公开(公告)号：US12203171B2

公开(公告)日：2025-01-21

申请号：US17861750

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin K. Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US11696433B2

公开(公告)日：2023-07-04

申请号：US17307366

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Fredrick Fishburn

IPC: H10B12/00

CPC classification number: H10B12/30 ,  H10B12/03 ,  H10B12/05

Abstract: Memory devices and methods of manufacturing memory devices are provided. Described are devices and methods where 3D pitch multiplication decouples high aspect ratio etch width from cell width, creating small cell active area pitch to allow for small DRAM die size.

公开(公告)号：US20230068312A1

公开(公告)日：2023-03-02

申请号：US17897378

申请日：2022-08-29

Applicant: Applied Materials, Inc.

Inventor： Suketu Arun Parikh ,  Ashish Pal ,  El Mehdi Bazizi ,  Andrew Yeoh ,  Nitin K. Ingle ,  Arvind Sundarrajan ,  Guan Huei See ,  Martinus Maria Berkens ,  Sameer A. Deshpande ,  Balasubramanian Pranatharthiharan ,  Yen-Chu Yang

IPC: H01L21/768 ,  H01L21/8234 ,  H01L23/48

Abstract: Semiconductor devices and methods of manufacturing the same are described. Transistors are fabricated using a standard process flow. A via opening extending from the top surface of the substrate to a bottom surface of the wafer device is formed, thus allowing nano TSV for high density packaging, as well as connecting the device to the backside power rail. A metal is deposited in the via opening, and the bottom surface of the wafer device is bound to a bonding wafer. The substrate is optionally thinned, and a contact electrically connected to the metal is formed.

公开(公告)号：US20230056280A1

公开(公告)日：2023-02-23

申请号：US17974859

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11515163B2

公开(公告)日：2022-11-29

申请号：US17142626

申请日：2021-01-06

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US20220223409A1

公开(公告)日：2022-07-14

申请号：US17144972

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

公开(公告)号：US11004689B2

公开(公告)日：2021-05-11

申请号：US16435910

申请日：2019-06-10

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Rui Cheng ,  Anchuan Wang ,  Nitin K. Ingle ,  Abhijit Basu Mallick

IPC: H01L21/3065 ,  H01L21/311 ,  B81C1/00 ,  H01L21/3213 ,  H01J37/00 ,  H01L27/11582

Abstract: Exemplary methods for selectively removing silicon (e.g. polysilicon) from a patterned substrate may include flowing a fluorine-containing precursor into a substrate processing chamber to form plasma effluents. The plasma effluents may remove silicon (e.g. polysilicon, amorphous silicon or single crystal silicon) at significantly higher etch rates compared to exposed silicon oxide, silicon nitride or other dielectrics on the substrate. The methods rely on the temperature of the substrate in combination with some conductivity of the surface to catalyze the etch reaction rather than relying on a gas phase source of energy such as a plasma.

公开(公告)号：US20190311900A1

公开(公告)日：2019-10-10

申请号：US15949341

申请日：2018-04-10

Applicant: Applied Materials, Inc.

Inventor： Mandar B. Pandit ,  Mang-Mang Ling ,  Tom Choi ,  Nitin K. Ingle

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/67

Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include selectively removing the modified surface of the first material from the semiconductor substrate.

公开(公告)号：US20190272998A1

公开(公告)日：2019-09-05

申请号：US16416865

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US10249507B2

公开(公告)日：2019-04-02

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui Li ,  Xing Zhong ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/3213 ,  C30B33/12 ,  C09K13/06

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.