公开(公告)号：JP2001035822A

公开(公告)日：2001-02-09

申请号：JP19511999

申请日：1999-07-08

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO MEISEI ,  CHIN GAKUCHU ,  RIN SOEI ,  WU JUAN-YUAN

IPC: H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing station that allows an operator to know the completion of polishing with ease. SOLUTION: This chemical mechanical polishing station serves to polish wafers in a damascene process step, and comprises a slurry supplier 32, a polishing pad 30, a polishing head 36 for decending wafer 38 while holding and rotating the wafer 38, a light emitting device 40 for irradiating slurry 34 with a light beam, an optical sensor 41 for receiving a reflected beam, and a spectrum analyzer connected to the sensor 41 for analyzing changes in color within the slurry 34.

公开(公告)号：JP2001007107A

公开(公告)日：2001-01-12

申请号：JP16542499

申请日：1999-06-11

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU ,  KO EKIMEI ,  YO MEISEI ,  WU JUAN-YUAN ,  RO KATETSU

IPC: H01L23/52 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To prevent the electrical resistance of wiring from increasing by providing a dummy pattern which protects from excessive erosion caused by CMP(chemical mechanical polishing) within a high-density array. SOLUTION: An opening 200a and a groove 200b are formed in a dielectric layer 204 on a semiconductor substrate 202, and another opening 208 is simultaneously formed in the outside of the groove 200b when the opening 200a and the groove 200b are formed. Then, when metal is to be filled into the openings 200a and 200b, the metal is filled also into the opening 208, thus wiring 214a and 214b in a high-density array 206 and a metal line 216 in a dummy pattern 210 are formed. In this manner, the metal line 216 is allowed to function as a buffer material for preventing the wiring 214a and 214b from being excessively eroded.

公开(公告)号：JP2000306867A

公开(公告)日：2000-11-02

申请号：JP11076999

申请日：1999-04-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU ,  YU KEISEI ,  WU JUAN-YUAN ,  RO KATETSU

IPC: H01L21/768 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3063

Abstract: PROBLEM TO BE SOLVED: To provide a method for increasing uniformity of mechanochemical polishing, using an electrolytic conductor layer. SOLUTION: In this method for increasing uniformity of mechanochemical polishing using an electrolytic conductor layer, upon formation of a conductor layer, the conductor layer is processed in an electrolytic process to decrease the thickness of the conductor layer and remove uneven parts on its surface, and thereafter the surface of the conductor layer is polished in a mechanochemical polishing process. The thickness of the conductor layer is decreased by the electrolytic process, thereby shortening the time necessary by the subsequent mechanochemical polishing process. At the same time, since charges 34 are concentrated on projected parts on the surface of the conductor layer, the electrolysis rate of the projected parts becomes faster than that of recessed parts thereon, unevenness on the conductor layer surface is improved. When the conductor layer is formed through electroplating, its efficiency is further improved.

公开(公告)号：JP2001088019A

公开(公告)日：2001-04-03

申请号：JP26796699

申请日：1999-09-22

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU ,  YO MEISEI ,  WU JUAN-YUAN

IPC: B24B57/02 ,  B24B37/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a chemical machine polishing device capable of controlling slurry. SOLUTION: Slurry is dispersed through a screen net in advance before it is supplied to a polishing pad by means of a pump. Thereby the slurry can be supplied to the whole surface of the polishing pad uniformly when it is fed to the pad. Lattice portions of the net are positioned to have different density. Thereby the object to control the distribution of slurry is attained.

公开(公告)号：JP2000306872A

公开(公告)日：2000-11-02

申请号：JP11124999

申请日：1999-04-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO MEISEI ,  CHIN GAKUCHU ,  WU JUAN-YUAN

IPC: B24B37/013 ,  H01L21/304 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To determine the polishing end point of a chemical-mechanical polishing process by forming, on a first layer of a wafer, a second layer which is made of a material whose polishing/removing speed is different from those of a material of which the first layer is made, and continuously measuring the electrical resistance of a slurry produced during the polishing of the second layer. SOLUTION: A wafer has a metallic layer 22 such as an Al layer formed on a substrate 20, and a dielectric layer 24 such as an oxide layer formed on the layer 22. Then, openings 26a, 26b and 28 are formed, and a metallic layer 30 such as a Cu layer is formed on the layer 24, while filling in the openings 26a, 26b and 28. Using the layer 24 as a polishing stop layer, the layer 30 is chemically-mechanically polished to form metallic plugs 32a and 32b within the openings 26a, 26b and 28. The layer 30 is abutted to a polishing pad 40, and the pad 40 is rotated. During polishing, a slurry is supplied in a manner to circulate between the polishing pad and the wafer. Since the end point of the polishing process coincides with the instance at which the layer 24 is exposed and at which the amount of metal ions dissolved in the slurry is reduced during the process, the end point is determined by measuring the electrical resistance value of the slurry.

公开(公告)号：JP2000277472A

公开(公告)日：2000-10-06

申请号：JP8261899

申请日：1999-03-25

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU

IPC: H01L21/304 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  G01B11/06 ,  G01N17/00 ,  H01L21/3105 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To detect the thickness of an insulating layer by, when a reflected light is measured using the incident light emitted to a material layer, integrating the intensity of reflected light along a time axis, and dividing the integration value by a product of the differential value of reflected light intensity and polishing time. SOLUTION: While a material layer is polished in chemical/mechanical polishing, a material is continuously irradiated with a laser beam as incident light. The reflected light is condensed to record its intensity, and the recorded intensity is integrated/differentiated for time. the integrated value of the intensity divided by the product of the differential value of intensity and time to provide an I-Dt curve, so that the peak 308-316 of the curve reflects a peculiar thickness value of the material layer. Thus, the intensity peak and bottom of the reflected light is accurately discriminated on the I-Dt curve for detecting the thickness of an insulating layer.

公开(公告)号：JP2000225558A

公开(公告)日：2000-08-15

申请号：JP2892299

申请日：1999-02-05

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU

IPC: B24B37/22 ,  B24D3/34 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad used in the chemical-mechanical polishing process for a semiconductor board and furnished with a pad body and an indication part to clearly indicate the degree of wear of the pad body. SOLUTION: To a polishing pad 20, slurry is supplied during the chemical- mechanical polishing process so as to polish a wafer. The degree of wear of the polishing pad 20 progresses in the course of the polishing process, and when the serviceable limit is approached or attained to require replacement of the pad in service with a new one, the hue of the indication part 22 and/or the slurry varies. This allows the operator to know that replacement should take place to led to prevention of an item polished from being damaged resuiting from the use of a poorly conditioned pad, enhancement of the product quality, heightening of the yield, and reduction of the manufacturing costs.