公开(公告)号：JPH07307454A

公开(公告)日：1995-11-21

申请号：JP21682494

申请日：1994-09-12

Applicant: TOSHIBA CORP

Inventor： KATO RIICHI ,  TANAMOTO TETSUSHI ,  SAWA MINORU ,  NARUSE YUJIRO ,  TAKAHASHI SHIGEKI ,  MASHITA MASAO

IPC: H01L29/06 ,  B81B1/00 ,  B81C1/00 ,  B82Y10/00 ,  B82Y15/00 ,  G01N13/12 ,  H01L29/66 ,  H03K19/08

Abstract: PURPOSE:To stabilize the operation of a quantum effect device by arranging one cell constituting the quantum effect device in a manner that is will work with the other two cells adjacent thereto physically and mutually. CONSTITUTION:In a cell connection type inverter device where quantum dot cells C1 to C4 are arranged in a loop, '0' is inputted to the cell C1. Then the cell C1 becomes in a ground state PSI0, and the cell C2 becomes in a ground state PSI1 due to a Coulomb repulsion. On the other hand, the cell 3 becomes in a ground state PSI0. As a result, the cell C4 becomes in a ground state PSI1. The cell C1 as an input cell and the cell C4 as an output cell show different ground states respectively. Therefore, since a quantum dot cell showing an unstable state hardly exists, a cell connection type inverter device where '1' is surely outputted when '0' is inputted and '0' is surely outputted when '1' is inputted can be realized.

公开(公告)号：JPH08248064A

公开(公告)日：1996-09-27

申请号：JP5594995

申请日：1995-03-15

Applicant: TOSHIBA CORP

Inventor： SAWA MINORU ,  CHO TOSHI ,  SAKAI TADASHI ,  KATO RIICHI ,  TANAMOTO TETSUSHI

IPC: G01R1/067 ,  G01Q60/10 ,  G01Q80/00 ,  G01R1/073 ,  H01L21/027 ,  H01L21/306

Abstract: PURPOSE: To obtain a fine pattern forming apparatus for forming a fine structure on the order of nm. CONSTITUTION: The fine pattern forming apparatus comprises a body to be processed connected with one electrode of a DC power supply circuit with an electron-sensitive resist layer 5 being provided on the surface thereof, and a transfer pattern plate 1 having a protruding pattern of conductive material, or covered with a conductive material, connected with the other electrode of the DC power supply circuit and disposed closely or tightly to the electron- sensitive resist layer 5 on the body to be processed. The transfer pattern plate 1 is fixed to the probe part of a scanning probe unit and the electron-sensitive resist layer 5 is exposed selectively by controlling the operation of the probe part.

公开(公告)号：JPH114024A

公开(公告)日：1999-01-06

申请号：JP15555497

申请日：1997-06-12

Applicant: TOSHIBA CORP ,  ISHIKAWAJIMA HARIMA HEAVY IND ,  KOKUSAI CHODENDO SANGYO GIJUTS

Inventor： SAWA MINORU ,  SHIOBARA TORU ,  ENOMOTO YOICHI ,  EUGENE GOODERIN ,  TAGAMI MINORU

IPC: C01G1/00 ,  C01G3/00 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To make it possible to suppress dielectric loss without disturning the crystal structure of a wiring by a method wherein a material, having resistance value higher than the specific value in the environment of specific temperature or lower and the relative dielectric constant lower than the specific value, is used. SOLUTION: A base insulating layer 2, a superconducting wiring 3 consisting of oxide superconducting material, an interlayer insulating layer 4 and a superconducting wiring 5, consisting of oxide superconducting material, are formed on a substrate 1. At this point, an REBa2 Cu2 O7-δ (RE indicates the rare-earth element containing Y) oxide superconducting material is used for the superconducting wirings 3 and 5. As the base insulating layer 2 and the interlayer insulating layer 4, the material, consisting of RE, Ba and Cu and having highresistance value of 10 Ω/cm or higher at 77K or less in an operating temperature region and the relative dielectric constant of 30 or lower, is used for the purpose of accomplishment of low dielectric loss and excellent insulating property.