公开(公告)号：JP2000195951A

公开(公告)日：2000-07-14

申请号：JP37406198

申请日：1998-12-28

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO MASUTAMI ,  YU SUIYO

IPC: H01L21/768 ,  H01L21/28

Abstract: PROBLEM TO BE SOLVED: To prevent a group of metallic atoms from spreading into a dielectric layer deposited on the sidewall of a double damask hole by forming an isometric barrier/an adhesive layer prior to performing the RIE treatment for exposing a metallized layer. SOLUTION: After formation of a double damask hole to expose a superposed layer 204, first an isometric barrier / an adhesive layer 216 is made, covering the whole sidewall of the double damask hole, in such a way as not to stop the double damask layer. Next, the bottom of the isometric barrier / adhesive layer 216 lying on the bottom of the double damask hole, and subsequently, the underlying section of the superposed layer 204 is removed until the metallized layer 204 is exposed by anisotropic etching processing. Lastly, conductive material 218 such as copper or the like is deposited on the residual cavity section of the double damask hole. The double damask structure is constituted of the combination of the deposited conductive material 218 and the residual section of the isotropic barrier / the adhesive layer within the double damask hole.

公开(公告)号：JP2000332015A

公开(公告)日：2000-11-30

申请号：JP13164499

申请日：1999-05-12

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RYU SHIKEN ,  O KONCHI ,  SHA BUNEKI ,  KO MASUTAMI

IPC: H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To prevent flaking of a silicon-rich nitride(SRN) layer from a copper layer and the resulting diffusion of copper by causing dangling-bonded silicon within the SRN layer to react with the copper layer, to thereby form copper silicide between the SRN and copper layers. SOLUTION: A silicon rich nitride layer 212 is formed on a dielectric layer 202 by a plasma CVD method, using an evaporation gases, such as silane and ammonium. By adjusting the percentage of flow rate of silane to ammonium, the layer 212 results in containing more silicon component than nitrogen component. Since the layer 212 has a large number of Si-H dangling bonds therein, Si-H bonds react with copper, thereby forming a copper silicide layer 214 between the exposed copper layers 210b and 210c and the layer 212 and improving their adhesion. Therefore, the layer 212 will not exfoliate from copper due to stresses caused at its interface.

公开(公告)号：JP2000216239A

公开(公告)日：2000-08-04

申请号：JP961599

申请日：1999-01-18

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO MASUTAMI ,  YEW TRI-RUNG ,  RO KATETSU

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To prevent the copper atoms sputtered during bombardment process from diffusing into a inter-metal dielectrics layer, by forming a barrier layer on a copper layer which is exposed at the bottom part of a via opening before bombardment process is performed with the bottom part of the via opening until the copper layer is exposed. SOLUTION: A barrier layer 322 is formed on a surface comprising the inside surfaces of groove openings 318a and 318b, the inside surface of a via opening 312a, and the surface of a copper oxide layer 320. Then bombardment process 324 is performed. Copper atoms 304 ejected from a copper layer 304 under the bombardment process 324 are prevented from diffusing inside a first dielectrics layer 306 by the presence of a barrier layer 322b on the side wall. A barrier layer 322 at the bottom part of the via opening 312a is removed. Then a groove 318 and the via opening 312a are filled by vapor-deposition of a conductor layer 326. The conductor layer 326 is directly connected to the copper layer 304. Thus, the copper atoms cannot diffuse into a dielectrics layer, while the resistance of a via plug is lowered.

公开(公告)号：JPH11260917A

公开(公告)日：1999-09-24

申请号：JP27038298

申请日：1998-09-24

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YEW TRI-RUNG ,  RO KATETSU ,  SUN SHIH-WEI ,  KO MASUTAMI

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a barrier layer for increasing the capability of a barrier layer for increasing adhesive strength between a low k (Low-k) dielectric layer and a barrier layer, and for preventing the diffusion of barrier layer conductive materials, and a method for manufacturing the barrier layer. SOLUTION: This is a barrier layer and a method for forming the barrier layer includes the following process. At first, a semiconductor substrate having a conductive layer already formed on this is prepared. Next, an organic low (k) dielectric layer is deposited so that the conductive layer and the semiconductor substrate can be covered. Then, an opening for exposing the conductive layer is formed in the dielectric layer. Afterwards, a first barrier layer is deposited in the opening and the surrounding area. The first barrier layer can be a silicon-containing layer or a doped silicon (doped-Si) layer formed by a plasma enhanced CVD (PECVD) method, low pressure CVD (KPCVD) method, electronic beam overprizing method, or platter method. At last, a second barrier layer is formed by covering the first barrier layer. The second barrier layer can be a titanium/titanium nitride(Ti/TiN), tungsten nitride (WN) layer, tantalum(Ta) layer, or tantalum nitride(TaN) layer.