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    3.
    发明专利
    失效

    公开(公告)号：JP2002500407A

    公开(公告)日：2002-01-08

    申请号：JP2000526828

    申请日：1998-12-04

    IPC: H01F7/02 ,  H01J3/24 ,  H01J23/087 ,  H01J37/14 ,  H05H7/04 ,  H05H9/02

    Abstract: In accordance with the present invention, there is provided a method of profiling a total vector potential field of a periodic permanent magnetic field structure, wherein desired elements of the total vector potential field are known. The magnetic field structure comprises a plurality of magnets having individual vector potential fields which collectively form the total vector potential field. The method provides for using an electromagnetic solver to generate data files representative of each individual magnet's contribution to the total vector potential field. Such data files are generated by assuming a magnetization value of one unit for a selected magnet, setting magnetization values of zero for all other magnets, setting the electromagnetic solver to use high resolution proximate the selected magnet and to use low resolution elsewhere, using the electromagnetic solver to compute the individual vector potential fields for all space for which the total vector potential field is to be profiled, and repeating such steps for each magnet of the plurality of magnets to generate the data files. The method further provides for using the data files to determine magnetization values for each magnet necessary to provide the desired elements of the total vector potential field, and using the determined magnetization values to superimpose the individual vector potential fields to determine the total vector potential field.

    5.
    发明专利
    失效

    公开(公告)号：JPS5741061B2

    公开(公告)日：1982-09-01

    申请号：JP3219375

    申请日：1975-03-19

    IPC: H01J37/14 ,  H01J3/24 ,  H01J37/143

    ELECTRON LENS AND THE ELECTRON BEAM DEVICE
    7.
    发明申请
    ELECTRON LENS AND THE ELECTRON BEAM DEVICE 审中-公开
    电子镜头和电子束装置

    公开(公告)号：US20140252245A1

    公开(公告)日：2014-09-11

    申请号：US14271940

    申请日：2014-05-07

    Applicant: PARAM CORPORATION

    Inventor： Hiroshi Yasuda

    IPC: H01J37/143 ,  H01J37/30 ,  H01J37/317 ,  H01J3/24

    CPC classification number: H01J3/24 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/20 ,  H01J37/143 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/1405

    Abstract: There provided a device for effectively drawing a fine pattern using a permanent magnet. The device has an outer cylinder 201 composed of a cylindrical ferromagnet with a Z axis as a central axis, a cylindrical permanent magnet 202 located inside the outer cylinder and polarized along the Z axis direction, a correction coil 204 located inside the cylindrical permanent magnet with a gap from the cylindrical permanent magnet, for adjusting a magnetic field strength generated by the cylindrical permanent magnet along the Z axis direction, and a coolant passage 203 located in the gap between the cylindrical permanent magnet and the correction coil, for allowing a coolant to flow therethrough and controlling temperature changes in the cylindrical permanent magnet.

    Abstract translation: 提供了一种用于使用永磁体有效地绘制精细图案的装置。 该装置具有由Z轴作为中心轴的圆柱形铁磁体构成的外筒201，位于外筒内部并沿着Z轴方向极化的圆柱形永磁体202，位于筒状永久磁铁内部的校正线圈204， 用于调整由圆柱形永磁体沿Z轴方向产生的磁场强度的圆柱形永磁体的间隙和位于圆柱形永磁体和校正线圈之间的间隙中的冷却剂通道203，用于允许冷却剂 流过其中并控制圆筒形永磁体的温度变化。

    Electron source with grid spacer
    8.
    发明授权
    Electron source with grid spacer 失效
    带栅格间隔的电子源

    公开(公告)号：US5861712A

    公开(公告)日：1999-01-19

    申请号：US675552

    申请日：1996-07-03

    Applicant: John Beetson ,  Andrew Knox

    Inventor： John Beetson ,  Andrew Knox

    IPC: B41J2/447 ,  G09G1/20 ,  H01J3/24 ,  H01J29/46 ,  H01J29/68

    CPC classification number: H01J29/68 ,  B41J2/4476 ,  G09G1/20 ,  H01J29/46 ,  H01J3/24 ,  H01J2329/00

    Abstract: An electron source having a cathode and a permanent magnet perforated by a plurality of channels extending between opposite poles thereof. The magnet generates, in each channel, a magnetic field which forms electrons received from the cathode into an electron beam for guidance towards a target. An electrode grid is disposed between the cathode and the magnet for controlling flow of electrons from the cathode into each channel. A magnetic field null region of each magnetic field is positioned at a location remote from the electrode grid. Because the null region is positioned remotely from the grid electrodes, flow of electrons can be improved without increasing electrode drive voltage.

    Abstract translation: 电子源具有阴极和永久磁铁，该多个通道在其相对极之间延伸。 在每个通道中，磁体产生形成从阴极接收的电子到电子束的磁场，用于向目标引导。 电极栅格设置在阴极和磁体之间，用于控制电子从阴极到每个通道的流动。 每个磁场的磁场零区域位于远离电极栅格的位置。 因为零区域远离栅格电极，所以可以在不增加电极驱动电压的情况下改善电子流。

    Method and apparatus for broad beam ion implantation
    9.
    发明授权
    Method and apparatus for broad beam ion implantation 失效
    宽束离子注入的方法和装置

    公开(公告)号：US5126575A

    公开(公告)日：1992-06-30

    申请号：US693784

    申请日：1991-04-29

    Applicant: Nicholas R. White

    Inventor： Nicholas R. White

    IPC: C23C14/48 ,  H01J3/24 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/3171 ,  H01J2237/083

    Abstract: A single aperture ion source is used to produce a ribbon shaped ion beam through which a targer may be transported. At an aperture of the ion source the ion beam converges in a vertical direction and diverges in a horizontal direction. The ion beam is passed through the poles of an analyzing magnet. A waist of the ion beam in the vertical direction occurs at the analyzing magnet. The analyzing magnet causes the ion beam to converge in the horizontal direction. Immediately before the ion beam strikes the target, the ion beam is passed through a focussing magnet which renders the ion beam trajectories substantially parallel. Between the ion source and the target, the ion beam may be passed through one or more resolving slits, as necessary, to trim the ion beam and assure that a focused, uniform beam reached the target. At the target, the analyzing magnet projects an inverted image of the aperture of the ion source. Further, a cross section of the ion beam is in the shape of a ribbon, the length of the ribbon being wider than the target. Using a conveyer the target is passed through the ion beam resulting in a uniform implantation of ions.

    Abstract translation: 使用单个孔径离子源来生产带状离子束，通过该离子束可以传送调节器。 在离子源的孔径处，离子束在垂直方向上会聚并沿水平方向发散。 离子束通过分析磁体的磁极。 离子束在垂直方向上的腰围发生在分析磁铁上。 分析磁铁使离子束在水平方向上会聚。 在离子束撞击目标物体之前，离子束通过聚焦磁体，使得离子束轨迹基本上平行。 在离子源和靶之间，离子束可以根据需要通过一个或多个分解狭缝，以修整离子束，并确保聚焦的均匀光束到达靶。 在目标处，分析磁体投射离子源的孔的反转图像。 此外，离子束的横截面为带状，色带的长度比目标宽。 使用输送机，目标物通过离子束，导致离子的均匀注入。

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