公开(公告)号：US20190013211A1

公开(公告)日：2019-01-10

申请号：US15972434

申请日：2018-05-07

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Naomi Yoshida ,  Soumendra N. Barman ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: Methods are described herein for etching tantalum-containing films with various potential additives while still retaining other desirable patterned substrate portions. The methods include exposing a tantalum-containing film to a chlorine-containing precursor (e.g. Cl2) with a concurrent plasma. The plasma-excited chlorine-containing precursor selectively etches the tantalum-containing film and other industrially-desirable additives. Chlorine is then removed from the substrate processing region. A hydrogen-containing precursor (e.g. H2) is delivered to the substrate processing region (also with plasma excitation) to produce a relatively even and residue-free tantalum-containing surface. The methods presented remove tantalum while retaining materials elsewhere on the patterned substrate.

公开(公告)号：US20180195179A1

公开(公告)日：2018-07-12

申请号：US15899234

申请日：2018-02-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US09966240B2

公开(公告)日：2018-05-08

申请号：US14514222

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  G01J3/02 ,  C23C16/50 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32972 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/3255

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

公开(公告)号：US09960045B1

公开(公告)日：2018-05-01

申请号：US15423543

申请日：2017-02-02

Applicant: Applied Materials, Inc.

Inventor： Vinod Robert Purayath ,  Nitin K. Ingle

IPC: H01L21/28 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/06

CPC classification number: H01L21/28282 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/0649

Abstract: In a 3D NAND device, the charge trap region of a memory cell is formed as a separate charge-trap “island.” As a result, the charge-trap region of one memory cell is electrically isolated from charge-trap regions in adjacent memory cells. The charge trap region of one memory cell is separated from the charge trap regions of adjacent memory cells by a dielectric structure, such as a silicon oxide film. Alternatively, the charge trap region of a memory cell is separated from the charge trap regions of adjacent memory cells by an air, gas, or vacuum gap.

公开(公告)号：US09754800B2

公开(公告)日：2017-09-05

申请号：US15137754

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/32137 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/32136

Abstract: A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

公开(公告)号：US20170148640A1

公开(公告)日：2017-05-25

申请号：US15235048

申请日：2016-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144

Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.

公开(公告)号：US20170110475A1

公开(公告)日：2017-04-20

申请号：US15393105

申请日：2016-12-28

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L27/11582 ,  H01L21/3213 ,  H01L21/67 ,  H01L27/11568

CPC classification number: H01L27/11582 ,  C23F4/00 ,  H01J37/32357 ,  H01L21/28 ,  H01L21/32136 ,  H01L21/67225 ,  H01L27/11568

Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.

公开(公告)号：US20170040180A1

公开(公告)日：2017-02-09

申请号：US14818165

申请日：2015-08-04

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is selectable from about one to several hundred. In all cases, the etch rate of exposed silicon, if present, is negligible. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The additional precursor may be a nitrogen-and-hydrogen-containing precursor such as ammonia.

Abstract translation: 描述了在图案化的异质结构上蚀刻氧化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF与衬底处理区域中的另外的前体结合。 在形成组合之前，HF可以通过一个通道进入，另外的前体可以流过另一个通道。 可以在衬底附近形成组合。 相对于氮化硅的氧化硅蚀刻选择性可以从大约一百到几百个来选择。 在所有情况下，暴露的硅的蚀刻速率（如果存在）是可忽略的。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 另外的前体可以是含氮和氢的前体，例如氨。

公开(公告)号：US09540736B2

公开(公告)日：2017-01-10

申请号：US14793977

申请日：2015-07-08

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00 ,  C23F1/12 ,  C30B33/12 ,  C23F4/00

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法，其有助于最小化在多晶材料的晶界处的较高蚀刻速率。 某些方法涉及多晶材料的非晶化，其它方法涉及等离子体处理，而另一些方法涉及在蚀刻工艺中使用小剂量的卤化物转移剂。

公开(公告)号：US09502258B2

公开(公告)日：2016-11-22

申请号：US14581332

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ching-Mei Hsu ,  Zihui Li ,  Ludovic Godet ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/265 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/322

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/32137 ,  H01L21/32155 ,  H01L21/3223

Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了在图案化衬底上各向异性地干蚀刻暴露的衬底材料的方法。 图案化衬底具有由例如含硅材料或含金属材料制成的单一材料形成的间隙。 该方法包括定向离子注入图案化结构以植入间隙的底部，而基本上不插入间隙的壁。 随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得（1）相对于间隙的底板选择性地蚀刻壁，或者（2）相对于壁选择性地蚀刻地板 的差距。 在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。