公开(公告)号：SG11201609947WA

公开(公告)日：2016-12-29

申请号：SG11201609947W

申请日：2016-01-08

Applicant: ULVAC INC

Inventor： MURAYAMA TAKAHIDE ,  MORIKAWA YASUHIRO ,  SAKUISHI TOSHIYUKI

IPC: H01L21/3065 ,  H05H1/46

Abstract: A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

公开(公告)号：EP2267764A4

公开(公告)日：2011-05-04

申请号：EP09718527

申请日：2009-03-05

Applicant: ULVAC INC

Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU ,  MURAYAMA TAKAHIDE

IPC: H01L21/3065

CPC classification number: H01J37/34 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/30655