Abstract:
A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.
Abstract:
A head for a grass trimmer and the structure thereof and in which flexible filaments of a predetermined or required length are payed out by repetitive release and connection of a drive shaft and a spool having the flexible filaments wound thereon and which is to easy to mount and remove and which structure makes it convenient to handle the flexible filaments.
Abstract:
A cord cutter head for use in, for example, a cord cutter type grass trimmer has a housing having a downward opening, a spool mounted substantially in the center of the housing and carrying a flexible cutter cord wound thereon. An aperture is formed in the wall of the housing so as to allow the portion of the cutter cord unwound from the spool to pass therethrough. The axis of the aperture is offset with respect to the central axis of the housing to the trailing side as viewed in the direction of rotation, thus imparting a bend to the cutter cord.
Abstract:
A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
Abstract:
A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.
Abstract:
A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.
Abstract:
A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
Abstract:
An image reading device having plural image sensors and a reading controller is disclosed. The image reading device is for obtaining image data over a subject by joining sub-image data outputs read by the image sensors, each image sensor comprising: a signal amplifier; and an A/D converter for converting an analog value output from the image sensor to a digital value; whereby the reading controller adjusts an amplification factor of each signal amplifier so that a read value of a white board read by each image sensor becomes a predetermined value.
Abstract:
A cord cutter head for use in, for example, a cord cutter type grass trimmer has a housing having which is provided with a downwardly directed opening, and a spool carrying a flexible cutter cord wound thereon. The spool is formed integrally with the housing such that its lower end portion is projected under the housing through the downward opening. The housing has an aperture formed in the wall thereof and adapted to allow the unwound cutter cord to be extracted outside therethrough. The user can rewind the cutter cord from the exposed portion of the spool by his fingers without difficulty.
Abstract:
An electron source 10 has an n-type silicon substrate 1, a drift layer 6 formed on one surface of the substrate 1, and a surface electrode 7 formed on the drift layer 6. A voltage is applied so that the surface electrode 7 becomes positive in polarity relevant to the substrate 1, whereby electrons injected from the substrate 1 into the drift layer 6 drift within the drift layer 6, and are emitted through the surface electrode 7. In a process for manufacturing this electron source 10, when the drift layer 6 is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.