公开(公告)号：WO2010092399A2

公开(公告)日：2010-08-19

申请号：PCT/GB2010/050233

申请日：2010-02-12

Applicant: Wolfson Microelectronics plc ,  TRAYNOR, Anthony ,  RANKIN, Neil Sinclair ,  JENKINS, Colin Roberts ,  HOEKSTRA, Tsjerk ,  LAMING, Richard

Inventor： TRAYNOR, Anthony ,  RANKIN, Neil Sinclair ,  JENKINS, Colin Roberts ,  HOEKSTRA, Tsjerk ,  LAMING, Richard

CPC classification number: B81C1/00246 ,  B81B2201/0257 ,  H04R1/04 ,  H04R19/005 ,  H04R31/006

Abstract: The invention relates to the integration of MEMS transducers with electronic circuitry on the same substrate. A method of fabricating and integrated MEMS transducer and circuitry is disclosed which is fully compatible with standard CMOS processing and requires no post processing. The transducer is formed by forming at least one membrane layer, a plurality of back-plate layer sand at least one sacrificial structure such that removal of the sacrificial structure leaves the membrane free to move relative to the fixed back-plate. The method also forms circuit layers on the substrate to form the circuit components and involves sharing layers of material such that at least some of the layers which form the back-plate of the transducer also forms one of the circuit layer sand such layer include at least one metal layer and at least one dielectric layer. The method thus reduces the number of processing steps required compared with sequential fabrication of the circuitry and the transducer. Integrated transducer and electronics devices are also taught.

Abstract translation: 本发明涉及MEMS换能器与同一基板上的电子电路的集成。 公开了一种制造和集成MEMS换能器和电路的方法，其与标准CMOS处理完全兼容，并且不需要后处理。 换能器通过形成至少一个膜层，多个背板层砂形成至少一个牺牲结构而形成，使得去除牺牲结构离开膜相对于固定背板自由移动。 该方法还在衬底上形成电路层以形成电路部件并涉及共享材料层，使得形成换能器的背板的至少一些层也形成电路层砂之一，至少包括 一个金属层和至少一个电介质层。 该方法因此减少了与电路和换能器的顺序制造相比所需的处理步骤的数量。 还教授了集成的传感器和电子设备。

公开(公告)号：WO2007096636A1

公开(公告)日：2007-08-30

申请号：PCT/GB2007/000636

申请日：2007-02-23

Applicant: WOLFSON MICROELECTRONICS PLC. ,  LAMING, Richard, Ian ,  TRAYNOR, Anthony

Inventor： LAMING, Richard, Ian ,  TRAYNOR, Anthony

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/0027 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C1/00904 ,  B81C2201/056 ,  G01L9/0073 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04

Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11 ); depositing a first electrode (15) that is operably coupled with the electronic circuit (11 ); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11 ) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

Abstract translation: 在基板（10）上制造微机电系统（MEMS）装置的方法包括以下步骤：处理基板（10）以制造电子电路（11）; 沉积与电子电路（11）可操作耦合的第一电极（15）; 沉积膜（16），使得其机械耦合到第一电极（15）; 施加牺牲层（50）; 沉积与电子电路（11）可操作地耦合的结构层（18）和第二电极（17），使得牺牲层（50）设置在膜（16）和结构层（18）之间，以便 形成初步结构; 单片基板（10）; 以及去除所述牺牲层以形成MEMS结构，其中在去除所述牺牲层（50）的步骤之前执行对所述衬底（10）进行单分割的步骤。

公开(公告)号：WO2007107736A2

公开(公告)日：2007-09-27

申请号：PCT/GB2007/000972

申请日：2007-03-20

Applicant: WOLFSON MICROELECTRONICS PLC ,  LAMING, Richard Ian ,  BEGBIE, Mark ,  TRAYNOR, Anthony

Inventor： LAMING, Richard Ian ,  BEGBIE, Mark ,  TRAYNOR, Anthony

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C99/004 ,  B81C2201/0109 ,  H04R7/10 ,  H04R7/18 ,  H04R19/005 ,  H04R2307/207 ,  Y10S977/733

Abstract: A MEMS device, for example a capacitive microphone, comprises a flexible membrane 11 that is free to move in response to pressure differences generated by sound waves. A first electrode 13 is mechanically coupled to the flexible membrane 11 , and together form a first capacitive plate of the capacitive microphone device. A second electrode 23 is mechanically coupled to a generally rigid structural layer or back-plate 14, which together form a second capacitive plate of the capacitive microphone device. The capacitive microphone is formed on a substrate 1 , for example a silicon wafer. A back- volume 33 is provided below the membrane 11 , and is formed using a "back-etch" through the substrate 1. A first cavity 9 is located directly below the membrane 11 , and is formed using a first sacrificial layer during the fabrication process. Interposed between the first and second electrodes 13 and 23 is a second cavity 17, which is formed using a second sacrificial layer during the fabrication process. A plurality of bleed holes 15 connect the first cavity 9 and the second cavity 17. Acoustic holes 31 are arranged in the back-plate 14 so as to allow free movement of air molecules, such that the sound waves can enter the second cavity 17. The first and second cavities 9 and 17 in association with the back-volume 33 allow the membrane 11 to move in response to the sound waves entering via the acoustic holes 31 in the back-plate 14. The provision of first and second sacrifjciaj layers has the advantage of protecting the membrane during manufacture, and disassociating the back etch process from the definition of the membrane. The bleed holes 15 aid with the removal of the first and second sacrificial layers. The bleed holes 15 also contribute to the operating characteristics of the microphone.

Abstract translation: MEMS器件，例如电容麦克风，包括响应于由声波产生的压力差而自由移动的柔性膜11。 第一电极13机械耦合到柔性膜11，并且一起形成电容式麦克风装置的第一电容板。 第二电极23机械地耦合到大致刚性的结构层或背板14，它们一起形成电容式麦克风装置的第二电容板。 电容麦克风形成在基板1上，例如硅晶片。 背部体积33设置在膜11的下方，并且通过基底1的“背蚀刻”形成。第一腔9位于膜11的正下方，并且在制造期间使用第一牺牲层形成 处理。 介于第一和第二电极13和23之间的是第二腔17，其在制造过程中使用第二牺牲层形成。 多个排放孔15连接第一腔9和第二腔17.声孔31布置在背板14中，以便允许空气分子的自由运动，使得声波可以进入第二腔17。 与背部体积33相关联的第一和第二腔9和17允许膜11响应于通过背板14中的声孔31进入的声波而移动。提供第一和第二牺牲层具有 在制造过程中保护膜的优点，以及使背蚀刻工艺与膜的定义分离。 排出孔15有助于去除第一和第二牺牲层。 排放孔15也有助于麦克风的操作特性。

公开(公告)号：EP1993948A1

公开(公告)日：2008-11-26

申请号：EP07705267.8

申请日：2007-02-23

Applicant: Wolfson Microelectronics plc

Inventor： LAMING, Richard, Ian ,  TRAYNOR, Anthony

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/0027 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C1/00904 ,  B81C2201/056 ,  G01L9/0073 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04

Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11 ); depositing a first electrode (15) that is operably coupled with the electronic circuit (11 ); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11 ) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

公开(公告)号：EP1996507B1

公开(公告)日：2015-03-04

申请号：EP07732064.6

申请日：2007-03-20

Applicant: Wolfson Microelectronics plc

Inventor： LAMING, Richard Ian ,  BEGBIE, Mark ,  TRAYNOR, Anthony

IPC: B81C99/00 ,  H04R7/18 ,  H04R19/00 ,  B81C1/00 ,  H04R7/10

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C99/004 ,  B81C2201/0109 ,  H04R7/10 ,  H04R7/18 ,  H04R19/005 ,  H04R2307/207 ,  Y10S977/733

公开(公告)号：EP1996507A2

公开(公告)日：2008-12-03

申请号：EP07732064.6

申请日：2007-03-20

Applicant: Wolfson Microelectronics plc

Inventor： LAMING, Richard Ian ,  BEGBIE, Mark ,  TRAYNOR, Anthony

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C99/004 ,  B81C2201/0109 ,  H04R7/10 ,  H04R7/18 ,  H04R19/005 ,  H04R2307/207 ,  Y10S977/733

Abstract: A MEMS device, for example a capacitive microphone, comprises a flexible membrane (11) that is free to move in response to pressure differences generated by sound waves. A first electrode (13) is mechanically coupled to the flexible membrane (11), and together form a first capacitive plate of the capacitive microphone device. A second electrode (23) is mechanically coupled to a generally rigid structural layer or back-plate (14), which together form a second capacitive plate of the capacitive microphone device. The capacitive microphone is formed on a substrate (1), for example a silicon wafer. A back- volume (33) is provided below the membrane (11), and is formed using a 'back-etch' through the substrate (1). A first cavity (9) is located directly below the membrane (11), and is formed using a first sacrificial layer during the fabrication process. Interposed between the first and second electrodes (13 and 23) is a second cavity (17), which is formed using a second sacrificial layer during the fabrication process. A plurality of bleed holes (15) connect the first cavity (9) and the second cavity (17). Acoustic holes (31) are arranged in the back-plate (14) so as to allow free movement of air molecules, such that the sound waves can enter the second cavity (17). The first and second cavities (9 and 17) in association with the back-volume (33) allow the membrane (11) to move in response to the sound waves entering via the acoustic holes (31) in the back-plate (14). The provision of first and second sacrifjciaj layers has the advantage of protecting the membrane during manufacture, and disassociating the back etch process from the definition of the membrane. The bleed holes (15) aid with the removal of the first and second sacrificial layers. The bleed holes (15) also contribute to the operating characteristics of the microphone.