公开(公告)号：JP2000332015A

公开(公告)日：2000-11-30

申请号：JP13164499

申请日：1999-05-12

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RYU SHIKEN ,  O KONCHI ,  SHA BUNEKI ,  KO MASUTAMI

IPC: H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To prevent flaking of a silicon-rich nitride(SRN) layer from a copper layer and the resulting diffusion of copper by causing dangling-bonded silicon within the SRN layer to react with the copper layer, to thereby form copper silicide between the SRN and copper layers. SOLUTION: A silicon rich nitride layer 212 is formed on a dielectric layer 202 by a plasma CVD method, using an evaporation gases, such as silane and ammonium. By adjusting the percentage of flow rate of silane to ammonium, the layer 212 results in containing more silicon component than nitrogen component. Since the layer 212 has a large number of Si-H dangling bonds therein, Si-H bonds react with copper, thereby forming a copper silicide layer 214 between the exposed copper layers 210b and 210c and the layer 212 and improving their adhesion. Therefore, the layer 212 will not exfoliate from copper due to stresses caused at its interface.

公开(公告)号：JP2000306862A

公开(公告)日：2000-11-02

申请号：JP11084699

申请日：1999-04-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SHA CHOKEI ,  O KONCHI ,  SHA BUNEKI

IPC: H01L21/768 ,  C23C14/50 ,  H01L21/203 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a method for uniformly coating the sidewall of a contact hole of a silicon wafer in a stepwise manner. SOLUTION: In coating the side of wall of a contact hole by a PVD method, a rotary pedestal 32 capable of tilting at a certain angle is used, a silicon wafer 30 having a plurality of contact holes therein is placed on the pedestal in a reaction chamber, a metal layer is deposited on the bottom surfaces of the contact holes with the pedestal disposed perpendicular to the depositing direction, the position of the pedestal is adjusted so that a normal of the pedestal forms a tilt angle with respect to the depositing direction, and finally the pedestal 32 is rotated to attain uniform deposition onto inner sidewalls of the contact holes of the silicon wafer.