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    Switch structures or the like based on a thermoresponsive polymer
    112.
    发明申请
    Switch structures or the like based on a thermoresponsive polymer 审中-公开
    基于热响应聚合物的开关结构等

    公开(公告)号：US20060122565A1

    公开(公告)日：2006-06-08

    申请号：US11141730

    申请日：2005-05-31

    Applicant: Chee Kooi

    Inventor： Chee Kooi

    IPC: A61M5/00

    CPC classification number: B81B3/0024 ,  A61M5/16881 ,  A61M5/1723 ,  A61M2205/0266 ,  B81B2201/018 ,  B81B2201/045 ,  B81B2201/054 ,  H01H2037/008 ,  Y10T137/8242

    Abstract: Briefly, in accordance with one embodiment of the invention, a switch structure or the like such as a valve, motor, or optical switch, may be constructed based on a thermoresponsive polymer. At a first temperature the thermoresponsive polymer may be in a first volume state, and at a second temperate the thermoresponsive polymer may be in a second volume state. The change in volume of the thermoresponsive polymer may be operative to push or pull the mechanical structures of the switch, valve, motor, optical switch, and so on, to effectuate operation of the structures.

    Abstract translation: 简而言之，根据本发明的一个实施例，可以基于热能聚合物来构造诸如阀，电动机或光开关的开关结构等。 在第一温度下，热可聚合物可以处于第一体积状态，而在第二温度下，热可聚合物可以处于第二体积状态。 热反应聚合物的体积变化可以用于推动或拉动开关，阀门，电动机，光学开关等的机械结构，以实现结构的操作。

    Microelectro mechanical system switch
    113.
    发明授权
    Microelectro mechanical system switch 有权
    微电机械系统开关

    公开(公告)号：US06960971B2

    公开(公告)日：2005-11-01

    申请号：US10706106

    申请日：2003-11-13

    Applicant: Young-jun Park ,  In-sang Song ,  In-taek Han

    Inventor： Young-jun Park ,  In-sang Song ,  In-taek Han

    IPC: B81B3/00 ,  H01H59/00 ,  H01P1/10 ,  B81B7/02

    CPC classification number: B81B3/0008 ,  B81B2201/018 ,  H01H59/0009

    Abstract: Provided is a microelectro mechanical system (MEMS). The provided MEMS switch includes a substrate; a signal line formed on the substrate; a beam deformed by an electrostatic force to electrically switch with the signal line; and a spring type contact unit formed on the signal line to electrically contact the beam and elastically deformed by an external force. Thus, stability of the contact between the contact unit and the beam is improved. In particular, even when the beam or the contact unit under the beam is unbalanced, the contact unit can elastically contact the beam to obtain a stable electrical switching operation.

    Abstract translation: 提供了一种微电子机械系统（MEMS）。 所提供的MEMS开关包括基板; 形成在基板上的信号线; 通过静电力变形的电子束与信号线电开关的光束; 以及弹簧式接触单元，形成在信号线上，以电接触梁并通过外力弹性变形。 因此，提高了接触单元和梁之间的接触的稳定性。 特别地，即使当梁或梁下的接触单元不平衡时，接触单元可以弹性地接触梁以获得稳定的电开关操作。

    Multi-metal layer MEMS structure and process for making the same
    116.
    发明申请
    Multi-metal layer MEMS structure and process for making the same 有权

    公开(公告)号：US20050000932A1

    公开(公告)日：2005-01-06

    申请号：US10902984

    申请日：2004-07-30

    Applicant: Kaigham Gabriel ,  Xu Zhu

    Inventor： Kaigham Gabriel ,  Xu Zhu

    IPC: B81B3/00 ,  B81C1/00 ,  C23F1/00 ,  H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  H01H59/00 ,  H01L23/48 ,  H01L23/52 ,  H04R19/00 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00

    CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

    Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

    Wafer scale package and method of assembly
    118.
    发明申请
    Wafer scale package and method of assembly 有权
    晶圆尺寸封装及组装方法

    公开(公告)号：US20040191957A1

    公开(公告)日：2004-09-30

    申请号：US10820761

    申请日：2004-04-09

    Applicant: NORTHROP GRUMMAN CORPORATION

    Inventor： Li-Shu Chen ,  Philip C. Smith ,  Thomas J. Moloney ,  Howard Fudem

    IPC: H01L021/44

    CPC classification number: H01L23/10 ,  B81B2201/018 ,  B81B2207/097 ,  B81C1/00301 ,  B81C2203/0118 ,  H01L21/50 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/3011 ,  H01L2924/00

    Abstract: A plurality of electronic circuits and associated signal lines are positioned at respective locations on a base wafer. A cover wafer, which fits over the base wafer, includes a corresponding like number of locations each including one or more cavities to accommodate the electronic circuit and associated signal lines. The cover wafer includes a plurality of vias for making electrical connection to the signal lines. A multi layer metallic arrangement hermetically seals the periphery of each location as well as sealing the bottom of each via. The joined base and cover wafers may then be diced to form individual die packages.

    Abstract translation: 多个电子电路和相关联的信号线位于基底晶片上的相应位置。 安装在基底晶片上方的覆盖晶片包括相应的相似数量的位置，每个位置包括一个或多个空腔以容纳电子电路和相关联的信号线。 覆盖晶片包括用于与信号线进行电连接的多个通孔。 多层金属装置密封每个位置的周边以及密封每个通孔的底部。 然后可以将接合的基底和覆盖晶片切割成单独的管芯封装。

    Multi-metal layer MEMS structure and process for making the same
    119.
    发明申请
    Multi-metal layer MEMS structure and process for making the same 有权
    多金属层MEMS结构和制造过程相同

    公开(公告)号：US20040145056A1

    公开(公告)日：2004-07-29

    申请号：US10349619

    申请日：2003-01-23

    Inventor： Kaigham J. Gabriel ,  Xu Zhu

    IPC: H01L023/48

    CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

    Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

    Abstract translation: 本发明涉及由使用标准CMOS处理技术构建的金属和牺牲材料的交替层的结构，用于构建这种结构的工艺，用于从这种结构制造器件的工艺以及由这样的器件制造的器件 结构体。 在一个实施例中，第一金属层由衬底承载。 第一牺牲层由第一金属层承载。 第二金属层由牺牲层承载。 第二金属层具有形成微加工金属网的部分。 当去除微加工金属网的区域中的第一牺牲层的部分时，微加工金属网被释放并悬浮在第一金属层上方的高度由第一牺牲层的厚度确定。 可以通过在衬底的表面和第一金属层之间提供牺牲材料的基底层来改变结构。 以这种方式，第一金属层的一部分可以形成微机加工的网，其在微加工网的区域中的部分基底牺牲层被去除时释放。 另外，可以提供第二层牺牲材料和第三金属层。 微加工网可以形成在第三金属层的一部分中。 本发明的结构可用于构造可变电容器，开关，并且当确定的网孔被密封时，微型扬声器和麦克风。

    Microelectromechanical switch
    120.
    发明授权
    Microelectromechanical switch 有权
    微机电开关

    公开(公告)号：US06764872B2

    公开(公告)日：2004-07-20

    申请号：US10255839

    申请日：2002-09-27

    Applicant: Tsen-Hwang Lin ,  Yu-Pei Chen ,  Darius L. Crenshaw

    Inventor： Tsen-Hwang Lin ,  Yu-Pei Chen ,  Darius L. Crenshaw

    IPC: H01L2100

    CPC classification number: B81C1/00182 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/40 ,  H01H59/0009 ,  H01P1/127

    Abstract: A microelectromechanical switch includes a substrate, an insulator layer disposed outwardly from the substrate, and an electrode disposed outwardly from the insulator layer. The switch also includes a dielectric layer disposed outwardly from the insulator layer and the electrode, the dielectric layer having a dielectric constant of greater than or equal to twenty. The switch also includes a membrane layer disposed outwardly from the dielectric layer, the membrane layer overlying a support layer, the support layer operable to space the membrane layer outwardly from the dielectric layer.

    Abstract translation: 微机电开关包括衬底，从衬底向外设置的绝缘体层以及从绝缘体层向外设置的电极。 开关还包括从绝缘体层和电极向外设置的电介质层，电介质层的介电常数大于或等于二十。 所述开关还包括从所述电介质层向外设置的膜层，所述膜层覆盖在支撑层上，所述支撑层可操作以将所述膜层从所述电介质层向外空间。

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