METHOD AND DEVICE FOR CUSTOMIZING FACIAL EXPRESSIONS OF USER

    公开(公告)号:US20210390792A1

    公开(公告)日:2021-12-16

    申请号:US17462113

    申请日:2021-08-31

    Abstract: A method for customizing facial expressions of a user includes: obtaining a RGB-D image sequence, performing non-rigid registration on a three-dimensional (3D) face template model with a depth map and face feature points corresponding to the RGB-D image sequence, inputting each vertex in the non-rigid registration result into the depth map to generate a set of deformation data, and deforming the 3D face template model based on the set of deformation data; reconstructing face details in the RGB-D image sequence, and generating a 3D neutral face model based on the deformed 3D face template model and the reconstructed 3D face template model; processing the 3D neutral face model and a face hybrid template to generate a face hybrid model; tracking the face in the RGB-D image sequence to generate a face tracking result; and updating the face hybrid model based on the face tracking result and customizing the facial expressions.

    NANOWIRE TRANSISTOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210184025A1

    公开(公告)日:2021-06-17

    申请号:US17058211

    申请日:2018-08-03

    Abstract: A nanowire transistor and a manufacture method thereof are provided. The nanowire transistor includes a semiconductor wire, a semiconductor layer, a source electrode and a drain electrode. The semiconductor wire includes a first semiconductor material and includes a source region, a drain region, and a channel region, along an axial direction of the semiconductor wire, the channel region is between the source region and the drain region; the semiconductor layer includes a second semiconductor material and covers the channel region of the semiconductor wire; the source electrode is in the source region of the semiconductor wire and is in direct contact with the source region of the semiconductor wire, and the drain electrode is in the drain region of the semiconductor wire and is in direct contact with the drain region of the semiconductor wire.

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