公开(公告)号：US20250038056A1

公开(公告)日：2025-01-30

申请号：US18419128

申请日：2024-01-22

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Yusheng Lin

IPC: H01L23/13 ,  H01L23/00

Abstract: Semiconductor packages are provided. In one example, the semiconductor package includes a submount. The semiconductor package further includes a recess in the submount. The recess includes a bottom surface defining a recess plane. The recess further includes at least one stud protrusion extending from the recess plane. The semiconductor package further includes a semiconductor die on the at least one stud protrusion.

公开(公告)号：US20250038055A1

公开(公告)日：2025-01-30

申请号：US18358616

申请日：2023-07-25

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman

IPC: H01L23/13 ,  H01L23/00 ,  H01L23/495

Abstract: Semiconductor packages are provided. In one example, a semiconductor package includes a submount. The semiconductor package further includes a semiconductor die on the submount. The submount defines a base plane, and the submount includes at least one stud protrusion extending from the base plane in a direction toward the semiconductor die.

公开(公告)号：US20240258217A1

公开(公告)日：2024-08-01

申请号：US18161144

申请日：2023-01-30

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49582 ,  H01L21/4821 ,  H01L23/49513 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L23/293 ,  H01L23/296 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/73265 ,  H01L2924/10272

Abstract: A semiconductor device package includes a conductive submount, a metal layer comprising a first material on the conductive submount, and at least one conductive buffer layer comprising a second material on the metal layer. The conductive buffer layer may be between the metal layer and the conductive submount, or may be between the metal layer and a transistor die on the conductive submount. The second material of the conductive buffer layer has limited or no solid solubility with respect to the first material of the metal layer. Related packages and fabrication techniques are also discussed.

公开(公告)号：US20240421044A1

公开(公告)日：2024-12-19

申请号：US18336376

申请日：2023-06-16

Applicant: Wolfspeed, Inc.

Inventor： Daniel Ginn Richter ,  Afshin Dadvand

IPC: H01L23/495 ,  H01L21/52

Abstract: Semiconductor packages are provided. In one example, a semiconductor package includes a submount and a semiconductor die attached to the submount using a die-attach material. The semiconductor die includes a sidewall having at least one fillet reduction feature. The at least one fillet reduction feature is configured to limit a fillet height of the die-attach material along the sidewall of the semiconductor die.

公开(公告)号：US20240182757A1

公开(公告)日：2024-06-06

申请号：US18074079

申请日：2022-12-02

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman

IPC: C09J9/02 ,  C09J1/00 ,  H01L23/00

CPC classification number: C09J9/02 ,  C09J1/00 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29324 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29457 ,  H01L2224/29464 ,  H01L2224/2948 ,  H01L2224/29484 ,  H01L2224/32225 ,  H01L2224/32503

Abstract: Die-attach materials are provided. In one example, the die-attach material may include a plurality of core-shell particles. Each core-shell particle may include a core and a shell on the core. The core may include a conducting material. The shell may include an alloy. The alloy may include a first element and a second element. The second element may segregate into one or more grain boundaries in the die-attach material during bonding of the die-attach material.

公开(公告)号：US20250122413A1

公开(公告)日：2025-04-17

申请号：US18487665

申请日：2023-10-16

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman ,  Kuldeep Saxena

IPC: C09J179/08 ,  C09J9/02 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

Abstract: Semiconductor device packages are provided. In one example, a semiconductor device package comprises a first structure having a first surface in the semiconductor device package, a second structure having a second surface in the semiconductor device package, and an adhesion promoting layer in contact with the first surface on a first side and the second surface on a second side. The adhesion promoting layer comprises a polyimide containing repeating units derived from a tetracarboxylic dianhydride and at least one diamine containing a functional group.

公开(公告)号：US20240282741A1

公开(公告)日：2024-08-22

申请号：US18169518

申请日：2023-02-15

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/29 ,  H01L23/49582 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/2979 ,  H01L2224/29847 ,  H01L2224/29987 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2924/182

Abstract: Die attach materials are provided. In one example, the die-attach material includes a plurality of core-shell particles. Each core-shell particle includes a core and a shell on the core. The core includes a conducting material. The shell includes a metal nitride.

公开(公告)号：US20250125231A1

公开(公告)日：2025-04-17

申请号：US18488284

申请日：2023-10-17

Applicant: Wolfspeed, Inc.

Inventor： Devarajan Balaraman ,  Afshin Dadvand ,  Daniel Ginn Richter

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/065

Abstract: Semiconductor device packages are provided. In one example, the semiconductor device package includes a semiconductor die. The semiconductor die includes a wide bandgap semiconductor material. The semiconductor die includes a metallization layer on a surface of the semiconductor die. The semiconductor device package includes a submount. The metallization of the semiconductor die is directly bonded to the submount.

公开(公告)号：US20250105196A1

公开(公告)日：2025-03-27

申请号：US18475370

申请日：2023-09-27

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Daniel Ginn Richter ,  Devarajan Balaraman

IPC: H01L23/00

Abstract: Die-attach materials for semiconductor device packages are provided. In one example, a semiconductor device package includes a submount. The semiconductor device package includes a semiconductor die comprising a wide bandgap semiconductor. The semiconductor device package includes a die-attach layer between the submount and the semiconductor die. The die-attach layer comprises gold (Au), tin (Sn), and cobalt (Co).

公开(公告)号：US20240355738A1

公开(公告)日：2024-10-24

申请号：US18304869

申请日：2023-04-21

Applicant: Wolfspeed, Inc.

Inventor： Afshin Dadvand ,  Devarajan Balaraman

IPC: H01L23/532 ,  H01L23/00 ,  H01L23/29 ,  H01L29/45

CPC classification number: H01L23/53219 ,  H01L23/291 ,  H01L23/293 ,  H01L23/53233 ,  H01L24/05 ,  H01L24/08 ,  H01L24/48 ,  H01L29/452 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/08113 ,  H01L2224/48245 ,  H01L2924/01004 ,  H01L2924/12032 ,  H01L2924/13064 ,  H01L2924/13091

Abstract: Semiconductor devices and methods are provided. In one example, a semiconductor device includes an active region comprising one or more active semiconductor cells. The semiconductor device includes a metallization structure on the active region. The metallization structure includes beryllium.