公开(公告)号：JP2001007107A

公开(公告)日：2001-01-12

申请号：JP16542499

申请日：1999-06-11

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU ,  KO EKIMEI ,  YO MEISEI ,  WU JUAN-YUAN ,  RO KATETSU

IPC: H01L23/52 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To prevent the electrical resistance of wiring from increasing by providing a dummy pattern which protects from excessive erosion caused by CMP(chemical mechanical polishing) within a high-density array. SOLUTION: An opening 200a and a groove 200b are formed in a dielectric layer 204 on a semiconductor substrate 202, and another opening 208 is simultaneously formed in the outside of the groove 200b when the opening 200a and the groove 200b are formed. Then, when metal is to be filled into the openings 200a and 200b, the metal is filled also into the opening 208, thus wiring 214a and 214b in a high-density array 206 and a metal line 216 in a dummy pattern 210 are formed. In this manner, the metal line 216 is allowed to function as a buffer material for preventing the wiring 214a and 214b from being excessively eroded.