中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

166 records (took 0.02 seconds)

    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits
    113.
    发明申请
    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits 有权
    在微结构中产生空气间隙的过程，特别是集成电路的空气间隙互连结构类型

    公开(公告)号：US20090280638A1

    公开(公告)日：2009-11-12

    申请号：US12434018

    申请日：2009-05-01

    Applicant: Aziz ZENASNI

    Inventor： Aziz ZENASNI

    IPC: H01L21/768

    CPC classification number: B81C1/00047 ,  B81C2201/0108 ,  B81C2201/0128 ,  H01L21/7682

    Abstract: The invention relates to a process for producing at least one air gap in a microstructure, which comprises: 1) the supply of a microstructure comprising at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 本发明涉及一种用于在微结构中产生至少一个气隙的方法，其包括：1）提供微结构，其包括填充有从温度θ1开始分解的牺牲材料的至少一个间隙，该间隙被界定在 其表面的至少一部分由无孔膜组成，其由形成基质的材料和成孔剂组成，其在温度θ2θ下分解至少20℃并分散在该孔中 矩阵; 2）在温度> =θ2但<θ1处理微结构以选择性分解成孔剂; 然后3）在温度> =θ1处理微结构以便分解牺牲材料。 应用：在微电子和微电子工业中制造用于集成电路和任何其他微结构的气隙互连结构。

    METHOD OF FABRICATING A POLYMER-BASED CAPACITIVE ULTRASONIC TRANSDUCER
    114.
    发明申请
    METHOD OF FABRICATING A POLYMER-BASED CAPACITIVE ULTRASONIC TRANSDUCER 审中-公开
    制造基于聚合物的电容式超声波传感器的方法

    公开(公告)号：US20090126183A1

    公开(公告)日：2009-05-21

    申请号：US12348452

    申请日：2009-01-05

    Applicant: Ming-Wei Chang ,  Da-Chen Pang ,  Chao-Sheng Tseng

    Inventor： Ming-Wei Chang ,  Da-Chen Pang ,  Chao-Sheng Tseng

    IPC: H04R31/00

    CPC classification number: B81B7/0012 ,  B06B1/0292 ,  B81C2201/0108 ,  Y10T29/435 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49172 ,  Y10T29/49194

    Abstract: A method of fabricating a polymer-based capacitive ultrasonic transducer, which comprises the steps of: (a) providing a substrate; (b) forming a first conductor on the substrate; (c) coating a sacrificial layer on the substrate while covering the first conductor by the same; (d) etching the sacrificial layer for forming an island while maintaining the island to contact with the first conductor; (e) coating a first polymer-based material on the substrate while covering the island by the same; (f) forming a second conductor on the first polymer-based material; (g) forming a via hole on the first polymer-based material while enabling the via hole to be channeled to the island; and (h) utilizing the via hole to etch and remove the island for forming a cavity.

    Abstract translation: 一种制造基于聚合物的电容式超声换能器的方法，包括以下步骤：（a）提供基底; （b）在所述基板上形成第一导体; （c）在衬底上涂覆牺牲层，同时覆盖第一导体; （d）蚀刻用于形成岛的牺牲层，同时保持岛与第一导体接触; （e）在衬底上涂覆第一聚合物基材料同时覆盖该岛; （f）在第一聚合物基材料上形成第二导体; （g）在第一聚合物基材料上形成通孔，同时使通孔能够引导到岛上; 和（h）利用通孔蚀刻并去除用于形成空腔的岛。

    FORMING A SACRIFICIAL LAYER IN ORDER TO REALISE A SUSPENDED ELEMENT
    115.
    发明申请
    FORMING A SACRIFICIAL LAYER IN ORDER TO REALISE A SUSPENDED ELEMENT 有权
    形成一个非常重要的层来实现一个悬挂的元素

    公开(公告)号：US20080090421A1

    公开(公告)日：2008-04-17

    申请号：US11854155

    申请日：2007-09-12

    Applicant: Fabrice Casset ,  Sofiane Soulimane

    Inventor： Fabrice Casset ,  Sofiane Soulimane

    IPC: H01L21/311

    CPC classification number: B81C1/00158 ,  B81B2203/0109 ,  B81C1/00103 ,  B81C2201/0108 ,  H01G5/011 ,  H01G5/18

    Abstract: The invention relates to a method of realization of a sacrificial layer, including the steps of: lithography of a resin deposited on a substrate in order to supply a lithographed resist pattern on a substrate zone, the zone having a given size and a given form, the pattern occupying a given volume, annealed according to a thermal cycle of the lithographed resist pattern, the method being characterised in that it includes, according to the resin, the determination of the size and of the form of said zone of the substrate, and the determination of the volume of the resin deposited on said zone so that the thermal cycle annealing supplies a profile chosen from among the following profiles: a planarising domed profile and a “double air gap” profile.

    Abstract translation: 本发明涉及一种实现牺牲层的方法，包括以下步骤：沉积在衬底上的树脂的光刻法，以便在衬底区域上提供光刻抗蚀剂图案，该区域具有给定的尺寸和给定的形式， 所述图案占据给定体积，根据所蚀刻的抗蚀剂图案的热循环退火，所述方法的特征在于，根据所述树脂，所述图案包括所述基材的所述区域的尺寸和形式的确定，以及 确定沉积在所述区域上的树脂的体积，使得热循环退火提供从以下简档中选择的轮廓：平面化圆顶轮廓和“双气隙”轮廓。

    Packaging for Micro Electro-Mechanical Systems and Methods of Fabricating Thereof
    117.
    发明申请
    Packaging for Micro Electro-Mechanical Systems and Methods of Fabricating Thereof 有权
    微机电系统的包装及其制造方法

    公开(公告)号：US20070273013A1

    公开(公告)日：2007-11-29

    申请号：US10534956

    申请日：2005-03-15

    Applicant: Paul Kohl ,  Farrokh Ayazi

    Inventor： Paul Kohl ,  Farrokh Ayazi

    IPC: H01L23/20 ,  H01L21/54

    CPC classification number: B81C1/00333 ,  B81C2201/0108 ,  B81C2203/0136 ,  B81C2203/0154 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

    Abstract: Embodiments of the present disclosure provide systems and methods for producing micro electro-mechanical device packages. Briefly described, in architecture, one embodiment of the system, among others, includes a micro electro-mechanical device formed on a substrate layer; and a thermally decomposable sacrificial structure protecting at least a portion of the micro electro-mechanical device, where the sacrificial structure is formed on the substrate layer and surrounds a gas cavity enclosing an active surface of the micro electro-mechanical device. Other systems and methods are also provided.

    Abstract translation: 本公开的实施例提供了用于生产微机电装置包装的系统和方法。 简要描述，在架构中，系统的一个实施例包括形成在基底层上的微电子机械装置; 以及可热分解的牺牲结构，其保护所述微机电装置的至少一部分，其中所述牺牲结构形成在所述基底层上并且围绕包围所述微机电装置的有效表面的气体腔。 还提供了其他系统和方法。

    Micromechanical component and method for production thereof
    119.
    发明申请
    Micromechanical component and method for production thereof 审中-公开
    微机械部件及其制造方法

    公开(公告)号：US20060270088A1

    公开(公告)日：2006-11-30

    申请号：US10543441

    申请日：2003-09-23

    Applicant: Frank Fischer ,  Markus Lutz

    Inventor： Frank Fischer ,  Markus Lutz

    IPC: H01L21/00 ,  H01L29/84

    CPC classification number: G01L9/0042 ,  B81B3/0081 ,  B81B2201/0264 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/0108

    Abstract: An epitaxial layer having monocrystalline and polycrystalline silicon grown side by side is deposited on a substrate, a region being exposed as a vertically movable polycrystalline diaphragm, especially for a pressure sensor, by etching. The poly/mono transition regions on both sides of the diaphragm each nave an oblique profile such that the monocrystalline silicon extends into the diaphragm region in the form of an overhang above the polycrystalline silicon. Piezo elements are implanted in the overhang.

    Abstract translation: 将具有并排生长的单晶硅和多晶硅的外延层沉积在基板上，通过蚀刻将区域暴露为可垂直移动的多晶膜，特别是用于压力传感器。 膜片两侧的多晶硅/单相转变区域分别呈倾斜分布，使得单晶硅以多晶硅上方的突出形式延伸到膜片区域中。 压电元件植入突出端。

Patent Agency Ranking