Liquid metal wetting of micro-fabricated charge-emission structures
    112.
    发明授权
    Liquid metal wetting of micro-fabricated charge-emission structures 失效
    微电子发射结构的液态金属润湿

    公开(公告)号:US08138665B2

    公开(公告)日:2012-03-20

    申请号:US12306264

    申请日:2007-07-09

    Abstract: Described is a micro-fabricated charged particle emission device including a substrate and a plurality of charged particle emission sites formed in the substrate. A path extends between each emission site and a source of liquid metal. Each path is coated with a wetting layer of non-oxidizing metal for wetting the liquid metal. Exemplary non-oxidizing metals that may be used to provide the wetting layer include gold and platinum. The wetting layer is sufficiently thin such that some liquid metal is able to flow to each emission site despite any chemical interaction between the liquid metal and the non-oxidizing metal of the wetting layer.

    Abstract translation: 描述了一种微制造的带电粒子发射器件,其包括衬底和形成在衬底中的多个带电粒子发射部位。 一条路径在每个发射部位和液态金属源之间延伸。 每个路径涂有非氧化金属的润湿层,用于润湿液态金属。 可用于提供润湿层的示例性非氧化性金属包括金和铂。 润湿层足够薄,使得尽管液态金属和润湿层的非氧化金属之间存在任何化学相互作用,但是一些液态金属能够流到每个发射部位。

    Deep ultraviolet semiconductor optical device
    113.
    发明授权
    Deep ultraviolet semiconductor optical device 有权
    深紫外半导体光学器件

    公开(公告)号:US08120238B2

    公开(公告)日:2012-02-21

    申请号:US12675989

    申请日:2008-09-03

    Applicant: Takashi Kita

    Inventor: Takashi Kita

    CPC classification number: C09K11/7706 C09K11/0883 H01J63/04 H01J63/06

    Abstract: A large-area and high-luminance deep ultraviolet light source device is provided under circumstances where the scales of existing mercury lamps used as ultraviolet light sources cannot be reduced and light-emitting diodes of 365 nm or less do not reach the practical level. The deep ultraviolet light source device comprises at least an anode substrate having an ultraviolet phosphor thin film doped with rare-earth metal ions such as gadolinium (Gd) ions and containing with aluminum nitride as the host material, a cathode substrate having a field electron emission material thin film, a spacer for holding the anode substrate and the cathode substrate opposite to each other and maintaining the space between the substrates in a vacuum atmosphere, and a voltage circuit for applying an electric field to the space between the anode substrate and the cathode substrate. Light is emitted by injecting electrons from the field electron emission material thin film into the ultraviolet phosphor thin film by applying the electric field to the space between the substrates and maintaining the space between the anode substrate and the cathode substrate as a vacuum channel region.

    Abstract translation: 在不能减少用作紫外光源的现有汞灯的鳞片的情况下,提供了大面积,高亮度的深紫外光源装置,365nm以下的发光二极管未达到实用的水平。 深紫外光源装置至少包括具有掺杂有稀土金属离子如钆(Gd)离子并且以氮化铝作为主体材料的稀土金属离子的紫外线荧光体薄膜的阳极基板,具有场电子发射 材料薄膜,用于保持阳极基板和阴极基板彼此相对并在真空气氛中保持基板之间的空间的间隔件和用于向阳极基板和阴极之间的空间施加电场的电压电路 基质。 通过将电场施加到基板之间的空间并将阳极基板和阴极基板之间的空间保持为真空沟道区域,将电子从场致电子发射材料薄膜注入到紫外荧光体薄膜中来发射光。

    Thermionic electron emission device
    117.
    发明授权
    Thermionic electron emission device 有权
    热电子发射装置

    公开(公告)号:US08072127B2

    公开(公告)日:2011-12-06

    申请号:US12288864

    申请日:2008-10-23

    CPC classification number: H01J1/14 H01J9/04 H01J31/127 H01J2201/196

    Abstract: A thermionic electron emission device includes an insulating substrate, and one or more grids located thereon. The one or more grids include(s) a first, second, third and fourth electrode down-leads located on the periphery thereof, and a thermionic electron emission unit therein. The first and second electrode down-leads are parallel to each other. The third and fourth electrode down-leads are parallel to each other. The first and second electrode down-leads are insulated from the third and fourth electrode down-leads. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The first electrode and the second electrode are separately located and electrically connected to the first electrode down-lead and the third electrode down-lead respectively. Wherein the thermionic electron emitter includes a carbon nanotube film structure.

    Abstract translation: 热电子发射器件包括绝缘衬底和位于其上的一个或多个栅极。 一个或多个栅格包括位于其周边上的第一,第二,第三和第四电极引线以及其中的热电子发射单元。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 第一和第二电极下引线与第三和第四电极下引线绝缘。 热电子发射单元包括第一电极,第二电极和热离子电子发射体。 第一电极和第二电极分别位于第一电极下引线和第三电极引线下电连接。 其中,热离子电子发射体包括碳纳米管膜结构。

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