公开(公告)号：US09704784B1

公开(公告)日：2017-07-11

申请号：US15209964

申请日：2016-07-14

Applicant: Freescale Semiconductor, Inc.

Inventor： Matthieu Lagouge ,  Qing Zhang ,  Mohommad Choudhuri ,  Gul Zeb

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/768 ,  H01L21/288 ,  H01L23/532 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L23/481 ,  H01L21/2885 ,  H01L21/3065 ,  H01L21/32134 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/53238

Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

公开(公告)号：US09586812B2

公开(公告)日：2017-03-07

申请号：US14682282

申请日：2015-04-09

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Matthieu Lagouge ,  Mamur Chowdhury

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0074 ,  B81B7/0006 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00301 ,  G01P15/0802 ,  G01P15/125

Abstract: A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.

Abstract translation: 一种装置包括感测不同物理刺激的垂直和横向间隔的传感器。 装置的制造需要形成具有第一和第二晶片层的器件结构，其间插入有信号布线层。 一个或多个传感器的主动传感器元件形成在第一晶片层中，并且第三晶片层与第二晶片层连接以产生其中有源换能器元件所在的一个或多个空腔。 沟槽延伸穿过第二晶片并且穿过信号路由层的一部分。 沟槽将由沟槽围绕的第二晶片层的区域与第二晶片层的其余部分电隔离。 另一传感器的另一个有源传感器元件形成在该区域。 形成在第二晶片层中的换能器元件可以是用于传感器装置的压力传感器的隔膜。