公开(公告)号：US20160055980A1

公开(公告)日：2016-02-25

申请号：US14779542

申请日：2014-04-02

Applicant: CAVENDISH KINETICS, INC

Inventor： Richard L. KNIPE ,  Robertus Petrus VAN KAMPEN

IPC: H01G5/18 ,  H01G5/013 ,  H01G5/011

CPC classification number: H01G5/18 ,  B81B3/0051 ,  B81B3/007 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/0136 ,  H01G5/16 ,  H01H59/0009 ,  H01H2059/0072

Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent C max value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

Abstract translation: 本发明一般涉及一种MEMS DVC及其制造方法。 MEMS DVC包括可从距离RF电极间隔第一距离的位置移动的板和距离RF电极间隔第二距离的第二位置小于第一距离的板。 当处于第二位置时，板通过在RF电极上具有RF平台的电介质层与RF电极间隔开。 还可以存在一个或多个次级着陆触点和一个或多个板弯曲触点，以确保该板获得与RF平台的良好接触，并且可以获得一致的C max值。 在图中，PB接触是板弯接触，SL接触是第二着陆接触，PD电极是下拉电极。

公开(公告)号：US09255000B2

公开(公告)日：2016-02-09

申请号：US14108901

申请日：2013-12-17

Applicant: Robert Bosch GmbH

Inventor： Ando Lars Feyh ,  Po-Jui Chen ,  Markus Ulm

IPC: H01L29/84 ,  H01L21/50 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L29/772 ,  H01L21/02 ,  H01L21/58

CPC classification number: B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0228 ,  B81C1/00134 ,  B81C1/00246 ,  B81C2203/0771

Abstract: A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.

Abstract translation: 半导体器件包括衬底，位于衬底上方的第一介电层，移动栅极换能器和校验块。 移动栅极换能器至少部分地形成在衬底内并且至少部分地形成在第一介电层内。 检测质量包括第一电介质层的一部分和硅层的一部分。 硅层位于第一介电层的上方。

公开(公告)号：US20150289046A1

公开(公告)日：2015-10-08

申请号：US14275337

申请日：2014-05-12

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen

IPC: H04R1/08

CPC classification number: H04R31/003 ,  B81B3/0021 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/08 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

Abstract translation: MEMS器件包括背板电极和与背板电极间隔开设置的膜。 膜包括可移位部分和固定部分。 背板电极和膜被布置成使得膜的固定部分与背板电极的重叠区域小于最大重叠。

公开(公告)号：US20150158721A1

公开(公告)日：2015-06-11

申请号：US14508673

申请日：2014-10-07

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Michael J. DeBar ,  David J. Howard

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00293 ,  B81B2201/0221 ,  B81B2201/0271 ,  B81C2203/0145

Abstract: Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.

Abstract translation: 公开了具有具有相似压力和/或类似气体化学性质的下部，上部和释放室的MEMS器件。 MEMS器件包括顶部MEMS板和底部MEMS板。 MEMS器件还包括在底部MEMS板和顶部MEMS板之间的下腔室，以及位于顶部MEMS板和第一密封层之间的上腔室。 MEMS装置还包括在顶部MEMS板和第二密封层之间的释放室，释放室允许上部和/或下部腔室的气体含量被释放。 还公开了用于释放上部和/或下部室的气体含量的双重释放方法。

公开(公告)号：US09035428B2

公开(公告)日：2015-05-19

申请号：US13831470

申请日：2013-03-14

Applicant: Invensense, Inc.

Inventor： Michael Julian Daneman ,  Martin Lim ,  Li-Wen Hung ,  Stephen Lloyd

IPC: H01L29/93 ,  H01L27/12 ,  B81B3/00

CPC classification number: H01L27/1203 ,  B81B3/0056 ,  B81B2201/0221 ,  B81B2203/053

Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.

Abstract translation: 微电子机械系统（MEMS）装置包括具有第一表面和第二表面的第一基底，第一基底包括基底层，设置在基底层上的可移动光束，至少一个金属层，以及一个或 更多的间隔设置在基底层上，使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底，第二衬底包括一个或多个结合到一个或多个支座的金属层，导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。

公开(公告)号：US08940570B2

公开(公告)日：2015-01-27

申请号：US13342450

申请日：2012-01-03

Applicant: Christopher V. Jahnes ,  Anthony K. Stamper

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01L21/00

CPC classification number: B81B3/001 ,  B81B3/0008 ,  B81B3/0013 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/0015 ,  H01G5/18

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.

Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括在基板上形成至少一个固定电极。 该方法还包括在至少一个固定电极上形成从MEMS光束的顶部观察的具有变化的宽度尺寸的微机电系统（MEMS）光束。

公开(公告)号：US20140307361A1

公开(公告)日：2014-10-16

申请号：US14249989

申请日：2014-04-10

Applicant: Rohde & Schwarz GmbH & Co. KG

Inventor： Gerhard KAHMEN

IPC: H01G5/16 ,  B81B7/00

CPC classification number: H01G5/16 ,  B81B3/0078 ,  B81B7/00 ,  B81B2201/0221

Abstract: The invention relates to a varactor with an actuator, wherein the first actuator surface (2a) of the actuator is embodied on a substrate (1), and a second actuator surface (2b) is embodied on a first movable membrane (3a). In this context, the first movable membrane (3a) is arranged above an upper side (1a) of the substrate (1). A second movable membrane (2b) is arranged below a lower side (1b) of the substrate (1) facing away from the upper side (1a). The invention further relates to a varactor system made from two such varactors.

Abstract translation: 本发明涉及具有致动器的变容二极管，其中致动器的第一致动器表面（2a）被实施在基板（1）上，并且第二致动器表面（2b）被实施在第一可移动膜（3a）上。 在本文中，第一可移动膜（3a）布置在基板（1）的上侧（1a）的上方。 第二可移动膜（2b）布置在基板（1）的背离上侧（1a）的下侧（1b）的下方。 本发明还涉及由两个这种变容二极管制成的变容二极管系统。

公开(公告)号：US08847289B2

公开(公告)日：2014-09-30

申请号：US13581499

申请日：2010-07-28

Applicant: Zhe Wang

Inventor： Zhe Wang

IPC: H01L29/84 ,  H04R31/00 ,  H04R19/00 ,  H04R19/04 ,  B81C1/00

CPC classification number: H04R31/00 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H04R19/005 ,  H04R19/04

Abstract: A CMOS compatible MEMS microphone is disclosed. In one embodiment, the microphone comprises an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portion thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap provided between the diaphragm and the microphone backplate.

Abstract translation: 公开了一种CMOS兼容的MEMS麦克风。 在一个实施例中，麦克风包括SOI衬底，其中CMOS电路容纳在其硅器件层上; 形成有硅器件层的一部分的麦克风隔膜，其中所述麦克风隔膜被掺杂以变成导电; 麦克风背板，包括设置在硅器件层上方的金属层的CMOS钝化层和多个通孔，其中多个通孔形成在与麦克风隔膜相对的部分中，金属层形成 背板电极板; 从所述麦克风背板的与所述隔膜相对的下表面突出的多个凹坑; 以及设置在隔膜和麦克风背板之间的气隙。

公开(公告)号：US20140284730A1

公开(公告)日：2014-09-25

申请号：US13965133

申请日：2013-08-12

Applicant: KAIBUSHIKI KAISHA TOSHIBA

Inventor： Tomohiro SAITO

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B2201/0221

Abstract: According to one embodiment, a MEMS device comprises a first electrode provided on a support substrate, a burying insulating film formed at the sides of the first electrode, and a second electrode opposed to the first electrode, having ends extending outside the ends of the first electrode and able to move in the direction it is opposed to the first electrode.

Abstract translation: 根据一个实施例，MEMS器件包括设置在支撑衬底上的第一电极，形成在第一电极侧面的埋入绝缘膜和与第一电极相对的第二电极，其端部延伸到第一电极的端部外侧 并且能够在与第一电极相对的方向上移动。

公开(公告)号：US20140185181A1

公开(公告)日：2014-07-03

申请号：US13891774

申请日：2013-05-10

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jyun-Cheng Huang ,  Chih-Hsiang Ko ,  Tsun-Che Huang ,  Chin-Hung Wang

IPC: H01G7/00

CPC classification number: H01G5/38 ,  B81B3/0056 ,  B81B2201/0221 ,  H01G5/18 ,  H03J3/20 ,  H03J2200/39

Abstract: A tunable capacitor includes a substrate, a movable member, a first capacitive plate, a second capacitive plate, a third capacitive plate and a set of electrode plates. The movable member is disposed on the substrate. The movable member is adapted for moving away or toward the substrate to have a first position and a second position, respectively. The first capacitive plate is disposed on the movable member and faces the substrate. The second capacitive plate and the third capacitive plate are disposed on the substrate and face the first capacitive plate. The set of electrode plates, disposed on the substrate, faces the at least one movable member. The set of electrode plates, driven by an electrical voltage, generates electrostatic force causing the movable member to be drawn from the first position to the second position thereof to correspondingly adjust capacitance between the capacitive plates.

Abstract translation: 可调谐电容器包括基板，可移动元件，第一电容板，第二电容板，第三电容板和一组电极板。 可移动部件设置在基板上。 可移动部件适于移动或朝向基板移动以分别具有第一位置和第二位置。 第一电容板设置在可动构件上并且面向衬底。 第二电容板和第三电容板设置在基板上并面向第一电容板。 设置在基板上的电极板组面向至少一个可移动部件。 由电压驱动的一组电极板产生静电力，导致可动构件从第一位置拉至其第二位置，以对应地调节电容板之间的电容。