QUANTUM DOT PHOTODETECTOR APPARATUS AND ASSOCIATED METHODS

    公开(公告)号:US20180337295A1

    公开(公告)日:2018-11-22

    申请号:US15779213

    申请日:2016-11-24

    Applicant: EMBERION OY

    Abstract: An apparatus comprising at least one pair of first and second photodetectors, each photodetector of the photodetector pair comprising a channel member, respective source and drain electrodes configured to enable a flow of electrical current 5 through the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the electrical current flowing through the channel member, wherein the apparatus is configured such that the first and second photodetectors 10 of the photodetector pair generate electron-hole pairs which produce an increase and decrease in electrical current through the channel members respectively, the combined change in electrical current of the pair of first and second photodetectors being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.

    GATED SUPERCONDUCTING PHOTON DETECTOR
    93.
    发明申请

    公开(公告)号:US20180335343A1

    公开(公告)日:2018-11-22

    申请号:US16028293

    申请日:2018-07-05

    Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.

    CIRCUIT AND DEVICE FOR SMALL PHOTO CURRENTS AND DETECTION OF SMALL PHOTO CURRENTS

    公开(公告)号:US20180328784A1

    公开(公告)日:2018-11-15

    申请号:US16045450

    申请日:2018-07-25

    Inventor: Valentin Korman

    CPC classification number: G01J1/44 G01J2001/446

    Abstract: A bridge circuit arrangement, method of providing said bridge circuit arrangement, and uses thereof are described. The bridge circuit arrangement comprises a first photodevice configured on a first arm, a second photodevice configured on a second arm, a first resistor configured on a third arm, and a second resistor configured on a fourth arm of the bridge. The first and second photodevice provide current flow.

    METHOD OF OPTICAL POWER SELF-REFERENCING AND TEST CORD VERIFICATION

    公开(公告)号:US20180283937A1

    公开(公告)日:2018-10-04

    申请号:US15471846

    申请日:2017-03-28

    CPC classification number: G01J1/44 G01M11/33

    Abstract: An optical measurement device and loss measurement is provided. The optical measurement device receives one or more optical signals that respectively emanate from one or more optical fibers of a plurality of optical fibers of an optical fiber cable. The optical measurement device captures one or more images of the one or more optical signals and determines, based on the one or more images, one or more receiving positions of the one or more optical signals, respectively.

    CHARGE PACKET SIGNAL PROCESSING USING PINNED PHOTODIODE DEVICES

    公开(公告)号:US20180274975A1

    公开(公告)日:2018-09-27

    申请号:US15992853

    申请日:2018-05-30

    Inventor: Roger PANICACCI

    CPC classification number: G01J1/4228 G01J1/44 G01J2001/446 H04N5/378

    Abstract: An image sensor may include an array of image pixels coupled to analog-to-digital conversion circuitry formed from pinned photodiode charge transfer circuits. Majority charge carriers for the pinned photodiodes in the charge transfer circuits may be electrons for photodiode wells formed from n-type doped regions and may be holes for photodiode formed from p-type doped regions. Pinned photodiodes may be used for charge integration onto a capacitive circuit node. Pinned photodiodes may also be used for charge subtraction from a capacitive circuit node. Comparator circuitry may be used to determine digital values for the pixel output levels in accordance with single-slope conversion, successive-approximation-register conversion, cyclic conversion, and first or second order delta-sigma conversion techniques. The array of image pixels used for imaging may have a conversion mode wherein at least a portion of the pixel circuitry in the array are operated similar to the charge transfer circuits.

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