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公开(公告)号:JPH08250659A
公开(公告)日:1996-09-27
申请号:JP5097495
申请日:1995-03-10
Applicant: TOSHIBA CORP
Inventor: MIZUSAWA YUMI , MORI MIKI , SAITO MASAYUKI
IPC: H01L27/04 , H01L21/822
Abstract: PURPOSE: To miniaturize a thin film capacitor and improve its withstand voltage. CONSTITUTION: The title thin film capacitor is provided with the following; a substrate 1, a first conductor thin film 2 formed on the substrate, a dielectric thin film 3 and a first bump 101 which are formed on the different regions on the first conductor thin film, a second conductor thin film 4 laminated on the dielectric thin film, and a second bump 102 formed on the second conductor thin film. The edge of the second conductor thin film 4 is isolated from the edge of the dielectric thin film 3 toward the inside by 10μm or more.
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公开(公告)号:JPH0832027A
公开(公告)日:1996-02-02
申请号:JP16148494
申请日:1994-07-13
Applicant: TOSHIBA CORP
Inventor: MIZUSAWA YUMI
IPC: H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
Abstract: PURPOSE:To obtain a thin film capacitor of large capacitance density and high reliability, by forming a first conducting thin film whose main component is In2O3, a dielectric thin film whose main component is SrTiO3 and a conducting thin film, in order on a substrate. CONSTITUTION:Alcoxide of In and alcoxide of Sn are mixed, hydrolyzed, subjected to spin-coating on the surface of an AIN substrate 1, dried, and then sintered to form an ITO film. A resist pattern is formed on the ITO film, etching is performed the resist pattern is peeled, and a lower electrode 2 is formed. Carbonate of Sr and alcoxide of Ti are mixed, subjected to spin-coating on a lower electrode film, dried, and sintered to form an SrTiO3 film. A resist pattern is formed on the SrTiO3 film, etching is performed, the resist pattern is peeled, and a dielectric layer 3 is formed. An upper electrode 4 composed of an ITO film similar to the lower electrode 2 is formed on the dielectric layer 3.
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公开(公告)号:JPH06268262A
公开(公告)日:1994-09-22
申请号:JP5368693
申请日:1993-03-15
Applicant: TOSHIBA CORP
Inventor: MIZUSAWA YUMI , ICHIHARA KATSUTARO
Abstract: PURPOSE:To obtain a light emitting end face steep in form by a method wherein a light emitting end face is made to approach a magnetron discharge section, arranged vertical to the direction of a magnetic field, and subjected to dry etching processing. CONSTITUTION:An EL thin film 72 of electroluminescence is sandwiched in between conductive thin films through the intermediary of an insulating thin film to constitute an end face-light emitting device 7, and the light emitting end face 721 of the emitting device 7 is dry-etched. A processing chamber 1 is exhausted through an exhaust port 2, then a mixed gas of CH4 and H2 is introduced into the chamber 1 through a gas inlet port 3, a power supply 8 is applied to a substrate holder 4 through the intermediary of a direct current breaking capacitor to excite a magnetron to start discharging 10. The direction of a magnetic field applied to a space under the element 7 is vertical to that of an electrical field under the element 7, so that a magnetron discharge 10 high in activity is excited under the element 7. An end face light emitting device is formed as mentioned above, so that a light emitting device which is provided with a steep light emitting end face, small in light loss, and high in efficiency can be manufactured.
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公开(公告)号:JPH0936169A
公开(公告)日:1997-02-07
申请号:JP18161095
申请日:1995-07-18
Applicant: TOSHIBA CORP
Inventor: MIZUSAWA YUMI , KIZAKI YUKIO , MORI MIKI , SAITO MASAYUKI , HONMA SOICHI
IPC: H01L21/60
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element well connected to an aluminum wiring pattern on an insulating board through bumps and a semiconductor device of high connection reliability by a method wherein a gold thin film is formed on the uppermost surface of a bump and prescribed in thickness. SOLUTION: A semiconductor element 1 is electrically connected to an aluminum wiring pattern 14 formed on an insulating board 13 through the intermediary of a bump 2, wherein a gold thin film 2/3 to twice as thick as the aluminum wiring pattern 14 is formed on the uppermost surface of the bump 2. For instance, the bump electrode 2 is formed on the surface of the semiconductor element 1, wherein the bump electrode 2 is composed of a main bump layer and a gold train film formed on the main bump layer. The bump layer 3 of Cu, Ni, or solder is formed as thick as 10 to 30μm.
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公开(公告)号:JPH0547055A
公开(公告)日:1993-02-26
申请号:JP20579591
申请日:1991-08-16
Applicant: TOSHIBA CORP
Inventor: KIKITSU SATORU , ICHIHARA KATSUTARO , ASHIDA SUMIO , MIZUSAWA YUMI
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To eliminate the need for initializing magnets exclusive for external magnetic fields at the time of recording by laminating a reproducing layer and a recording layer so to be exchange bonded and the recording layer and a bias layer so as to be magnetostatically bonded, thereby the bias layer is not allowed to invert in magnetization under max. temp. in the recording, erasing and reproducing stages. CONSTITUTION:The reproducing layer 1, the recording layer 2 and the bias layer 4 are successively laminated from the incident side of a layer 8 in such a manner that the reproducing layer 1 and the recording layer 2 are mainly exchange bonded and that the recording layer 2 and the bias layer 4 are mainly make magnetostatically bonded. Amorphous RE-TM films, etc., are applicable as the reproducing layer 1 and the recording layer 2. RE-TM films, etc., which are not inverted in magnetization by recording, erasing and reproducing operations and have the sensitivity lower than the sensitivity of the recording layer 2 are used as the bias layer 4. The combined thickness of the reproducing layer 1 and the recording layer is reduced to the extent at which the sufficient inversion in magnetization is induced by the irradiation with a laser of a recording level. The bias layer 4 may be as thick as to locally generate a magnetization distribution when locally heated by the irradiation with the laser and to generate a leaking magnetic field on the outside of the bias layer 4.
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公开(公告)号:JPH04358339A
公开(公告)日:1992-12-11
申请号:JP13444491
申请日:1991-06-05
Applicant: TOSHIBA CORP
Inventor: ICHIHARA KATSUTARO , ASHIDA SUMIO , KIKITSU SATORU , MIZUSAWA YUMI
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To provide the magneto-optical recording medium which allows multi- valued recording and light power modulated overwriting without using an intricate means for impressing external magnetic fields. CONSTITUTION:This magneto-optical recording medium has a recording layer 1 having a magnetic freezing phenomenon and a magnetic bias layer 2 for imparting the bias magnetic field changing according to the temp. of this recording layer 1. Since the recording layer 1 is varied in the magnitude of the magnetization in the case of cooling from above the magnetic freezing temp. by the magnitude of the imparted magnetic field, the execution of the multi-valued recording and overwriting is allowed by varying the power of the laser beam to be cast to multiple steps thereby varying the magnitude of the magnetic field to be imparted by the bias layer 2 to the recording layer 1.
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公开(公告)号:JPH0992651A
公开(公告)日:1997-04-04
申请号:JP24953495
申请日:1995-09-27
Applicant: TOSHIBA CORP
Inventor: MIZUSAWA YUMI , TAKAGI AYAKO , SAITO MASAYUKI
IPC: G02F1/136 , H01L21/321 , H01L21/60 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide a reliable semiconductor element easy to repair and its connection method. SOLUTION: A bump electrode 2 is made up of a signal bump electrode 21 mainly effective in electrical connection and a fixing bump electrode 22 mainly effective in mechanical connection. In a continuity test for a semiconductor element 1, only the fixing bump electrode 22 is joined with a wiring pattern in a solid-phase diffusion state. After the continuity test, the signal bump electrode 21 is also joined with the wiring pattern in a solid-phase diffusion state. When the semiconductor device 1 is repaired, damage to a position of wiring pattern to be joined with the signal bump electrode 21 is prevented, and even when the repair is repeated, reliability in a bump electrode 2 is not reduced.
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公开(公告)号:JPH0589543A
公开(公告)日:1993-04-09
申请号:JP25182491
申请日:1991-09-30
Applicant: TOSHIBA CORP
Inventor: ASHIDA SUMIO , INAMI TOSHIYA , MIZUSAWA YUMI , KIKITSU SATORU , HORI AKIO , ICHIHARA KATSUTARO
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To provide the magneto-optical recording method which can greatly improve a recording density and the reproducing method which can effectively reproduce high-density recording information. CONSTITUTION:The magneto-optical recording medium having two recording layers 2, 3 on a substrate 1 is prepd. This medium is irradiated with light of two different wavelengths and only the respective recording layers are heated by the light of the respective wavelengths, by which recording and erasing are executed. The information of the recording layer 3 of the medium having the two recording layer 2, 3 recorded with the information is reproduced by the light of the wavelength having a high magneto-optical effect to the recording layer 3 and a low magneto-optical effect to the recording layer 2. The information of the recording layer 2 is reproduced by the light of the wavelength having the high magneto-optical effect to the recording layer 2 and the low magneto-optical effect to the recording layer 3.
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公开(公告)号:JPH04212743A
公开(公告)日:1992-08-04
申请号:JP2142791
申请日:1991-01-23
Applicant: TOSHIBA CORP
Inventor: ICHIHARA KATSUTARO , ASHIDA SUMIO , KIKITSU SATORU , MIZUSAWA YUMI
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To provide the magneto-optical recording method where a practical optical power modulation overwriting can be obtained and the magneto-optical recording medium used therefor. CONSTITUTION:Information can be recorded and erased by irradiating the optical beams of two different power levels against the magneto-optical medium provided with the recording layer and the bias layer connected magneto-statically to the recording layer. At this time, magnetizationreversal temperature is reached by the part of the recording medium irradiated by the beam with irradiation of high level beam, and the direction of the magnetization of this part follows the direction of the leaked magnetic flux generated due to distribution of magnetization formed by heating of the bias layer. Furthermore, with low level beam irradiation, the magnetization reversal temperature is reached by the part of the recording layer irradiated by the beam, and the leaked magnetic flux smaller than that with the high level beam irradiation is generated from the bias layer, and the direction of the magnetization of the recording layer follows the direction reverse to the direction of the leaked magnetic flux at the time of the high level beam irradiation. Then, the direction of the magnetization of the bias layer is the same before and after irradiation of the high level beam as well as before and after the irradiation of the low level beam.
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公开(公告)号:JPH03283032A
公开(公告)日:1991-12-13
申请号:JP8111490
申请日:1990-03-30
Applicant: TOSHIBA CORP
Inventor: KIKITSU SATORU , ICHIHARA KATSUTARO , ASHIDA SUMIO , MIZUSAWA YUMI
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To obtain a recording medium showing little frequency variation in the formed magnetic domains even for recording from a signal source of low accuracy by preliminarily forming rows of inversion magnetization domains in a recording auxiliary layer comprising a perpendicular magnetization film so that the magnetization of the magnetic domains can not be reinversed during recording or erasing. CONSTITUTION:The row of inversion magnetization domains is preliminarily formed in the recording auxiliary layer in a manner that the magnetization in these domains can not be reinversed during recording or erasing. The coercive force Hc, saturation magnetization Ms, interfacial magnetic wall energy density Hw, film thickness (h), exchange force Hexg, and external magnetic field Hex satisfy the relation of formula I and formula II in the storage temp. to the medium temp. on recording and reproducing. On recording, the frequency of laser pulse which irradiates the medium is synchronized with the row of the inversion magnetization domains formed in the recording auxiliary layer. Thereby, variation of the recording frequency is made small when the inversion magnetization domains are formed in the recording auxiliary layer. Thus, even for a signal source of bad accuracy, recording magnetic domains of little variation can be formed.
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