Abstract:
Semiconductor-use tape with an adhesive comprises a laminate consisting of an insulating film layer having a linear expansion coefficient in a film width direction (TD) at 50-200[deg]C of 17-30 ppm/[deg]C and tensile modulus of elasticity of 6-12 Gpa, and at least one semi-cured adhesive layer. .
Abstract:
Semiconductor-use tape with an adhesive comprises a laminate consisting of an insulating film layer having a linear expansion coefficient in a film width direction (TD) at 50-200[deg]C of 17-30 ppm/[deg]C and tensile modulus of elasticity of 6-12 Gpa, and at least one semi-cured adhesive layer. .
Abstract:
Semiconductor-use tape with an adhesive comprises a laminate consisting of an insulating film layer having a linear expansion coefficient in a film width direction (TD) at 50-200[deg]C of 17-30 ppm/[deg]C and tensile modulus of elasticity of 6-12 Gpa, and at least one semi-cured adhesive layer. .
Abstract:
Semiconductor-use tape with an adhesive comprises a laminate consisting of an insulating film layer having a linear expansion coefficient in a film width direction (TD) at 50-200[deg]C of 17-30 ppm/[deg]C and tensile modulus of elasticity of 6-12 Gpa, and at least one semi-cured adhesive layer. .
Abstract:
The present invention relates to an adhesive-backed tape for semiconductors which is characterized in that it is composed of a laminate of an insulating film layer having the following characteristics (1) and (2) and at least one adhesive agent layer in the semi-cured state. (1) The coefficient of linear expansion in the film transverse direction (TD) at 50-200° C. is 17-30 ppm/° C. (2) The tensile modulus of elasticity is 6-12 GPa By means of this construction the present invention can provide, on an industrial basis, an adhesive-backed tape suitable for producing semiconductor devices, together with copper-clad laminates, semiconductor connecting substrates and semiconductor devices employing said tape, and it enables, the reliability of semiconductor devices for high density mounting to be enhanced.
Abstract:
PROBLEM TO BE SOLVED: To prepare a new laminated film having an excellent adhesive strength and to provide a semiconductor device using the laminated film. SOLUTION: The adhesive composition for the semiconductor device comprises a thermoplastic resin and a phenol resin represented by formula (1) (wherein, Xs denote each a s denote each H or CH2 OH or an alkyl group or phenyl group and may be each the same or different; R s denote each H or a
Abstract:
PROBLEM TO BE SOLVED: To provide a resin composition for sealing a semiconductor useful for manufacturing a most advanced semiconductor device while ensuring reliability, and a semiconductor device having enhanced reliability. SOLUTION: The resin composition for sealing a semiconductor device contains a filler A, i.e., spherical fused silica having maximum grain size of 45 μm or less, wherein the particle size of metallic impurities contained in the resin composition has a grain size of 53 μm or less. The semiconductor device is sealed with a resin composition containing a filler A, i.e., spherical fused silica having maximum grain size of 45 μm or less, wherein the particle size of metallic impurities contained in the resin composition has grain size of 53 μm or less.
Abstract:
PROBLEM TO BE SOLVED: To provide an epoxy resin composition which is excellent in adhesion and reliability, while enabling a resin-sealed semiconductor device to be lessened in size and improved in performance, and provide also a semiconductor device sealed up with the epoxy resin composition. SOLUTION: A semiconductor device is equipped with a semiconductor element 1, a board 2 mounted with the semiconductor element 1, and an epoxy resin composition 3 which seals up the semiconductor element 1, where the epoxy resin composition 3 is formed only on the one surface of the board 2 and contains epoxy resin, curing agent, and inorganic filler, and the physical properties of the cured epoxy resin composition are as follows; flexual modulus is 10-30 GPa at a temperature of 23 deg.C, linear expansion coefficient is 4 to 20×10-6/K in a temperature range of 23 deg.C to a glass transition temperature, the product of flexual modulus at 23 deg.C and linear expansion coefficient in a temperature range of 23 deg.C to glass transition temperature is below 3×10-4 GPa/K, and glass transition temperature is above 150 deg.C.
Abstract:
PROBLEM TO BE SOLVED: To obtain an epoxy resin compsn. having improved storability and blocking resistance and excellent fluidity in the molding step by using a curing accelerator having a specified melting point. SOLUTION: This compsn. comprises (A) an epoxy resin, (B) a curing agent, and (C) one or more curing accelerators. At least one curing accelerator has an m.p of 85 to 295 deg.C. The epoxy resin (A) is preferably one having an ICI melt viscosity at 150 deg.C of not higher than 3ps. As the curing accelerator (C), a triphenylphosphine derivative is preferably used because the excellent fluidity of the epoxy resin compsn. is obtained therewith. Among triphenylphosphine derivatives, triphenylphosphine/1,4-benzoquinone adduct (m.p. 250 deg.C) excellent in fluidity, storability and blocking resistance is particularly preferred. A curing accelerator having a melting point in this range is contained in an amount of preferably at least 40wt.% (still preferably at least 60wt.%) based on all the curing accelerators.
Abstract:
PURPOSE:To obtain improved reliability by suppressing the generation of interfa cial separation of resin and a chip in the soldering process of a semiconductor device, and to provide a semiconductor sealing epoxy resin composition having excellent moldability and outstanding reliability under high temperature environ ment such as semiconductor, having large heating power, and around a motorcar engine. CONSTITUTION:The title epoxy composition is the resin composition containing a denatured styrene block copolymer, containing epoxy resin, a hardener and a filling agent and a hydrosulfite compound as ingredient composition, and the denatured styrene block copolymer. The modified styrene block copolymer is copolymerized or graft-reacted to a styrene block copolymer using unsaturated calborylic acid or its derivative, and it contains a hydrosulfite compound of 0.01 to 10wt.%. Accordingly, the composition is excellent in moldability, soldering temperature resistance, high temperature resistance and dampproof property, and it is useful in industrial production.