VOLTAGE COMPENSATION OF DIFFERENTIAL VOLTAGE SWING

    公开(公告)号:US20240291488A1

    公开(公告)日:2024-08-29

    申请号:US18582446

    申请日:2024-02-20

    CPC classification number: H03K19/00369 H03K19/017545 H03K19/017581

    Abstract: The present disclosure is directed to a voltage driver, where a combination of first and second resistance blocks controls a differential voltage swing on the outputs of the voltage driver. Variations of an input voltage are compensated by adding different values of the first resistance block to the second resistance block, while keeping a summation of the first and second resistance blocks at a constant value. Three different circuit diagrams are disclosed to generate these different resistances. In each circuit diagram, one or more control signals change the resistance of the combination of first and second resistance blocks. In some embodiments, the value of the second resistance block is changed by the first resistance block to maintain an impedance matching between a transmitter and a receiver, while changing of the first resistance block compensates for the differential voltage swing.

    HEMT TRANSISTOR
    117.
    发明公开
    HEMT TRANSISTOR 审中-公开

    公开(公告)号:US20240266425A1

    公开(公告)日:2024-08-08

    申请号:US18422867

    申请日:2024-01-25

    CPC classification number: H01L29/778 H01L29/66462

    Abstract: The present disclosure relates to a method of forming an HEMT transistor, comprising the following successive steps: a) providing a stack comprising a semiconductor channel layer, a semiconductor barrier layer on top of and in contact with the semiconductor channel layer, and a semiconductor gate layer arranged on top of and in contact with the semiconductor barrier layer, the semiconductor gate layer comprising P-type dopant elements; and b) compensating for the P-type doping with oxygen atoms, in an upper portion of the semiconductor gate layer, by an oxygen anneal, so as to define a PN junction at the interface between the upper portion and a central portion of the semiconductor gate layer.

    STANDARD CELL LAYOUT METHODOLOGY FOR LOW LEAKAGE SOLUTIONS

    公开(公告)号:US20240266343A1

    公开(公告)日:2024-08-08

    申请号:US18418051

    申请日:2024-01-19

    CPC classification number: H01L27/0207 H01L21/76224 H01L23/5386 H01L29/0607

    Abstract: An integrated circuit includes a semiconductor substrate patterned to include a first semiconductor track and a second semiconductor track separated from each other by a trench isolation region. The integrated circuit includes a logic circuit including a transistor having a first drain subregion in the first semiconductor track, a second drain subregion in the second semiconductor track, a first source subregion in the first semiconductor track, and a second source subregion in the second semiconductor track. A diffusion bridge of semiconductor material extends between the first and second semiconductor tracks and connects the first source subregion to the second source subregion. The first drain subregion and the second drain subregion are electrically connected by a drain metalization.

    METHOD OF OPERATING A VOICE COIL MOTOR AND CORRESPONDING CONTROL CIRCUIT

    公开(公告)号:US20240265940A1

    公开(公告)日:2024-08-08

    申请号:US18417588

    申请日:2024-01-19

    CPC classification number: G11B5/5569 G11B19/2009 H02P7/025

    Abstract: Embodiments provide a method of operating a voice coil motor via a transconductance loop. The method includes detecting an actual value of a supply voltage of the transconductance loop. An offset compensation signal of the transconductance loop is produced as a function of the detected actual value of the supply voltage based on a relationship between offset values and the supply voltage of the transconductance loop. The offset compensation signal is applied to a loop control signal of the transconductance loop. A drive current is applied to the voice coil motor. The drive current is related to a target drive current that is based on the loop control signal.

    METHOD FOR CLASSIFIER LEARNING FROM A STREAM OF DATA ON A RESOURCE-CONSTRAINED DEVICE

    公开(公告)号:US20240265249A1

    公开(公告)日:2024-08-08

    申请号:US18105729

    申请日:2023-02-03

    CPC classification number: G06N3/08

    Abstract: Methods, apparatuses, systems, and computer program products for artificial intelligence and machine learning for resource constrained devices and systems, including for classifier learning from a stream of data. A classifier may include a neural network comprised of a plurality of layers with each layer comprised of a plurality of neurons. The neural network may include a hidden layer comprised of a plurality of hidden neurons. In various embodiments, the size of the hidden layer may be constrained and the training of a hidden layer included removing one or more hidden neurons from the hidden layer.

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