Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
Abstract:
The present invention is a compound sliding seal unit of markedly reduced size and height dimensions which is employed as a discrete assembly for both the passage across and the at-will height adjustment of a mounted, rotatable shaft which extends from the atmospheric environment portion into the vacuum environmental portion of an ion implanter apparatus. The extended, rotatable shaft is typically fashioned as either a rotatable hollow tube or conduit (suitable for the passage of electrical components) and/or as a rotatable support suitable for the mounting of a pivotal scanning radial arm translation system. The manner of construction and the substantially reduced height dimensions of the compound sliding seal unit permits on-demand changes of height for the mounted, rotatable shaft which extends from the atmospheric environment and extends through the compound unit into the confined and limited spatial volume of a vacuum environment within a conventional ion implantation apparatus. The compound unit also allows the user to maintain a high vacuum within the vacuum environment despite the fact that the height of the feed-through member can be raised and lowered repeatedly at will. Its compact size frees space which can be used to extend the vacuum chamber for purposes such as a deep Faraday cup for beam measurement.
Abstract:
The present invention provides a windowframe magnet having an aligned array of paired bedstead coils in mirror symmetry can bend a high aspect ratio ribbon ion beam through angle of not less than about 45 degrees and not more than about 110 degrees, and can focus it through a resolving slot for mass analysis. The long transverse axis of the beam, which can exceed 50% of the bend radius, is aligned with the generated magnetic field. The array of paired bedstead coils provide tight control of the fringing fields, present intrinsically good field uniformity, and enable a manufacture of much lighter construction than other magnet styles conventionally in use in the ion implantation industry.Within the system of the present invention, the ribbon beam is refocused with low aberration to achieve high resolving power, which is of significant value in the ion implantation industry. System size is further reduced by using a small ion source and a quadrupole lens to collimate the beam after expansion and analysis. There is no fundamental limit to the aspect ratio of the beam that can be analyzed.
Abstract:
An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.
Abstract:
The present invention is an apparatus and multi-unit assembly which is able to achieve two different and highly desirable functions: A focusing of a charged particle beam; and a mass separation of desired ion species from unwanted ion species in traveling ion beams. The apparatus is a simply organized and easily manufactured article; is relatively light-weight and less expensive to make; and is easier to install, align, and operate than conventionally available devices.
Abstract:
The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.
Abstract:
Disclosed is an apparatus for the generation of large currents of negative ions for use in tandem accelerators, suitable for employment in ion implantation on an industrial production scale. The apparatus includes a high current positive ion source which is coupled to a charge exchange canal where a fraction of the positive ions are transformed into negative ions.
Abstract:
The invention is a unique and substantive improvement in ion source assemblies which is able to produce a ribbon-shaped ion beam having an arbitrarily chosen breadth dimension which is at least ten times greater [and often more than thirty times greater] than its thickness dimension, the breadth and thickness dimensions of the beam being normal (i.e., perpendicular) to the Z-axis direction of travel for the ion beam. In all its embodiments, the improved ion source will comprise not less than two discrete component parts: (i) A closed, solid wall, prism-shaped arc discharge chamber having limited width and depth dimensions, and which concurrently has an arbitrarily chosen and predetermined length dimension which can be as small as 80 millimeters and alternatively exceed 3,000 millimeters in size; and (ii) A primary electron trap assembly which comprises at least an adjacently located magnetic field generating yoke subassembly able to provide a discernible quadrupole magnetic field internally within a confined cavity volume existing within the measurable dimensions of the arc discharge chamber walls.
Abstract:
This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.
Abstract:
In system for implanting workpieces with an accurately parallel scanned ion beam, a fine-control collimator construct is used to reduce the deviation of the scanned ion beam from a specified axis of parallelism and thereby improve its collimation. The shape of the fine-control collimator matches the ribbon shape of the beam and correction of parallelism in two orthogonal directions is possible. Measurement of the non-parallelism is accomplished by sampling the scanned beam in two planes and comparing timing information; and such measurement is calibrated to the orientation of the workpiece in the plane where ion implantation occurs. Measurement of non-uniformity in the doping profile is accomplished using the same means; and the scan waveform is adjusted to substantially remove any non-uniformity in the doping profile.