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    Micromechanical device and method of manufacture thereof
    111.
    发明申请
    Micromechanical device and method of manufacture thereof 失效
    微机械装置及其制造方法

    公开(公告)号：US20040188783A1

    公开(公告)日：2004-09-30

    申请号：US10806405

    申请日：2004-03-23

    Inventor： Hideyuki Funaki

    IPC: H01L021/00 ,  H02N001/00 ,  H01H057/00 ,  H01L029/82

    CPC classification number: H03H9/462 ,  B81B3/0021 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H13/80 ,  H01H59/0009 ,  H01H2001/0078 ,  H01H2201/008 ,  H03H3/0072

    Abstract: A micromechanical switch comprises a substrate, at least one pair of support members fixed to the substrate, at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate, and a contact portion provided on the moving portion, and a driving electrode placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction parallel to the substrate with electrostatic force so that the contact portions of the beam members which are opposed to each other are short-circuited.

    Abstract translation: 微机械开关包括基板，固定到基板的至少一对支撑构件，至少一对梁构件，其彼此靠近并平行放置在基板上方并分别连接到支撑构件之一 所述梁构件具有可相对于所述基板间隙移动的移动部分和设置在所述移动部分上的接触部分，以及设置在所述一对梁构件之间的所述基板上的驱动电极，以吸引所述移动部分的移动部分 梁构件在与静电力平行的方向上使得梁构件彼此相对的接触部分短路。

    MEMS devices on a nanometer scale
    113.
    发明申请
    MEMS devices on a nanometer scale 失效
    MEMS器件纳米级

    公开(公告)号：US20030173647A1

    公开(公告)日：2003-09-18

    申请号：US10216654

    申请日：2002-08-12

    Inventor： Lars G. Montelius ,  Torbjorn G.I. Ling ,  Andrej Litwin

    IPC: H01L021/20 ,  H01L029/93

    CPC classification number: B81B7/04 ,  B81B2201/0214 ,  B81B2201/0271 ,  B81B2201/036 ,  B81B2201/045 ,  B81B2203/0361 ,  B81C99/002

    Abstract: An array of nanometric dimensions consisting of two or more arms, positioned side by side, wherein the arms are of such nanometric dimensions that the beams can be moved or deformed towards or away from one another by means of a low voltage applied between the beams, whereby to produce a desired optical, electronic or mechanical effect. At nanometer scale dimensions structures previously treated as rigid become flexible, and this flexibility can be engineered since it is a direct consequence of material and dimensions. Since the electrostatic force between the two arms is inversely proportional to the square of the distance, a very considerable force will be developed with a low voltage of the order of 1-5 volts, which is sufficient to deflect the elements towards or away from one another. As preferred, the bulk of the element may be comprises an insulating material, and an upper conductive layer is applied on the upper surface, where the element is formed by a nanolithography method such as nanoimprint lithography (NIL). Alternatively the elements may be formed completely of conductive material, where the elements are formed by a CMOS metalization process.

    Abstract translation: 由两个或更多个臂并排定位的纳米尺寸阵列，其中臂具有这样的纳米尺寸，使得梁可以通过施加在梁之间的低电压而朝向或远离彼此移动或变形， 从而产生期望的光学，电子或机械效应。 在纳米尺度上，先前被刚性处理的结构变得柔性，并且可以设计出这种灵活性，因为它是材料和尺寸的直接后果。 由于两个臂之间的静电力与距离的平方成反比，所以将以1-5伏特的低电压产生非常大的力，这足以将元件偏向或远离一个 另一个。 优选地，元件的主体可以包括绝缘材料，并且上导电层被施加在上表面上，其中元件通过纳米压印光刻（NIL）的纳米光刻方法形成。 或者，元件可以完全由导电材料形成，其中元件由CMOS金属化工艺形成。

    Zero TCF thin film resonator
    114.
    发明授权
    Zero TCF thin film resonator 失效
    零TCF薄膜谐振器

    公开(公告)号：US06557419B1

    公开(公告)日：2003-05-06

    申请号：US08777652

    申请日：1996-12-31

    Applicant: William R. Herb ,  David W. Burns ,  Daniel W. Youngner

    Inventor： William R. Herb ,  David W. Burns ,  Daniel W. Youngner

    IPC: G01B716

    CPC classification number: B81B3/0072 ,  B81B2201/0271 ,  H03H9/02448 ,  H03H9/2463 ,  H03H9/2473

    Abstract: A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each material has a different thermal coefficient of expansion. The proportion of the various materials is adjusted and the specific geometries are determined so that the TCF is zero. One embodiment is a microbeam composed of two polysilicon thin films with a silicon nitride thin film inserted between the polysilicon films. The thickness of the silicon nitride film may be adjusted to trim the TCF to zero. The film of nitride instead may be placed on one side of a polysilicon film to form a beam. Dual or multiple beam resonators likewise may be made with several materials. The nitride may be placed in the shank areas which join and secure the ends of the beams. Such zero TCF beams may be incorporated in microsensor structures for measuring pressure, temperature, strain and other parameters.

    Abstract translation: 一种用于微机械传感器的多材料谐振薄膜光束，其具有零温度频率系数（TCF），其是随着温度变化的谐振频率偏移。 其中一种材料可以是多晶硅，另一种材料可以是氮化硅或氧化硅。 每种材料具有不同的热膨胀系数。 调整各种材料的比例，确定特定几何形状，使得TCF为零。 一个实施例是由两个多晶硅薄膜组成的微束，其中氮化硅薄膜插入在多晶硅膜之间。 可以调节氮化硅膜的厚度以将TCF修整为零。 氮化物膜可以放置在多晶硅膜的一侧以形成光束。 双或多束谐振器同样可以由几种材料制成。 氮化物可以放置在连接并固定梁的端部的柄部区域中。 这样的零TCF光束可以并入微传感器结构中，用于测量压力，温度，应变和其它参数。

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