Abstract:
The present invention provides an electron microscope device 1, comprising a scanning electron microscope 2 and an optical microscope 3, wherein the scanning electron microscope has scanning means 10 for scanning an electron beam and an electron detector 12 for detecting electrons issued from a specimen 8 scanned by the electron beam, and the scanning electron microscope acquires a scanning electron image based on a detection result from the electron detector, wherein the optical microscope projects an illumination light to the specimen, receives a reflection light from the specimen and acquires an optical image, and wherein an optical axis 7 of the scanning electron microscope crosses an optical axis 6 of the optical microscope at a point of observation of the specimen, wherein the scanning means projects the electron beam for scanning with a scanning width wider than a width of a scanning area, the optical microscope projects an illumination light and acquires an optical image in an overrunning portion where the electron beam is projected beyond the scanning area, and the scanning electron microscope acquires a scanning electron image based on electrons issued when the electron beam scans over the scanning area.
Abstract:
A charged particle beam apparatus includes: a correction image acquisition part 52 for making a detector 20 acquire items of two-dimensional image data at different focal positions; a directional differentiation operation part 53 for obtaining directional derivative values in a plurality of directions for each of the items of two-dimensional image data at different focal positions; an aberration parameter calculation part 54 for obtaining aberration parameters according to previously determined methods by using the directional derivative values in a plurality of directions for each of the items of two-dimensional image data; an aberration correction value calculation part 55 for obtaining correction values for aberrations by using the aberration parameters; and a control part 56 for setting the correction values in a correction optical system control means to make an aberration corrector 16 correct the aberrations.
Abstract:
The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
Abstract:
The present invention provides a semiconductor pattern shape evaluating apparatus using a critical dimension SEM, which eliminates the necessity of data conversion corresponding to each process of semiconductor manufacturing conventionally required; controls possessed data integratedly; can select data effective for use in each process from the possessed data easily; if the shape of formed pattern changes with time, can create a photographing recipe which enables stable measurement by correcting the photographing recipe based on time-series data. Specifically, the semiconductor pattern shape evaluating apparatus correlates coordinate systems among diversified data to control the diversified data stored in a database integratedly, selects part or all of the diversified data arbitrarily and creates a photographing recipe for observing a semiconductor pattern with a critical dimension SEM using selected data.
Abstract:
A charged particle beam apparatus in accordance with one preferred form of this invention includes an irradiation unit for irradiating a charged particle beam, an instrumentation unit which performs instrumentation of a reflection signal from a mark as obtained by scanning the mark while irradiating the charged particle beam onto the mark, and a measurement unit which uses an approximation equation defined by use of a prespecified mark shape function and an error function to perform the fitting of a waveform obtained based on the reflection signal and which measures beam resolution which becomes a parameter of the error function from the waveform obtained based on the reflection signal.
Abstract:
A method and an apparatus for calculating a scan signal so that the scan region becomes a scan region which is based on magnification ratio between desired magnification in a scan-line interval direction and desired magnification in a scan-line direction, and performing a calculation for rotating the scan direction with respect to the scan signal in order to suppress a distortion which is caused to occur when the technology where the scan direction of a charged particle beam is rotated is applied to the technology where the charged particle beam is scanned such that the scan-line interval is enlarged.
Abstract:
Method and apparatus have a film including a first surface to hold the liquid sample thereon, a vacuum chamber for reducing the pressure of an ambient in contact with a second surface of the film, primary beam irradiation means connected with the vacuum chamber and irradiating the sample with a primary beam via the film, signal detection means for detecting a secondary signal produced from the sample in response to the beam irradiation, a partitioning plate for partially partitioning off the space between the film and the primary beam irradiation means in the vacuum chamber, and a vacuum gauge for detecting the pressure inside the vacuum chamber.
Abstract:
Disclosed herein is a scanning electron microscope having a function for positioning an object point of an objective lens at a defined position even under an electronic optical condition in which it is difficult to accurately control the position of the object point of the objective lens. A deflector is provided to deflect an electron beam in order to detect the object point and located at a desired position of the object point of the objective lens. The deflector is not used to scan a sample with the electron beam. The scanning electron microscope has a function for automatically adjusting the position of the object point to ensure that the object point of the objective lens is located at the position of the object point detection deflector by using a characteristic in which a displacement of an image by the deflector is minimal when the object point is located at the position of the deflector.
Abstract:
An electron beam device includes an electron gun section having an internal space kept at an ultrahigh vacuum level for generating a primary electron beam, a mirror section having an internal space kept at a vacuum level lower than that of the electron gun section for scanning a specimen with an electron probe of the primary electron beam generated in the electron gun section and focused on the specimen, a differential exhaust diaphragm for providing communication in internal space between the electron gun section and the mirror section and passing the primary electron beam, and a control section for controlling respective constituent elements in the electron beam device. A diaphragm mechanism having a plurality of different diaphragm aperture diameters is provided between a second anode and a first condenser lens.
Abstract:
The present invention provides a method of observing a specimen in a field of view of an electron microscope comprising the acts of illuminating the specimen with an electron beam having a first angle and forming a first transmission image of the specimen in the field of view and adjusting the electron beam to a second angle and forming a second transmission image of the specimen in the field of view and calculating a degree of coincidence between the first and second transmission images.