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    PLASMA PROCESSING DEVICE
    1.
    发明专利
    PLASMA PROCESSING DEVICE 未知

    公开(公告)号：SG11201609947WA

    公开(公告)日：2016-12-29

    申请号：SG11201609947W

    申请日：2016-01-08

    Applicant: ULVAC INC

    Inventor： MURAYAMA TAKAHIDE ,  MORIKAWA YASUHIRO ,  SAKUISHI TOSHIYUKI

    IPC: H01L21/3065 ,  H05H1/46

    Abstract: A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

    3.
    发明专利
    未知

    公开(公告)号：DE112007001243T5

    公开(公告)日：2009-05-28

    申请号：DE112007001243

    申请日：2007-05-16

    Applicant: ULVAC INC

    Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU

    IPC: H01L21/3065 ,  H01L21/768 ,  H01L23/522

    Abstract: A method for dry etching an interlayer insulating film with an ArF resist or KrF resist thereon comprises dry etching fine features into the interlayer insulating film with an etching gas in such a manner as to form a polymer film on the ArF or KrF resist from the etching gas, wherein the etching gas is introduced under a pressure of 0.5 Pa or less, and wherein a Fourier transform infrared spectrum of the polymer film includes a C—F bond peak at about 1200 cm−1, a C—N bond peak at about 1600 cm−1, and a C—H bond peak at about 3300 cm−1.

    Verfahren zum Trockenätzen einer Zwischenisolierschicht
    4.
    发明专利
    Verfahren zum Trockenätzen einer Zwischenisolierschicht 未知

    公开(公告)号：DE112007001243B4

    公开(公告)日：2015-01-22

    申请号：DE112007001243

    申请日：2007-05-16

    Applicant: ULVAC INC

    Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU

    IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/768

    Abstract: Ein Verfahren zum Trockenätzen einer Zwischenisolierschicht mit einem darauf befindlichen ArF-Fotolack oder KrF-Fotolack umfasst Trockenätzen feiner Merkmale in die Zwischenisolierschicht mit einem Ätzgas derart, dass sich aus dem Ätzgas eine Polymerschicht auf dem ArF- oder KrF-Fotolack bildet, wobei das Ätzgas unter einem Druck von 0,5 Pa oder weniger eingeleitet wird, und wobei ein Fourier-TransformationsInfrarot-Spektrum der Polymerschicht eine C-F-Bindungsspitze bei ungefähr 1200 cm–1, eine C-N-Bindungsspitze bei ungefähr 1600 cm–1 und einen C-H-Bindungsspitze bei ungefähr 3300 cm–1 umfasst.

    Dry etching method
    5.
    发明专利
    Dry etching method 未知

    公开(公告)号：AU2008239010A1

    公开(公告)日：2008-10-23

    申请号：AU2008239010

    申请日：2008-04-10

    Applicant: ULVAC INC

    Inventor： SUU KOUKOU ,  MORIKAWA YASUHIRO

    IPC: H01L21/3065

    Abstract: [Object] To provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. [Solving Means] In a dry etching method according to the present invention, a substrate in which a semiconductor layer (21) is formed on an insulating layer (23) formed of a silicon oxide is prepared, a through-hole (25) is formed in the semiconductor layer (21), and a resin film (27) is formed on side walls of the through-hole (25) and a recessed portion (26) while forming the recessed portion (26) in the insulating layer (23) by etching an area in which the insulating layer (23) is exposed via the through-hole (25). By forming the resin film (27) on the side wall of the recessed portion (26), the side wall of the recessed portion (26) is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed. Furthermore, by forming the resin film (27) on the side wall of the through-hole (25), the side wall of the through-hole (25) is protected from the collision of ions in plasma and a hole shape of the through-hole (25) is prevented from fluctuating.

    Dry etching apparatus and dry etching method
    6.
    发明专利
    Dry etching apparatus and dry etching method 未知

    公开(公告)号：AU2008250190A1

    公开(公告)日：2008-11-20

    申请号：AU2008250190

    申请日：2008-05-08

    Applicant: ULVAC INC

    Inventor： HAYASHI TOSHIO ,  SUU KOUKOU ,  MORIKAWA YASUHIRO

    IPC: H01L21/3065 ,  C23C4/10

    Abstract: A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.

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