公开(公告)号：JP2000202262A

公开(公告)日：2000-07-25

申请号：JP1060999

申请日：1999-01-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO MEISEI ,  LAI CHIEN-HSIN ,  CHO KAZUI ,  WU JUAN-YUAN

IPC: B24B57/02 ,  B01F5/00 ,  B01F5/06 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a in situ mixing device improved in the mixing degree of slurry and capable of uniformly mixing. SOLUTION: The device has plural 1st tubes 104 each having a 1st diameter and plural 2nd tubes 102 each having a 2nd diameter, and is composed of a cylindrical main body 105 structured by alternately linking the 2nd tubes 102 and the 1st tubes 104 to each other and plural tapered plugs 103, and each of plural tapered plugs 103 is positioned inside each 2nd tube 103 and the tip part of the plug 103 face to the direction opposed to the flowing direction of fluid flowing in the cylindrical main body 105.

公开(公告)号：JP2001088019A

公开(公告)日：2001-04-03

申请号：JP26796699

申请日：1999-09-22

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU ,  YO MEISEI ,  WU JUAN-YUAN

IPC: B24B57/02 ,  B24B37/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a chemical machine polishing device capable of controlling slurry. SOLUTION: Slurry is dispersed through a screen net in advance before it is supplied to a polishing pad by means of a pump. Thereby the slurry can be supplied to the whole surface of the polishing pad uniformly when it is fed to the pad. Lattice portions of the net are positioned to have different density. Thereby the object to control the distribution of slurry is attained.

公开(公告)号：JP2000306872A

公开(公告)日：2000-11-02

申请号：JP11124999

申请日：1999-04-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO MEISEI ,  CHIN GAKUCHU ,  WU JUAN-YUAN

IPC: B24B37/013 ,  H01L21/304 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To determine the polishing end point of a chemical-mechanical polishing process by forming, on a first layer of a wafer, a second layer which is made of a material whose polishing/removing speed is different from those of a material of which the first layer is made, and continuously measuring the electrical resistance of a slurry produced during the polishing of the second layer. SOLUTION: A wafer has a metallic layer 22 such as an Al layer formed on a substrate 20, and a dielectric layer 24 such as an oxide layer formed on the layer 22. Then, openings 26a, 26b and 28 are formed, and a metallic layer 30 such as a Cu layer is formed on the layer 24, while filling in the openings 26a, 26b and 28. Using the layer 24 as a polishing stop layer, the layer 30 is chemically-mechanically polished to form metallic plugs 32a and 32b within the openings 26a, 26b and 28. The layer 30 is abutted to a polishing pad 40, and the pad 40 is rotated. During polishing, a slurry is supplied in a manner to circulate between the polishing pad and the wafer. Since the end point of the polishing process coincides with the instance at which the layer 24 is exposed and at which the amount of metal ions dissolved in the slurry is reduced during the process, the end point is determined by measuring the electrical resistance value of the slurry.

公开(公告)号：JP2001035822A

公开(公告)日：2001-02-09

申请号：JP19511999

申请日：1999-07-08

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO MEISEI ,  CHIN GAKUCHU ,  RIN SOEI ,  WU JUAN-YUAN

IPC: H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing station that allows an operator to know the completion of polishing with ease. SOLUTION: This chemical mechanical polishing station serves to polish wafers in a damascene process step, and comprises a slurry supplier 32, a polishing pad 30, a polishing head 36 for decending wafer 38 while holding and rotating the wafer 38, a light emitting device 40 for irradiating slurry 34 with a light beam, an optical sensor 41 for receiving a reflected beam, and a spectrum analyzer connected to the sensor 41 for analyzing changes in color within the slurry 34.

公开(公告)号：JP2001007107A

公开(公告)日：2001-01-12

申请号：JP16542499

申请日：1999-06-11

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN GAKUCHU ,  KO EKIMEI ,  YO MEISEI ,  WU JUAN-YUAN ,  RO KATETSU

IPC: H01L23/52 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To prevent the electrical resistance of wiring from increasing by providing a dummy pattern which protects from excessive erosion caused by CMP(chemical mechanical polishing) within a high-density array. SOLUTION: An opening 200a and a groove 200b are formed in a dielectric layer 204 on a semiconductor substrate 202, and another opening 208 is simultaneously formed in the outside of the groove 200b when the opening 200a and the groove 200b are formed. Then, when metal is to be filled into the openings 200a and 200b, the metal is filled also into the opening 208, thus wiring 214a and 214b in a high-density array 206 and a metal line 216 in a dummy pattern 210 are formed. In this manner, the metal line 216 is allowed to function as a buffer material for preventing the wiring 214a and 214b from being excessively eroded.

公开(公告)号：JPH11186200A

公开(公告)日：1999-07-09

申请号：JP34664497

申请日：1997-12-16

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO MEISEI ,  WU JUAN-YUAN ,  RO KATETSU ,  SUN SHIH-WEI

IPC: H01L21/304 ,  C09K3/14 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To enable CMP process of tungsten with the same polishing pad and the same polishing station, by polishing a dielectric layer after polishing process of a metal layer, and setting pH values of first slurry mixed solution and second slurry mixed solution in the respective specified ranges. SOLUTION: In a process, a chemically/mechanically polishing method is contained, a dielectric layer is formed, and at least one via of a through hole is formed in the dielectric layer. A tungsten layer is formed in the via and on the dielectric layer. In order to eliminate the tungsten layer form the dielectric layer, first slurry 42 having oxidizing component whose pH value is about 2-4 is used, and first chemically/mechanically polishing process is performed. By using second slurry whose pH value is about 2-4, second chemically/ mechanically polishing processing is performed, and the dielectric layer is polished.