Abstract:
Apparatuses relating generally to a substrate are disclosed. In such an apparatus, first wire bond wires (“first wires”) extend from a surface of the substrate. Second wire bond wires (“second wires”) extend from the surface of the substrate. The first wires and the second wires are external to the substrate. The first wires are disposed at least partially within the second wires. The first wires are of a first height. The second wires are of a second height greater than the first height for coupling of at least one electronic component to the first wires at least partially disposed within the second wires.
Abstract:
A method for simultaneously making a plurality of microelectronic packages by forming an electrically conductive redistribution structure along with a plurality of microelectronic element attachment regions on a carrier. The attachment regions being spaced apart from one another and overlying the carrier. The method also including the formation of conductive connector elements between adjacent attachment regions. Each connector element having the first or second end adjacent the carrier and the remaining end at a height of the microelectronic element. The method also includes forming an encapsulation over portions of the connector elements and subsequently singulating the assembly, into microelectronic units, each including a microelectronic element. The surface of the microelectronic unit, opposite the redistribution structure, having both the active face of the microelectronic element and the free ends of the connector elements so that both are available for connection with a component external to the microelectronic unit.
Abstract:
A microelectronic assembly includes a stack of microelectronic elements, e.g., semiconductor chips, each having a front surface defining a respective plane of a plurality of planes. A leadframe interconnect joined to a contact at a front surface of each chip may extend to a position beyond the edge surface of the respective microelectronic element. The chip stack is mounted to support element at an angle such that edge surfaces of the chips face a major surface of the support element that defines a second plane that is transverse to, i.e., not parallel to the plurality of parallel planes. The leadframe interconnects are electrically coupled at ends thereof to corresponding contacts at a surface of the support element.
Abstract:
A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.
Abstract:
Stacked microelectronic packages comprise microelectronic elements each having a contact-bearing front surface and edge surfaces extending away therefrom, and a dielectric encapsulation region contacting an edge surface. The encapsulation defines first and second major surfaces of the package and a remote surface between the major surfaces. Package contacts at the remote surface include a first set of contacts at positions closer to the first major surface than a second set of contacts, which instead are at positions closer to the second major surface. The packages are configured such that major surfaces of each package can be oriented in a nonparallel direction with the major surface of a substrate, the package contacts electrically coupled to corresponding contacts at the substrate surface. The package stacking and orientation can provide increased packing density.
Abstract:
Die (110) are attached to an interposer (420), and the interposer/die assembly is placed into a lid cavity (510). The lid (210) is attached to the top of the assembly, possibly to the encapsulant (474) at the top. The lid's legs (520) surround the cavity and extend down below the top surface of the interposer's substrate (420S), possibly to the level of the bottom surface of the substrate or lower. The legs (520) may or may not be attached to the interposer/die assembly. In fabrication, the interposer wafer (420SW) has trenches (478) which receive the lid's legs during the lid placement. The interposer wafer is later thinned to remove the interposer wafer portion below the legs and to dice the interposer wafer. The thinning process also exposes, on the bottom, conductive vias (450) passing through the interposer substrate. Other features are also provided.
Abstract:
An apparatus relating generally to a die stack is disclosed. In such an apparatus, a substrate is included. A first bond via array includes first wires each of a first length extending from a first surface of the substrate. An array of bump interconnects is disposed on the first surface. A die is interconnected to the substrate via the array of bump interconnects. A second bond via array includes second wires each of a second length different than the first length extending from a second surface of the die.
Abstract:
An apparatus relates generally to a microelectronic device. In such an apparatus, a first substrate has a first surface with first interconnects located on the first surface, and a second substrate has a second surface spaced apart from the first surface with a gap between the first surface and the second surface. Second interconnects are located on the second surface. Lower surfaces of the first interconnects and upper surfaces of the second interconnects are coupled to one another for electrical conductivity between the first substrate and the second substrate. A conductive collar is around sidewalls of the first and second interconnects, and a dielectric layer is around the conductive collar.
Abstract:
In one embodiment, a method for making a 3D Metal-Insulator-Metal (MIM) capacitor includes providing a substrate having a surface, forming an array of upstanding rods or ridges on the surface, depositing a first layer of an electroconductor on the surface and the array of rods or ridges, coating the first electroconductive layer with a layer of a dielectric, and depositing a second layer of an electroconductor on the dielectric layer. In some embodiments, the array of rods or ridges can be made of a photoresist material, and in others, can comprise bonded wires.
Abstract:
An image sensor device, as well as methods therefor, is disclosed. This image sensor device includes a substrate having bond pads. The substrate has a through substrate channel defined therein extending between a front side surface and a back side surface thereof. The front side surface is associated with an optically-activatable surface. The bond pads are located at or proximal to the front side surface aligned for access via the through substrate channel. Wire bond wires are bonded to the bond pads at first ends thereof extending away from the bond pads with second ends of the wire bond wires located outside of an opening of the channel at the back side surface. A molding layer is disposed along the back side surface and in the through substrate channel. A redistribution layer is in contact with the molding layer and interconnected to the second ends of the wire bond wires.