SEMICONDUCTOR DEVICE AND EPOXY RESIN COMPOSITION FOR SEALING THE SAME

    公开(公告)号:JP2000022049A

    公开(公告)日:2000-01-21

    申请号:JP18091698

    申请日:1998-06-26

    Abstract: PROBLEM TO BE SOLVED: To provide an epoxy resin composition which is excellent in adhesion and reliability, while enabling a resin-sealed semiconductor device to be lessened in size and improved in performance, and provide also a semiconductor device sealed up with the epoxy resin composition. SOLUTION: A semiconductor device is equipped with a semiconductor element 1, a board 2 mounted with the semiconductor element 1, and an epoxy resin composition 3 which seals up the semiconductor element 1, where the epoxy resin composition 3 is formed only on the one surface of the board 2 and contains epoxy resin, curing agent, and inorganic filler, and the physical properties of the cured epoxy resin composition are as follows; flexual modulus is 10-30 GPa at a temperature of 23 deg.C, linear expansion coefficient is 4 to 20×10-6/K in a temperature range of 23 deg.C to a glass transition temperature, the product of flexual modulus at 23 deg.C and linear expansion coefficient in a temperature range of 23 deg.C to glass transition temperature is below 3×10-4 GPa/K, and glass transition temperature is above 150 deg.C.

    EPOXY RESIN COMPOSITION AND SEMICONDUCTOR DEVICE

    公开(公告)号:JPH1017645A

    公开(公告)日:1998-01-20

    申请号:JP17462596

    申请日:1996-07-04

    Abstract: PROBLEM TO BE SOLVED: To obtain an epoxy resin compsn. having improved storability and blocking resistance and excellent fluidity in the molding step by using a curing accelerator having a specified melting point. SOLUTION: This compsn. comprises (A) an epoxy resin, (B) a curing agent, and (C) one or more curing accelerators. At least one curing accelerator has an m.p of 85 to 295 deg.C. The epoxy resin (A) is preferably one having an ICI melt viscosity at 150 deg.C of not higher than 3ps. As the curing accelerator (C), a triphenylphosphine derivative is preferably used because the excellent fluidity of the epoxy resin compsn. is obtained therewith. Among triphenylphosphine derivatives, triphenylphosphine/1,4-benzoquinone adduct (m.p. 250 deg.C) excellent in fluidity, storability and blocking resistance is particularly preferred. A curing accelerator having a melting point in this range is contained in an amount of preferably at least 40wt.% (still preferably at least 60wt.%) based on all the curing accelerators.

    EPOXY COMPOSITION FOR SEMICONDUCTOR SEALING

    公开(公告)号:JPH0637212A

    公开(公告)日:1994-02-10

    申请号:JP19039692

    申请日:1992-07-17

    Abstract: PURPOSE:To obtain improved reliability by suppressing the generation of interfa cial separation of resin and a chip in the soldering process of a semiconductor device, and to provide a semiconductor sealing epoxy resin composition having excellent moldability and outstanding reliability under high temperature environ ment such as semiconductor, having large heating power, and around a motorcar engine. CONSTITUTION:The title epoxy composition is the resin composition containing a denatured styrene block copolymer, containing epoxy resin, a hardener and a filling agent and a hydrosulfite compound as ingredient composition, and the denatured styrene block copolymer. The modified styrene block copolymer is copolymerized or graft-reacted to a styrene block copolymer using unsaturated calborylic acid or its derivative, and it contains a hydrosulfite compound of 0.01 to 10wt.%. Accordingly, the composition is excellent in moldability, soldering temperature resistance, high temperature resistance and dampproof property, and it is useful in industrial production.

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