Abstract:
The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).
Abstract:
When using micro-resonant structures, it is possible to use the same source of charged particles to cause multiple resonant structures to emit electromagnetic radiation. This reduces the number of sources that are required for multi-element configurations, such as displays with plural rows (or columns) of pixels. In one such embodiment, at least one deflector is placed in between first and second resonant structures. After the beam passes by at least a portion of the first resonant structure, it is directed to a path such that it can be directed towards the second resonant structure. The amount of deflection needed to direct the beam toward the second resonant structure is based on the amount of deflection, if any, that the beam underwent as it passed by the first resonant structure. This process can be repeated in series as necessary to produce a set of resonant structures in series.
Abstract:
The invention concerns a semiconductor device with vertical electronic injection comprising a support substrate (2), a structure including at least a thin monocrystalline film (7) transferred onto the support substrate and integral with the support substrate, at least an electronic component, the support substrate (2) comprising at least a recess for electrical or electronic access to the electronic component through the thin monocrystalline film, the device further comprising means (13, 14) for vertical electronic injection into the electronic component.
Abstract:
When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.
Abstract:
When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.
Abstract:
When using micro-resonant structures, it is possible to use the same source of charged particles to cause multiple resonant structures to emit electromagnetic radiation. This reduces the number of sources that are required for multi-element configurations, such as displays with plural rows (or columns) of pixels. In one such embodiment, at least one deflector is placed in between first and second resonant structures. After the beam passes by at least a portion of the first resonant structure, it is directed to a path such that it can be directed towards the second resonant structure. The amount of deflection needed to direct the beam toward the second resonant structure is based on the amount of deflection, if any, that the beam underwent as it passed by the first resonant structure. This process can be repeated in series as necessary to produce a set of resonant structures in series.
Abstract:
The present invention relates to a semiconductor device with vertical electron injection, comprising a support substrate (2), a structure comprising at least one monocrystalline thin film (7) transferred onto the support substrate and integral with the support substrate, and at least one electronic component, the support substrate (2) comprising at least one recess enabling electric or electronic access to the electronic component, through the monocrystalline thin film, the device also comprising means (13, 14) enabling vertical electron injection into the electronic component.