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    FORMING METHOD FOR GATE OXIDE FILM
    1.
    发明专利
    FORMING METHOD FOR GATE OXIDE FILM 失效

    公开(公告)号：JP2000164861A

    公开(公告)日：2000-06-16

    申请号：JP33598398

    申请日：1998-11-26

    Applicant: UNITED MICROELECTRONICS CORP

    Inventor： SHIH HSUEH-HAO ,  WU JUAN-YUAN ,  RO KATETSU

    IPC: H01L29/78 ,  H01L21/28 ,  H01L21/316

    Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a gate oxide film of high reliability, wherein adverse effects from a natural oxide are eliminated. SOLUTION: A semiconductor substrate 100, wherein a natural oxide layer 102 is naturally generated is put in a furnace or an RTO chamber (rapid thermal oxidation chamber) and a hot hydrogen gas is introduced into the chamber so that the natural oxide layer 102 is deoxidized. After that, a gate oxide film is formed on the semiconductor substrate. Such semiconductor substrate as a gate oxide film 104a formed is moved into a reaction chamber by a vacuum transfer system, so that a polysilicon layer 106 is formed on the gate oxide film. Re generation of natural oxide layer is prevented, since no semiconductor substrate is exposed to an oxygen-contained atmosphere.

    MANUFACTURING METHOD OF SEMISPHERICAL SILICON CRYSTALLINE PARTICLE STRUCTURE
    3.
    发明专利
    MANUFACTURING METHOD OF SEMISPHERICAL SILICON CRYSTALLINE PARTICLE STRUCTURE 失效

    公开(公告)号：JPH11121718A

    公开(公告)日：1999-04-30

    申请号：JP1051198

    申请日：1998-01-22

    Applicant: UNITED MICROELECTRONICS CORP

    Inventor： YEW TRI-RUNG ,  RO KATETSU ,  SUN SHIH-WEI ,  SHIH HSUEH-HAO

    IPC: C23C16/04 ,  C23C16/24 ,  H01L21/02 ,  H01L21/205 ,  H01L21/285 ,  H01L21/8242 ,  H01L27/108

    Abstract: PROBLEM TO BE SOLVED: To obtain the capacitor storage node of an integrated circuit by a method wherein the title semispherical silicon crystalline particle structure is selectively formed by the chemical vapor phase synthetic process producing a by-product using chlorosilane as a precursor. SOLUTION: A substrate 20 having silicon oxide layers 24 and a contact hole 22 passing through them 24 is prepared while the contact hole 22 is filled up with polycystalline silicon so as to form a contact plug. After the formation of a polycrystalline silicon layer 26 on the contact hole 22 and the silicon oxide layers 24, the polycrystalline silicon layer 26 is patterned to form a lower part electrode. Next, silicon crystalline particles are grown using chlorosilane as a precursor. At this time the nuclear growth of silicon on the polycrystalline silicon layer 26 rapidly advances while the etching away speed of silicon by HCl is slower than that of HSG-Si structure but the silicon nuclear growth on the silicon oxide layers 24 takes a long time thereby raking the formation of the HSG-Si structure selectable.

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