公开(公告)号：US20110309553A1

公开(公告)日：2011-12-22

申请号：US13098867

申请日：2011-05-02

Applicant: Michael A. HUFF

Inventor： Michael A. HUFF

IPC: B29B13/08

CPC classification number: B23K28/02 ,  B23K17/00 ,  B23K26/032 ,  B23K26/0624 ,  B23K26/083 ,  B23K26/1224 ,  B23K26/348 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/30 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52 ,  B81C2201/0143 ,  B81C2900/00 ,  H01J37/3056 ,  H01J2237/31713 ,  H01J2237/31749 ,  Y10S977/84 ,  Y10S977/888 ,  Y10S977/889 ,  Y10S977/901

Abstract: A system and method are disclosed for the precision fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Microsytems, Nanosystems, Photonics, 3-D integration, heterogeneous integration, and Nanotechology devices and structures. The disclosed system and method can also be used in any fabrication technology to increase the precision and accuracy of the devices and structures being made compared to conventional means of implementation. A platform holds and moves a substrate to be machined during machining and a plurality of lasers and/or ion beams are provided that are capable of achieving predetermined levels of machining resolution and precision and machining rates for a predetermined application. The plurality of lasers and/or ion beams comprises a plurality of the same type of laser and/or ion beam. Alternatively, a close-loop control system can be used with one laser or ion beam that is controlled and operated by the close-loop control system so as to achieve the predetermined levels of machining resolution and precision and machining rates for the predetermined application.

Abstract translation: 公开了一种用于微机电系统（MEMS），纳米机电系统（NEMS），微型模型，纳米系统，光子学，3-D集成，异构集成和纳米技术装置和结构的精密制造的系统和方法 。 所公开的系统和方法也可以用于任何制造技术，以增加与常规实施方式相比正在制造的装置和结构的精度和精度。 平台在加工过程中保持和移动待加工的基板，并且提供多个激光和/或离子束，其能够实现预定应用的预定水平的加工分辨率和精度和加工速率。 多个激光器和/或离子束包括多个相同类型的激光和/或离子束。 或者，可以使用由闭环控制系统控制和操作的一个激光器或离子束来使用闭环控制系统，以实现预定应用的预定级别的加工分辨率和精度和加工速率。

公开(公告)号：US07919005B2

公开(公告)日：2011-04-05

申请号：US11659109

申请日：2006-05-23

Applicant: Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

Inventor： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC: C23F1/00 ,  H01L21/302

CPC classification number: C03B11/082 ,  B81C1/00531 ,  B81C2201/0143 ,  C03B11/084 ,  C03B2215/07 ,  C03B2215/412 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  G02B6/136 ,  Y02P40/57 ,  C04B41/0054 ,  C04B35/56

Abstract: A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.

Abstract translation: 通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

公开(公告)号：US20100055821A1

公开(公告)日：2010-03-04

申请号：US12462582

申请日：2009-08-05

Applicant: Johannes Bühler ,  Felix Mayer ,  Matthias Streiff ,  René Hummel ,  Robert Sunier

Inventor： Johannes Bühler ,  Felix Mayer ,  Matthias Streiff ,  René Hummel ,  Robert Sunier

IPC: H01L21/78 ,  H01L21/02

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00801 ,  B81C2201/0143 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.

Abstract translation: 差压传感器包括布置在半导体衬底上的腔上的膜。 盖层布置在装置的顶侧，并且包括用于提供进入膜的顶侧的进入开口。 通道从腔体横向延伸并与孔相交。 该孔通过从基底的底侧的激光钻孔形成并且提供进入膜的底侧的通路。 孔贯穿基底并任选地插入盖层。

公开(公告)号：US20090166562A1

公开(公告)日：2009-07-02

申请号：US12308019

申请日：2007-06-07

Applicant: Micah James Atkin

Inventor： Micah James Atkin

IPC: A61N5/00

CPC classification number: B23K26/0093 ,  B23K26/0613 ,  B23K26/0676 ,  B23K26/40 ,  B23K2103/172 ,  B81B2201/058 ,  B81C1/00492 ,  B81C2201/0143 ,  F16K99/0001 ,  F16K99/003 ,  F16K99/0057 ,  F16K2099/0073 ,  F16K2099/0086

Abstract: A method an apparatus for manufacturing a microfluidic device (10) is disclosed in which a laser is used to remove selected portions of one of the layers that make up the device. The portion of the layer may be removed before the layer is amalgamated with other layers making up the device, or the portion may be removed after the layers have been bonded together. The laser beam used to accomplish removal is a combination of at least two laser beams (3, 4), one of which (3) may be a continuous beam to form a melt of the portion to be removed, the other (4) being pulsed or modulated in some way to periodically induce shockwaves which remove the portion. The laser beams use at least one part (5, 8, 9) of the same alignment system.

Abstract translation: 公开了一种用于制造微流体装置（10）的装置，其中使用激光来去除构成装置的层之一的所选部分。 在层与组合该器件的其它层合并之前，该层的部分可被去除，或者在层已经结合在一起之后该部分可被去除。 用于完成去除的激光束是至少两个激光束（3,4）的组合，其中一个激光束（3）可以是连续的光束以形成待除去部分的熔体，另一个（4）为 以某种方式脉冲或调制以周期性地诱导移除部分的冲击波。 激光束使用相同对准系统的至少一个部分（5,8,9）。

公开(公告)号：US07323657B2

公开(公告)日：2008-01-29

申请号：US10911071

申请日：2004-08-03

Applicant: Chen-Hsiung Cheng

Inventor： Chen-Hsiung Cheng

IPC: B23K26/38 ,  B23K26/03 ,  G02B7/04

CPC classification number: B81C1/00492 ,  B23K26/0624 ,  B23K26/361 ,  B81C2201/0143 ,  G01Q60/18 ,  G01Q80/00 ,  Y10S977/851

Abstract: A method for manufacturing a microstructure device using a near field scanning optical microscope (NSOM) laser micromachining system. A microstructure device preform, including an existing feature, is provided. The NSOM probe tip is scanned over a portion of the preform selected such that a plurality of scan lines cross the existing feature. Scanned locations of the existing feature in at least two scan lines are determined. The orientation of the existing feature is determined based on the scanned locations and the shape of the existing feature. At least one expected machining location in a subsequent scan line is determined based on the shape and orientation of the existing feature. The micro-machining laser is pulsed as the NSOM probe is scanned through the expected machining location(s) during the subsequent scan lines to form at least one fine feature on the microstructure device preform, thus, completing the microstructure device.

Abstract translation: 一种使用近场扫描光学显微镜（NSOM）激光微加工系统制造微结构器件的方法。 提供了包括现有特征的微结构器件预制件。 在选定的预成型件的一部分上扫描NSOM探针针头，使得多条扫描线与现有特征交叉。 确定至少两条扫描线中现有特征的扫描位置。 现有特征的方位根据已扫描的位置和现有特征的形状来确定。 基于现有特征的形状和取向来确定后续扫描线中的至少一个预期加工位置。 当在随后的扫描线期间通过预期的加工位置扫描NSOM探针以在微结构器件预制件上形成至少一个精细特征时，微加工激光器被脉冲，从而完成微结构器件。

公开(公告)号：US07214327B2

公开(公告)日：2007-05-08

申请号：US10517764

申请日：2003-06-27

Applicant: Lee Chen ,  Audunn Ludviksson

Inventor： Lee Chen ,  Audunn Ludviksson

IPC: C23F1/02

CPC classification number: C23F1/12 ,  B81C1/00492 ,  B81C2201/0143 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76838

Abstract: A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

Abstract translation: 用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。 本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370） （390）。 本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

公开(公告)号：US20070078623A1

公开(公告)日：2007-04-05

申请号：US11240756

申请日：2005-09-30

Applicant: Chen-Hsiung Cheng

Inventor： Chen-Hsiung Cheng

IPC: G06F15/00

CPC classification number: B23K26/04 ,  B81C1/00626 ,  B81C2201/0143

Abstract: A method for generating a surface profile of a microstructure. The profile is processed to determine positions of at least two edges and an approximate center point of the profiled surface. Segments of points on the determined profile are fit to a straight line centered at the approximate center point. A standard deviation of the fitted points is measured. The length and position of the segment are varied until a minimum standard deviation is determined and the process is repeated for segments having different lengths. The point is determined from the longest segment having a standard deviation approximately equal to the minimum standard deviation of all of the segment lengths.

Abstract translation: 一种用于产生微结构的表面轮廓的方法。 处理轮廓以确定至少两个边缘的位置和成型表面的近似中心点。 所确定的轮廓上的点的分段适合以大致中心点为中心的直线。 测量拟合点的标准偏差。 片段的长度和位置是变化的，直到确定最小标准偏差，并且针对具有不同长度的片段重复该过程。 该点由具有大致等于所有段长度的最小标准偏差的标准偏差的最长段确定。

公开(公告)号：US20060231774A1

公开(公告)日：2006-10-19

申请号：US10547873

申请日：2004-03-05

Applicant: Arnoldus Storm ,  Hendrik Zandbergen

Inventor： Arnoldus Storm ,  Hendrik Zandbergen

IPC: A61N5/00

CPC classification number: G01N33/48721 ,  B81B1/004 ,  B81B2203/0127 ,  B81C1/00087 ,  B81C2201/0143 ,  H01J37/31

Abstract: The invention relates to a method for manufacturing nanometer-scale apertures, wherein, in an object, in a conventional manner, at least one aperture is provided with a nanometer-scale surface area, after which, by means of an electron beam, energy is supplied to at least the edge of said at least one aperture, such that the surface area of the respective aperture is adjusted, wherein the surface area of the aperture is controlled during adjustment and the supply of energy is regulated on the basis of the surface area change.

Abstract translation: 本发明涉及一种制造纳米尺度孔径的方法，其中在一个目的中，以常规方式，至少一个开口具有纳米级的表面积，之后借助于电子束，能量是 供应到所述至少一个孔的至少边缘，使得调节相应孔的表面积，其中在调节期间控制孔的表面积，并且基于表面积调节能量供应 更改。

公开(公告)号：US20050224456A1

公开(公告)日：2005-10-13

申请号：US10517764

申请日：2003-06-27

Applicant: Lee Chen ,  Audunn Ludviksson

Inventor： Lee Chen ,  Audunn Ludviksson

IPC: B44C1/22 ,  B81C1/00 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C23F1/12 ,  B81C1/00492 ,  B81C2201/0143 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76838

Abstract: A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

Abstract translation: 用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。 本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370） （390）。 本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

公开(公告)号：US20050032378A1

公开(公告)日：2005-02-10

申请号：US10941254

申请日：2004-09-14

Applicant: Wenbing Yu ,  John Spence ,  Howard Padmore ,  Alastair MacDowell ,  Malcolm Howells

Inventor： Wenbing Yu ,  John Spence ,  Howard Padmore ,  Alastair MacDowell ,  Malcolm Howells

IPC: B81C1/00 ,  H01L21/8242 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。