公开(公告)号：US20240133035A1

公开(公告)日：2024-04-25

申请号：US18402969

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Shiva K.T. Rajavelu Muralidhar ,  Sam Kim ,  Jeffrey Barrett Robinson ,  James King Wilson, JR. ,  Ninad Vijay Sonje

IPC: C23C16/46 ,  C23C16/44 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/466 ,  C23C16/4411 ,  C23C16/4586 ,  H01L21/67201 ,  H01L21/68757

Abstract: A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

公开(公告)号：US11965262B2

公开(公告)日：2024-04-23

申请号：US17092599

申请日：2020-11-09

Applicant: ASM IP Holding B.V.

Inventor： Yong Min Yoo ,  Jong Won Shon ,  Seung Woo Choi ,  Dong Seok Kang

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C25D11/02 ,  C25D11/04 ,  H01J37/32 ,  H01L21/67

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/4583 ,  C23C16/5096 ,  C25D11/022 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68757 ,  H01J37/32477

Abstract: A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.

公开(公告)号：US20240123416A1

公开(公告)日：2024-04-18

申请号：US18378222

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： Leonard Rodriguez

IPC: B01J8/18 ,  B01J8/24

CPC classification number: B01J8/1809 ,  B01J8/24 ,  B01J2219/00209 ,  B01J2219/00225 ,  B01J2219/00761

Abstract: Vapor delivery apparatus configured for generating a gaseous precursor from solid source precursor particles in a fluidized bed are disclosed. In addition, vapor phase reactors including a vapor delivery apparatus including a fluidized bed of solid precursor are also disclosed. Methods for monitoring and a controlling a vapor delivery system including a fluidized bed also disclosed.

公开(公告)号：US11959173B2

公开(公告)日：2024-04-16

申请号：US17697079

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC: C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC classification number: C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20240117494A1

公开(公告)日：2024-04-11

申请号：US18367480

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell ,  Viljami Pore

IPC: C23C16/513 ,  C23C16/455 ,  C23C16/515

CPC classification number: C23C16/513 ,  C23C16/45519 ,  C23C16/515

Abstract: The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method including providing a substrate having a gap in a reaction chamber, providing a first precursor including silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor includes at least one unsaturated carbon-carbon bond and at least one atom selected from oxygen and nitrogen. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one unsaturated bond is a double bond.

公开(公告)号：US20240110282A1

公开(公告)日：2024-04-04

申请号：US18475002

申请日：2023-09-26

Applicant: ASM IP Holding, B.V.

Inventor： Hideki Yoshida

IPC: C23C16/46 ,  C23C14/50

CPC classification number: C23C16/466 ,  C23C14/50

Abstract: A loadlock assembly is disclosed. Exemplary loadlock assembly includes a loadlock chamber provided with a plurality of sidewalls, a top portion, a bottom portion, and a plurality of openings through which a substrate is configured to be passed into the loadlock chamber; wherein the loadlock chamber is provided with a plurality of cooling gas intake ports; a substrate support disposed in the loadlock chamber and configured to support the substrate at or near an edge of the substrate; and a chiller unit provided with a plurality of cooling gas nozzles coupled to the cooling gas intake ports and configured to provide a cooling gas that passes through the plurality of cooling gas nozzles to the loadlock chamber.

公开(公告)号：US20240110277A1

公开(公告)日：2024-04-04

申请号：US18530653

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/458

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

公开(公告)号：US11946157B2

公开(公告)日：2024-04-02

申请号：US17743039

申请日：2022-05-12

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Qi Xie

IPC: C30B25/10 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

CPC classification number: C30B25/10 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US11946136B2

公开(公告)日：2024-04-02

申请号：US17014820

申请日：2020-09-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Carl Louis White ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/448 ,  H01L21/02

CPC classification number: C23C16/448 ,  H01L21/02271 ,  H01L21/0262

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

公开(公告)号：US20240102163A1

公开(公告)日：2024-03-28

申请号：US18463034

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： Patricio Romero ,  Charles Dezelah ,  Viljami J. Pore

IPC: C23C16/455

CPC classification number: C23C16/45553

Abstract: Compositions, related methods, and related systems are disclosed. The compositions can comprise a precursor and a liquid solvent. The precursor can be unstable in substantially pure form in an inert atmosphere at a temperature of at least 10° C. to at most 100° C. The solvent can have a vapor pressure of at most 1.0 mPa at a temperature of 20° C.