Abstract:
A bolometer which is adapted for a wide-band of radiation including soft adiation, and in which the sensitivity of the time constant (the heat flow from the absorber layer to the dissipator layer) can be exactly preselected without regard to the wave length of the radiation. The bolometer includes an electrically insulating carrier foil which has mounted thereon an absorber layer on one side thereof and a resistance layer on the opposite side of the foil, the resistance layer being part of a resistance measuring bridge. A thermally conductive layer is placed between the absorber layer and the carrier foil. The thermally conductive layer has portions protruding beyond the absorber layer. A heat dissipator is in thermally conductive contact with the protruding portions of the thermally conductive layer to dissipate the heat of the absorber layer. The laterally protruding portions of the thermally conductive layer in contact with the heat dissipator are shielded against the radiation to be measured.
Abstract:
Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.
Abstract:
A thermal detector of the type comprising an array of discrete detector elements each of which is supported by a common supportive layer, each of which is provided in thermal contact with a corresponding collector of radiation absorbent material, the area of each collector being larger than the area of the corresponding detector element, characterized in that contact between each collector and the supportive layer is restricted to an area lying substantially within and displaced from the edge periphery of said collector.
Abstract:
The invention relates to a radiation sensor array (21), comprising a radiation sensor (2), comprising a cantilevered element (5), which comprises an optical absorber (6) and a resistance structure (3), and a holding structure (4) that holds the cantilevered element (5) at a distance to a substrate (1), and which represents a connection between the cantilevered element (5) and the substrate (1), and comprising an evaluation unit for detecting an absorbed radiation from the change of an electrical resistance of the resistance structure (3), characterized by a wavelength-selective design of the optical absorber (6).
Abstract:
Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.
Abstract:
An electromagnetic wave detection element has: an electromagnetic wave detection portion; a conductive layer that is electrically connected to the electromagnetic wave detection portion; a conductive pillar having an end surface that is electrically connected to the conductive layer, wherein the end surface includes an inner region that is in contact with the conductive layer and an outer region that is positioned outside the inner region; and a dielectric layer that is positioned between at least a part of the outer region and the conductive layer.
Abstract:
A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.