公开(公告)号：US20230411147A1

公开(公告)日：2023-12-21

申请号：US18334058

申请日：2023-06-13

Applicant: ASM IP Holding, B.V.

Inventor： Jihee Jeon ,  Timothee Blanquart ,  Viljami Pore ,  Charles Dezelah

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02214 ,  H01J37/32357 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01J2237/332 ,  H01J2237/2001

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

公开(公告)号：US20230407480A1

公开(公告)日：2023-12-21

申请号：US18242598

申请日：2023-09-06

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III ,  Todd Robert Dunn

IPC: C23C16/52 ,  G01F23/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B25/16 ,  C23C16/458

CPC classification number: C23C16/52 ,  G01F23/0007 ,  C23C16/4408 ,  C23C16/45525 ,  C30B25/14 ,  C30B25/165 ,  C23C16/4583

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

公开(公告)号：US20230407465A1

公开(公告)日：2023-12-21

申请号：US18209640

申请日：2023-06-14

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida

IPC: C23C16/36 ,  H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/36 ,  H01L21/022 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  C23C16/325 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/45529 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219

Abstract: A method of forming a silicon oxycarbonitride layer on a substrate is disclosed. An exemplary method includes forming a layer comprising SiOC and forming a layer comprising SiCN, which together form the silicon oxycarbonitride layer.

公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.

公开(公告)号：US20230393569A1

公开(公告)日：2023-12-07

申请号：US18328398

申请日：2023-06-02

Applicant: ASM IP Holding, B.V.

Inventor： Wataru Kobayashi

IPC: G05B23/02 ,  G05B19/05

CPC classification number: G05B23/0224 ,  G05B19/058 ,  G05B2223/06 ,  G05B2219/14006

Abstract: Examples of a diagnostic tool include a LAN port, a human-machine interface (HMI), and a CPU configured to transmit a command issued from the HMI by a user to a connection destination of the LAN port, wherein the diagnostic tool is configured to be incapable of wireless communication.

公开(公告)号：US20230386874A1

公开(公告)日：2023-11-30

申请号：US18324411

申请日：2023-05-26

Applicant: ASM IP Holding, B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

IPC: H01L21/673 ,  H01L21/687 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/67316 ,  H01L21/68742 ,  H01L21/02293 ,  H01L21/3213

Abstract: A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20230383402A1

公开(公告)日：2023-11-30

申请号：US18233065

申请日：2023-08-11

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Carl Louis White ,  Mohith E. Verghese ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: C23C16/448 ,  H01L21/67

CPC classification number: C23C16/4485 ,  H01L21/67115 ,  H01L21/67103 ,  H01L21/67098

Abstract: Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

公开(公告)号：US11830731B2

公开(公告)日：2023-11-28

申请号：US17074887

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Eric James Shero ,  Carl Louis White ,  Todd Robert Dunn ,  William George Petro ,  Jereld Lee Winkler ,  Aniket Chitale

IPC: C23C16/455 ,  H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45544 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

公开(公告)号：US11823876B2

公开(公告)日：2023-11-21

申请号：US17013386

申请日：2020-09-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee ,  WonKi Jeong

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32449 ,  H01J37/32642 ,  H01J37/32669

Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.