公开(公告)号：US08563942B2

公开(公告)日：2013-10-22

申请号：US12780551

申请日：2010-05-14

Applicant: Elmar Platzgummer

Inventor： Elmar Platzgummer

IPC: G01T1/08 ,  H01J3/14

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0437

Abstract: The invention relates to a multi-beam deflector array means for use in a particle-beam exposure apparatus employing a beam of charged particles, said multi-beam deflector array means having an overall plate-like shape with a membrane region and a buried CMOS-layer, said membrane region comprising a first side facing towards the incoming beam of particles and a second side opposite to the first side, an array of apertures, each aperture allowing passage of a corresponding beam element formed out of said beam of particles, and an array of electrodes, each aperture being associated with at least one of said electrodes and the electrodes being controlled via said CMOS layer, wherein the electrodes are pillared, standing proud of the main body of the multi-beam deflector array means, the electrodes being connected to one side of the main body of the multi-beam deflector array means by means of bonding connections.

Abstract translation: 本发明涉及一种用于使用带电粒子束的粒子束曝光设备的多光束偏转器阵列装置，所述多光束偏转器阵列装置具有总体板状形状，其具有膜区域和掩埋的CMOS- 所述膜区域包括面向入射入射束的第一侧和与第一侧相对的第二侧，孔阵列，每个孔允许通过由所述粒子束形成的对应的束元件，以及 电极阵列，每个孔与所述电极中的至少一个相关联，并且电极通过所述CMOS层进行控制，其中所述电极被支柱，对于多光束偏转器阵列装置的主体站立，电极被连接 通过粘合连接到多光束偏转器阵列装置的主体的一侧。

公开(公告)号：US08368015B2

公开(公告)日：2013-02-05

申请号：US11990067

申请日：2006-08-08

Applicant: Elmar Platzgummer ,  Gerhard Stengl ,  Helmut Falkner

Inventor： Elmar Platzgummer ,  Gerhard Stengl ,  Helmut Falkner

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

Abstract translation: 多子束多列粒子光学系统技术领域本发明涉及一种多子束多列粒子光学系统，该多子束多列粒子光学系统包括多个列，其被布置成阵列以同时暴露衬底，每个列具有光轴，并且包括：子束产生装置，其包括至少一个 用于产生多个带电粒子束的图案的多孔板，以及包括至少一个电极元件的静电透镜装置; 所述至少一个电极元件具有由面向光轴的内周边缘限定的孔，所述孔在与所述光轴正交的平面中具有中心和预定形状; 其中在所述多个列中的至少一个列中，所述孔的预定形状是非圆形形状，其具有围绕所述孔的中心的来自理想圆的突起和凹陷中的至少一个。

公开(公告)号：US08278635B2

公开(公告)日：2012-10-02

申请号：US12708737

申请日：2010-02-19

Applicant: Elmar Platzgummer ,  Heinrich Fragner ,  Stefan Cernusca

Inventor： Elmar Platzgummer ,  Heinrich Fragner ,  Stefan Cernusca

IPC: H01J3/26

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

Abstract: In a particle multi-beam structuring apparatus for forming a pattern on a target's surface using a beam of electrically charged particles, during exposure steps the particle beam is produced, directed through a pattern definition means producing a patterned particle beam composed of multiple beamlets, and projected by an optical column including a controllable deflection means onto the target surface to form, at a nominal location on the target, a beam image comprising the image of defining structures in the pattern definition means. The beam image's nominal location relative to the target is changed between exposure steps. The actual location of the beam image is varied within each exposure step around the nominal location, through a set of locations realizing a distribution of locations within the image plane around a mean location coinciding with the nominal location, thus introducing an additional blur which is homogenous over the entire beam image.

Abstract translation: 在用于使用带电粒子束在目标表面上形成图案的粒子多光束结构装置中，在曝光步骤期间，通过产生由多个子束组成的图案化粒子束的图案定义装置产生粒子束，并且 通过包括可控偏转装置的光学柱被投影到目标表面上，以在目标的标称位置处形成包括图案定义装置中的限定结构的图像的光束图像。 相对于目标的光束图像的标称位置在曝光步骤之间改变。 射束图像的实际位置在标称位置周围的每个曝光步骤内通过一组位置实现，该位置实现在与标称位置重合的平均位置周围的图像平面内的位置的分布，从而引入均匀的附加模糊 在整个光束图像上。

公开(公告)号：US08258488B2

公开(公告)日：2012-09-04

申请号：US12535744

申请日：2009-08-05

Applicant: Elmar Platzgummer ,  Heinrich Fragner ,  Stefan Cernusca

Inventor： Elmar Platzgummer ,  Heinrich Fragner ,  Stefan Cernusca

IPC: A61N5/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  G03F1/20 ,  G03F7/70433 ,  H01J37/3174

Abstract: An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.

Abstract translation: 用于在靶上限定图案的装置中的改进的孔布置，用于粒子束曝光装置，通过照射带电粒子束并允许光束仅通过多个孔。 该装置包括孔阵列，该孔阵列具有多个相同形状的孔，限定穿透孔的子束的形状和相对位置。 消隐装置关闭穿过孔并由它们限定的选定子束的通过。 根据通过小偏差偏离规则排列的布置，孔径布置在孔阵列上，调整由粒子束曝光装置引起的变形，并且孔径阵列的孔径的大小沿孔径阵列依次不同 以允许通过孔和相应的开口调节在靶上辐射的电流。

公开(公告)号：US20100252733A1

公开(公告)日：2010-10-07

申请号：US12770904

申请日：2010-04-30

Applicant: Elmar Platzgummer

Inventor： Elmar Platzgummer

IPC: H01J37/20 ,  H01J37/317

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J2237/30483

Abstract: For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.

Abstract translation: 对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置（v）相对于轴线横向移动（v）的目标， 对于像素曝光期间，图像的位置与目标一起移动，在该像素曝光期间，覆盖目标的相对运动的距离，该距离至少是孔径图像的宽度（w）的倍数， 目标，并且在所述像素曝光周期之后，光束图像的位置改变，位置的变化通常补偿光束图像的位置的整体移动。

公开(公告)号：US20080237460A1

公开(公告)日：2008-10-02

申请号：US12051087

申请日：2008-03-19

Applicant: Heinrich Fragner ,  Elmar Platzgummer

Inventor： Heinrich Fragner ,  Elmar Platzgummer

IPC: G01N23/00 ,  G21K5/10

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J2237/30483

Abstract: For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.

Abstract translation: 对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置（v）相对于轴线横向移动（v）的目标， 对于像素曝光期间，图像的位置与目标一起移动，在该像素曝光期间，覆盖目标的相对运动的距离，该距离至少是孔径图像的宽度（w）的倍数， 目标，并且在所述像素曝光周期之后，光束图像的位置改变，位置的变化通常补偿光束图像的位置的整体移动。

公开(公告)号：US07368738B2

公开(公告)日：2008-05-06

申请号：US11119514

申请日：2005-04-29

Applicant: Elmar Platzgummer

Inventor： Elmar Platzgummer

IPC: G21K1/087

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/045 ,  H01J37/3174 ,  H01J2237/31774

Abstract: In a pattern definition device for use in a particle-beam exposure apparatus a plurality of blanking openings (910) are arranged within a pattern definition field (bf) composed of a plurality of staggered lines (bl) of blanking openings, each provided with a deflection means controllable by a blanking signal (911); for the lines of blanking openings, according to a partition of the blanking openings of a line into several groups (g4,g5,g6), the deflection means of the blanking openings of each group are fed a common group blanking signal (911), and the group blanking signal of each group of a line is fed to the blanking means and connected to the respective blanking openings independently of the group blanking signals of the other groups of the same line.

Abstract translation: 在用于粒子束曝光装置的图案定义装置中，多个消隐开口（910）布置在由多个消隐开口的交错线（b1）构成的图案定义区域（bf）内，每个设置有一个 偏移装置可由消隐信号（911）控制; 对于消隐开口的线，根据将线的消隐开口划分成若干组（g 4，g 5，g 6），每组的消隐开口的偏转装置被馈送到公共组消隐信号（ 911），并且每组一组的组消隐信号被馈送到消隐装置并且独立于同一行的其他组的组消隐信号连接到各个消隐开口。

公开(公告)号：US07276714B2

公开(公告)日：2007-10-02

申请号：US11119025

申请日：2005-04-29

Applicant: Elmar Platzgummer ,  Stefan Cernusca

Inventor： Elmar Platzgummer ,  Stefan Cernusca

IPC: G21K6/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/045 ,  H01J37/3174 ,  H01J2237/31774

Abstract: In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

Abstract translation: 在用于粒子束处理装置的图案定义装置中，多个孔（21）布置在图案定义区（pf）内，其中，图案定义区（pf）中的孔（21）的位置与 垂直于或平行于扫描方向的方向（X，Y）不仅通过沿着所述方向所取的孔的有效宽度（w）的多个整数而彼此偏移，而且也是整数的多个整数 所述有效宽度的分数。 图案定义字段（pf）可以被分割成由许多交错的线（pl）组成的几个域（D）; 沿着与扫描方向垂直的方向，域的孔径相互偏移有效宽度（w）的多个整数，而不同域的孔的偏移量是该宽度的整数分数。

公开(公告)号：US20050201246A1

公开(公告)日：2005-09-15

申请号：US11080578

申请日：2005-03-15

Applicant: Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

Inventor： Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

IPC: H01L21/027 ,  G03F7/20 ,  G11B7/09 ,  H01J37/02 ,  H01J37/147 ,  H01J37/15 ,  H01J37/20 ,  H01J37/21 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/10 ,  H01J2237/216 ,  H01J2237/30455

Abstract: In a particle-optical projection system (32) a pattern (B) is imaged onto a target (tp) by means of energetic electrically charged particles. The pattern is represented in a patterned beam (pb) of said charged particles emerging from the object plane through at least one cross-over (c); it is imaged into an image (S) with a given size and distortion. To compensate for the Z-deviation of the image (S) position from the actual positioning of the target (tp) (Z denotes an axial coordinate substantially parallel to the optical axis cx), without changing the size of the image (S), the system comprises a position detection means (ZD) for measuring the Z-position of several locations of the target (tp), a control means (33) for calculating modifications (cr) of selected lens parameters of the final particle-optical lens (L2) and controlling said lens parameters according to said modifications.

Abstract translation: 在粒子光学投影系统（32）中，通过能量带电粒子将图案（B）成像到目标（tp）上。 所述图案通过至少一个交叉（c）从所述物体平面出射的所述带电粒子的图案化束（pb）中表示; 它被成像为具有给定大小和失真的图像（S）。 为了补偿图像（S）位置与目标的实际定位（tp）（Z表示基本上平行于光轴cx的轴向坐标）的Z偏差，而不改变图像（S）的尺寸， 该系统包括用于测量目标（tp）的若干位置的Z位置的位置检测装置（ZD），用于计算最终粒子光学透镜的选定透镜参数的修改（cr）的控制装置（33） L 2），并根据所述修改来控制所述透镜参数。

公开(公告)号：US08198601B2

公开(公告)日：2012-06-12

申请号：US12692679

申请日：2010-01-25

Applicant: Elmar Platzgummer ,  Heinrich Fragner

Inventor： Elmar Platzgummer ,  Heinrich Fragner

IPC: H01J37/147

CPC classification number: H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J2237/0437

Abstract: The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.

Abstract translation: 本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法，所述多光束偏转器阵列器件用于粒子束曝光设备，特别是投影光刻系统，所述方法从CMOS晶片开始，并且包括以下步骤： 至少一对平行的沟槽在晶片坯料的第一侧上，在下面的电路层不起作用的区域的边缘处，沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中，从而产生用作电极的填充材料柱; 将金属接触装置附接到电极的顶部; 构造电极之间的开口，所述开口延伸穿过上述区域，使得列在开口的侧壁上彼此相对布置。