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公开(公告)号：US20240133742A1
公开(公告)日：2024-04-25
申请号：US17973083
申请日：2022-10-24
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Andrej Mitrovic , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
CPC classification number: G01J3/443 , G01J3/0205
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.
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公开(公告)号：US20210358807A1
公开(公告)日：2021-11-18
申请号：US17321041
申请日：2021-05-14
Applicant: Tokyo Electron Limited
Inventor： Blaze Messer , Andrew Metz
IPC: H01L21/768 , H01L21/67 , H01L21/311
Abstract: In certain embodiments, a method for processing a semiconductor substrate includes receiving a semiconductor substrate that includes a nitride etch stop layer aligned to a gate electrode and a metal-based etch stop layer aligned to a source/drain contact region. The method further includes selectively etching the metal-based etch stop layer, to remove the metal-based etch stop layer and expose a surface of the source/drain contact region, by exposing the semiconductor substrate to a plasma formed in a gas comprising a corrosive material and fluorocarbon.
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公开(公告)号：US20240339309A1
公开(公告)日：2024-10-10
申请号：US18298259
申请日：2023-04-10
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Francisco Machuca , Blaze Messer , Yan Chen , Ying Zhu , Mihail Mihaylov , Joel Ng , Ashawaraya Shalini , Da Song , Akiteru Ko
CPC classification number: H01J37/32972 , H01J37/18 , H01J37/32357 , H01J37/32963 , H01J2237/3343
Abstract: A processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first RF power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (OES) measurement assembly including an OES detector configured to measure OES signals from the plasma.
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公开(公告)号：US20240136164A1
公开(公告)日：2024-04-25
申请号：US17972958
申请日：2022-10-24
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
IPC: H01J37/32
CPC classification number: H01J37/32972 , H01J37/32926
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.
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Patent Agency Ranking
公开(公告)号：US12191202B2
公开(公告)日：2025-01-07
申请号：US17321041
申请日：2021-05-14
Applicant: Tokyo Electron Limited
Inventor： Blaze Messer , Andrew Metz
IPC: H01L21/768 , H01L21/311 , H01L21/67
Abstract: In certain embodiments, a method for processing a semiconductor substrate includes receiving a semiconductor substrate that includes a nitride etch stop layer aligned to a gate electrode and a metal-based etch stop layer aligned to a source/drain contact region. The method further includes selectively etching the metal-based etch stop layer, to remove the metal-based etch stop layer and expose a surface of the source/drain contact region, by exposing the semiconductor substrate to a plasma formed in a gas comprising a corrosive material and fluorocarbon.
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公开(公告)号：US20240234111A9
公开(公告)日：2024-07-11
申请号：US17972958
申请日：2022-10-25
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
IPC: H01J37/32
CPC classification number: H01J37/32972 , H01J37/32926
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.
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公开(公告)号：US12158374B2
公开(公告)日：2024-12-03
申请号：US17973083
申请日：2022-10-25
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Andrej Mitrovic , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.
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公开(公告)号：US20240230409A9
公开(公告)日：2024-07-11
申请号：US17973083
申请日：2022-10-25
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Andrej Mitrovic , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
CPC classification number: G01J3/443 , G01J3/0205
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.
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公开(公告)号：US20240094056A1
公开(公告)日：2024-03-21
申请号：US17948407
申请日：2022-09-20
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
CPC classification number: G01J3/443 , H01J37/32146 , H01J37/32972 , H01J2237/24485 , H01J2237/24507 , H01J2237/24585 , H01J2237/334
Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.
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