Abstract:
A thin-film, diaphragm based device is disclosed which can be used to perform an array of sensing and actuating operations where a very thin profile is desired, such as in millimeter, micrometer, or nanometer tight spaces.
Abstract:
A device including a first substrate in which a functional element and an electrode are formed; a second substrate in which a through electrode is formed; a joining material that joins the first substrate and the second substrate while reserving a predetermined space between the functional element and the second substrate; and a conductive material that electrically connects the electrode to the through electrode. Here, the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material.
Abstract:
A pressure sensor comprises a deformable membrane deflecting in response to pressure applied, a first stationary electrode, and a second electrode coupled to the deformable membrane, for determining a change in a capacitance between the first and the second electrode in response to the pressure applied. At least one of the first and the second electrode comprises a getter material for collecting gas molecules.
Abstract:
A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer.
Abstract:
In various embodiments, a sensor apparatus is provided. The sensor apparatus includes a sensor device having a plurality of electrical contacts; a housing having a plurality of sidewalls; and a metal carrier structure, which extends into the housing in a manner passing through two mutually opposite sidewalls from the plurality of sidewalls. The metal carrier structure is embodied in a resilient fashion at least in the direction of a sidewall through which the metal carrier structure extends. The sensor device having the plurality of electrical contacts is mounted in a resilient fashion on the metal carrier structure and is electrically conductively connected to the metal carrier structure by the plurality of contacts.
Abstract:
A pressure difference sensor includes a measuring membrane, which is arranged between two platforms and connected pressure-tightly with the platforms, in each case, via a first insulating layer for forming pressure chambers between the platforms and the measuring membrane. The insulating layer is especially silicon oxide, wherein the pressure difference sensor further includes an electrical transducer for registering a pressure dependent deflection of the measuring membrane. The platforms have support positions, against which the measuring membrane lies at least partially in the case of overload, wherein the support positions have position dependent heights, characterized in that the support positions are formed in the first insulating layer by isotropic etching, and the particular height h of a support position, in each case, is a function of a distance from a base of the support position in the reference plane.
Abstract:
To provide a touch panel with reduced disturbance of display and with improved mechanical strength by suppressing variation in the space between a pair of substrates which form the touch panel even when in contact with an object to be detected. A pixel portion including a plurality of pixels is provided between a pair of substrates. Each pixel includes a photosensor portion which detects that the object to be detected is in contact with one of the pair of substrates, and a MEMS portion which generates a mechanical displacement in a direction perpendicular to the pair of substrates when a signal based on a detection result of the photosensor portion is input.
Abstract:
Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.
Abstract:
The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The bonded substrate comprises a first cavity corresponding to a first MEMS device having a first pressure and a second cavity corresponding to a second MEMS device having a different second pressure. The second cavity comprises a major volume and a vent hole connected by a lateral channel disposed between the device substrate and the cap substrate and the vent hole is hermetically sealed by a sealing structure.
Abstract:
A sensor device is constructed to maintain a high glass strength to avoid the glass failure at low burst pressure, resulting from the sawing defects located in the critical high stress area of the glass pedestal as one of the materials used for construction of the sensor. This is achieved by forming polished recess structures in the critical high stress areas of the sawing street area. The sensor device is also constructed to have a robust bonding with the die attach material by creating a plurality of micro-posts on the mounting surface of the glass pedestal.