公开(公告)号：US20150311024A1

公开(公告)日：2015-10-29

申请号：US14261246

申请日：2014-04-24

Applicant: NXP B.V.

Inventor： Klaus Reimann ,  Olaf Wunnicke ,  Michael in 't Zandt

IPC: H01J9/02 ,  H01L27/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/308 ,  H01J9/24 ,  H01J19/24 ,  H01J19/54 ,  H01J21/04 ,  H01L27/0248

Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.

Abstract translation: 用于形成用于静电放电装置的场致发射二极管的方法的实施例包括形成第一电极，牺牲层和第二电极。 牺牲层分离第一和第二电极。 该方法还包括通过去除牺牲层在第一和第二电极之间形成空腔。 腔分离第一和第二电极。 该方法还包括在形成第一和第二电极之后，通过至少一个进入孔，在第一和第二电极中的至少一个上沉积电子发射材料。 进入孔远离第一和第二电极上的电子发射位置。

公开(公告)号：US20150206691A1

公开(公告)日：2015-07-23

申请号：US14599992

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  DE-JIE LI ,  CHUN-HAI ZHANG ,  DUAN-LIANG ZHOU ,  BING-CHU DU ,  SHOU-SHAN FAN

IPC: H01J29/02 ,  H01J31/12 ,  H01J29/18

CPC classification number: H01J29/18 ,  H01J1/308 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of second electrodes intersected with a number of first electrodes to define a number of intersections. The first electrode includes a carbon nanotube layer and a semiconductor layer coated on the carbon nanotube layer. An insulating layer is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the semiconductor layer is sandwiched between the insulating layer and the carbon nanotube layer.

Abstract translation: 电子发射装置包括与多个第一电极相交的多个第二电极，以限定多个交点。 第一电极包括碳纳米管层和涂覆在碳纳米管层上的半导体层。 在每个交叉点的每一个处，绝缘层夹在第一电极和第二电极之间，其中半导体层夹在绝缘层和碳纳米管层之间。

公开(公告)号：US08814622B1

公开(公告)日：2014-08-26

申请号：US13298448

申请日：2011-11-17

Applicant: Paul J. Resnick ,  Eric Langlois

Inventor： Paul J. Resnick ,  Eric Langlois

IPC: H01J9/04 ,  H01J3/02 ,  H01J9/02

CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/36 ,  H01J3/022 ,  H01J9/025 ,  H01J9/14 ,  H01J19/24 ,  H01J19/32 ,  H01J19/46 ,  H01J19/54 ,  H01J21/20

Abstract: Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Abstract translation: 公开了一种封装微型二极管及其制造方法。 该方法包括在衬底中形成多个柱，其中相应的尖端设置在柱的第一端，尖端限定二极管的阴极; 在基板上设置牺牲氧化物层，多个柱和各个尖端; 在柱周围的牺牲氧化物层中形成相应的沟槽; 在所述牺牲氧化物层中形成开口以暴露所述尖端的一部分; 在所述开口和所述衬底的表面上沉积导电材料以形成所述二极管的阳极; 并去除牺牲氧化物层。

公开(公告)号：US20140091716A1

公开(公告)日：2014-04-03

申请号：US14021510

申请日：2013-09-09

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Lowell L. Wood, JR.

IPC: H01J19/38

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J19/38 ,  H01J29/02 ,  H01J29/481 ,  H01J45/00 ,  H01J2201/3048 ,  H01J2201/319

Abstract: A field emission device is configured as a heat engine.

Abstract translation: 场发射装置被配置为热发动机。

公开(公告)号：US07585687B2

公开(公告)日：2009-09-08

申请号：US10932695

申请日：2004-09-01

Applicant: Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

Inventor： Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

IPC: H01L21/66

CPC classification number: B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

Abstract translation: 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

公开(公告)号：US20070272929A1

公开(公告)日：2007-11-29

申请号：US10580346

申请日：2004-11-17

Applicant: Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01L29/16 ,  H01L21/00

CPC classification number: H01L29/1602 ,  H01J1/308

Abstract: The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor comprises a diamond substrate, and a diamond semiconductor formed on a main surface thereof and turned out to be n-type. The diamond semiconductor exhibits a carrier concentration (electron concentration) negatively correlated with temperature in a part of a temperature region in which it is turned out to be n-type, and a Hall coefficient positively correlated with temperature. The diamond n-type semiconductor having such a characteristic is obtained, for example, by forming a diamond semiconductor doped with a large amount of a donor element while introducing an impurity other than the donor element onto the diamond substrate.

Abstract translation: 本发明涉及一种金刚石n型半导体，其中载体浓度的变化量在宽的温度范围内完全降低。 金刚石n型半导体包括金刚石基板和形成在其主表面上的金刚石半导体，并被证明为n型。 金刚石半导体表现出在其中显示为n型的温度区域的一部分中的载流子浓度（电子浓度）与温度负相关，并且霍尔系数与温度呈正相关。 具有这种特性的金刚石n型半导体例如通过形成掺杂有大量施主元素的金刚石半导体，同时将施主元素以外的杂质引入到金刚石基板上而获得。

公开(公告)号：US07057333B1

公开(公告)日：2006-06-06

申请号：US09926489

申请日：2000-05-12

Applicant: Binh Vu Thien ,  Jean-Pierre Dupin ,  Paul Thevenard

Inventor： Binh Vu Thien ,  Jean-Pierre Dupin ,  Paul Thevenard

IPC: H01J1/30

CPC classification number: H01J1/308

Abstract: The method of the invention for extracting electrons in a vacuum consists in: making a cathode presenting at least one junction (9) between a metal (7) acting as an electron reservoir and an n-type semiconductor (8) possessing a surface potential barrier with a height of a few tenths of an electron volt, and presenting thickness lying in the range 1 nm to 20 nm; injecting electrons through the metal/semiconductor junction (9) to create a space charge in the semiconductor (8) sufficient to lower the surface potential barrier of the semiconductor to a value that is less than or equal to 1 eV relative to the Fermi level of the metal (7); and using the bias source creating an electric field in the vacuum to control the height of the surface potential barrier (Vp) of the n-type semiconductor in order to control the emission of the electron flux towards the anode.

Abstract translation: 用于在真空中提取电子的本发明的方法在于：制造阴极，其在充当电子储存器的金属（7）和具有表面电势势垒的n型半导体（8）之间呈现至少一个结（9） 高度为电子伏特的几十分之一，呈现在1nm至20nm范围内的厚度; 通过金属/半导体结（9）注入电子以在半导体（8）中产生足以将半导体的表面势垒降低到相对于费米能级的1eV小于或等于1eV的值的空间电荷 金属（7）; 并且使用偏压源在真空中产生电场，以控制n型半导体的表面势垒（V SUB）的高度，以便控制电子通量向着 阳极。

公开(公告)号：US06989628B2

公开(公告)日：2006-01-24

申请号：US11083680

申请日：2005-03-16

Applicant: Henryk Birecki ,  Vu Thien Binh

Inventor： Henryk Birecki ,  Vu Thien Binh

IPC: H01J1/62

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

Abstract translation: 公开了具有电耦合到发射极和提取器电极的发射极，提取器电极和平面发射极发射层的场发射平面电子发射器件。 平面电子发射器被配置为优先于其外部区域在发射层的中心区域偏置电子发射。 提供该偏置的一个结构实例通过制造平面发射器发射层来实现，使得其具有比在平面发射极发射层的内部部分更深的深度的外周边，这减少了在外周边处的电子束发射， 在发射电极和提取电极之间施加电场。 电场在内部部分比在外周边以更高的速率将发射电子从平面发射体发射层的表面吸引到提取器电极。 平面电子发射器件还包括电耦合到平面电子发射器的聚焦电极。

公开(公告)号：US06927423B2

公开(公告)日：2005-08-09

申请号：US10443970

申请日：2003-05-23

Applicant: Nobuhiko Sawaki ,  Yoshio Honda

Inventor： Nobuhiko Sawaki ,  Yoshio Honda

IPC: H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01L21/205 ,  H01L29/22

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.

Abstract translation: 在开口部露出的硅基板的主面上形成具有开口部的掩模层。 然后，在开口中由第一半导体氮化物形成六角锥形岛状部分，以完成半导体元件结构。

公开(公告)号：US20030128647A1

公开(公告)日：2003-07-10

申请号：US10043376

申请日：2002-01-09

Inventor： Henryk Birecki ,  Vu Thien Binh

IPC: G11B009/10

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

Abstract translation: 公开了具有电耦合到发射极和提取器电极的发射极，提取器电极和平面发射极发射层的场发射平面电子发射器件。 平面电子发射器被配置为优先于其外部区域在发射层的中心区域偏置电子发射。 提供该偏置的一个结构实例通过制造平面发射器发射层来实现，使得其具有比在平面发射极发射层的内部部分更深的深度的外周边，这减少了在外周边处的电子束发射， 在发射电极和提取电极之间施加电场。 电场在内部部分比在外周边以更高的速率将发射电子从平面发射体发射层的表面吸引到提取器电极。 平面电子发射器件还包括电耦合到平面电子发射器的聚焦电极。