公开(公告)号：US20090065145A1

公开(公告)日：2009-03-12

申请号：US12267813

申请日：2008-11-10

Applicant: Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Kenetsu Yokogawa

Inventor： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Kenetsu Yokogawa

IPC: C23F1/08

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

Abstract: A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.

Abstract translation: 等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极， 用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。 使用在施加高频功率的处理室内产生的等离子体处理工件。 在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

公开(公告)号：US20080283748A1

公开(公告)日：2008-11-20

申请号：US12003374

申请日：2007-12-21

Applicant: Takao Matsumoto ,  Ruriko Tsuneta ,  Masanari Koguchi

Inventor： Takao Matsumoto ,  Ruriko Tsuneta ,  Masanari Koguchi

IPC: G21K7/00

CPC classification number: H01J37/26 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/2482 ,  H01J2237/2802

Abstract: An electron microscope for simultaneously adjusting the tilt, rotation and temperature of the specimen, and rapidly heating a desired localized section of the specimen. Specimen holders support the specimen on one side, and contain a space on the other side. A laser beam mechanism for heating the vicinity of the specimen irradiates a focused laser beam onto the specimen from this space. The output from a light position sensor installed in the specimen holders is utilized to adjust the irradiation position of the focused laser beam by controlling a fine motion mechanism for inputting light into the vicinity of the specimen stand.

Abstract translation: 电子显微镜，用于同时调整样品的倾斜，旋转和温度，并快速加热样品的所需局部截面。 样品支架一侧支撑样品，另一面包含一个空间。 用于加热试样附近的激光束机构将聚焦的激光束从该空间照射到试样上。 通过控制用于将光输入到试样台附近的微细运动机构，安装在试样架上的光位置传感器的输出用于调整聚焦激光束的照射位置。

公开(公告)号：US20080280451A1

公开(公告)日：2008-11-13

申请号：US12073048

申请日：2008-02-28

Applicant: Yutaka Ohmoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma ,  Ken Yoshioka ,  Tsunehiko Tsubone

Inventor： Yutaka Ohmoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma ,  Ken Yoshioka ,  Tsunehiko Tsubone

IPC: H01L21/3065

CPC classification number: H01L21/67109 ,  H01J2237/2001 ,  H01L21/67248

Abstract: A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.

Abstract translation: 一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。

公开(公告)号：US20080271471A1

公开(公告)日：2008-11-06

申请号：US10583847

申请日：2004-12-24

Applicant: Toshihisa Nozawa ,  Koji Kotani

Inventor： Toshihisa Nozawa ,  Koji Kotani

IPC: G05D23/19 ,  F25D17/02 ,  H01L21/205

CPC classification number: C23C16/463 ,  C23C16/4411 ,  C23C16/46 ,  F25B2700/21 ,  F25D17/02 ,  F25D2400/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67248

Abstract: A substrate processing system comprises a plurality of CVD processing units (15a-15c) and one refrigerator (101). A supply line (102) for supplying a cooling medium from the refrigerator to the CVD processing units, and a feedback line (103) for feeding the cooling medium back to the refrigerator from the processing units are laid in the system. The cooling medium from the refrigerator is thus distributively fed to the processing units. Circuits (104a-104c) are laid out in rod stages (33), objects of temperature control, in the respective processing units. Each circuit is connected to the supply line and to the feedback line. The cooling medium is circulated around the circuits to control the temperatures of the rod stages stably. When the temperature of the rod stage rises, the cooling medium at a low temperature is taken in the circuit from the supply line to cool the rod stage.

Abstract translation: 衬底处理系统包括多个CVD处理单元（15a-15c）和一个冰箱（101）。 用于从冷藏室向CVD处理单元供给冷却介质的供给管线（102），以及用于将冷却介质从处理单元送回到冰箱的反馈管线（103）。 因此，来自冰箱的冷却介质被分配地供给到处理单元。 电路（104a-104c）在相应的处理单元中的杆级（33），温度控制对象中布置。 每个电路连接到电源线和反馈线。 冷却介质在电路周围循环，以稳定地控制棒级的温度。 当杆台的温度上升时，低温的冷却介质从电源线从电路中取出，冷却棒台。

公开(公告)号：US20080268645A1

公开(公告)日：2008-10-30

申请号：US12134715

申请日：2008-06-06

Applicant: CHIEN-TEH KAO ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

Inventor： CHIEN-TEH KAO ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

IPC: H01L21/311

CPC classification number: H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.

Abstract translation: 在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一 在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。 该膜通常含有六氟硅酸铵。 该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。 气体混合物可以含有氨，三氟化氮和载气。

公开(公告)号：US20080257494A1

公开(公告)日：2008-10-23

申请号：US12022803

申请日：2008-01-30

Applicant: Daisuke Hayashi ,  Kazuya Nagaseki

Inventor： Daisuke Hayashi ,  Kazuya Nagaseki

IPC: C23F1/02 ,  C23C16/52

CPC classification number: C23C16/4583 ,  C23C16/46 ,  C23C16/466 ,  H01J37/20 ,  H01J2237/2001 ,  H01L21/02071 ,  H01L21/67109

Abstract: A substrate processing apparatus capable of rapidly raising and lowering the processing temperature of a substrate. The substrate processing apparatus has a mounting stage adapted to be mounted with a substrate and to control the processing temperature of the mounted substrate. The mounting stage comprises a temperature control device disposed in a mounting surface of the mounting stage for mounting the substrate thereon, a coolant inflow chamber into which a coolant is flowed, and a heat transmission/insulation switch-over chamber disposed between the temperature control device and the coolant inflow chamber so that a heat-transmitting gas is flowed into and vacuum-exhausted from the heat transmission/insulation switch-over chamber. The temperature control device has therein a gas inflow chamber into which a hot gas is flowed.

Abstract translation: 能够快速提高和降低基板的处理温度的基板处理装置。 基板处理装置具有适于安装有基板并且控制安装的基板的处理温度的安装台。 安装台包括设置在安装台的安装表面上的温度控制装置，用于将基板安装在其上，冷却剂流入室，冷却剂流过该冷却剂流入室，以及布置在温度控制装置 和冷却剂流入室，使得传热气体从传热/绝缘切换室流入并真空排出。 温度控制装置在其中具有流入热气体的气体流入室。

公开(公告)号：US20080236493A1

公开(公告)日：2008-10-02

申请号：US12055945

申请日：2008-03-26

Applicant: Yosuke SAKAO

Inventor： Yosuke SAKAO

IPC: C23C16/505

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J2237/2001

Abstract: A plasma processing apparatus performs a plasma processing on a substrate to be processed by generating plasma between a first electrode and a second electrode disposed to face each other in a processing chamber by applying a radio frequency power to the first electrode from a radio frequency power supply connected to the first electrode. The plasma processing apparatus includes a dielectric body disposed near the first electrode and a conductor provided in the dielectric body. Further, a radio frequency leakage line is connected to the conductor, and the radio frequency power applied to the first electrode leaks through the radio frequency leakage line to an earth ground. In addition, an impedance adjusting circuit is provided on the radio frequency leakage line and controls an amount of the radio frequency power flowing through the radio frequency leakage line by adjusting an impedance.

Abstract translation: 等离子体处理装置通过在处理室内通过从射频电源向第一电极施加射频电力而在处理室中彼此面对的第一电极和第二电极之间产生等离子体来对待处理的基板进行等离子体处理 连接到第一电极。 等离子体处理装置包括设置在第一电极附近的电介质体和设置在电介质体中的导体。 此外，射频漏电线连接到导体，并且施加到第一电极的射频功率通过射频漏电线泄漏到地面。 另外，在射频漏电线路上设置阻抗调整电路，通过调整阻抗来控制流过射频漏电线路的射频功率量。

公开(公告)号：US20080223524A1

公开(公告)日：2008-09-18

申请号：US12153101

申请日：2008-05-14

Applicant: Katsuhisa Kasanami ,  Toshimitsu Miyata ,  Mitsunori Ishisaka

Inventor： Katsuhisa Kasanami ,  Toshimitsu Miyata ,  Mitsunori Ishisaka

IPC: H01L21/3065 ,  C23C16/452 ,  B01J19/12

CPC classification number: H01L21/67103 ,  H01J37/32082 ,  H01J2237/2001 ,  Y10T279/23

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract translation: 管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。 用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内部。 用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。 高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。 即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。

公开(公告)号：US20080203925A1

公开(公告)日：2008-08-28

申请号：US11679979

申请日：2007-02-28

Applicant: Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

Inventor： Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

IPC: H05H1/00

CPC classification number: H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109

Abstract: A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.

Abstract translation: 等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。 通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

公开(公告)号：US20080108208A1

公开(公告)日：2008-05-08

申请号：US11733467

申请日：2007-04-10

Applicant: Edwin A. Arevalo ,  Christopher R. Hatem ,  Anthony Renau ,  Jonathan Gerald England

Inventor： Edwin A. Arevalo ,  Christopher R. Hatem ,  Anthony Renau ,  Jonathan Gerald England

IPC: H01L21/425

CPC classification number: H01L21/26506 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26593

Abstract: Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

Abstract translation: 公开了形成浅结的技术。 在一个特定的示例性实施例中，可以将技术实现为用于形成浅结的方法。 该方法可以包括产生基于选自以下的一种或多种材料的分子离子的离子束：二氧化锗（Ge 2 H 6 H 6），氮化锗（Ge 3-N 3），锗 - 氟化合物（GF n n，其中n = 1,2或3）和其它含锗的 化合物。 该方法还可以包括使离子束撞击半导体晶片。